MBE stands for Molecular Beam Epitaxy, which is a process for growing certain crystals. Essentially, source material, such as Gallium, Indium, and Arsenic, are evaporated onto a heated crystal substrate inside an ultra high vacuum chamber (pressure less than 1E-11 torr). The vapors from the heated sources form beams which travel through the chamber and land on the substrate surface, arranging themselves in a crystalline lattice based on that of the substrate. A rough sketch of the layout is displayed below
|Name||Molecular Beam Epitaxy(MBE)|
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