Molecular Beam Epitaxy(MBE)

    Facility/equipment: EquipmentCenter for Micro/Nano Science and Technology

    • Location

      No.1, University Road, Tainan City 701, Taiwan (R.O.C.) 701

      Taiwan

    Description

    MBE stands for Molecular Beam Epitaxy, which is a process for growing certain crystals. Essentially, source material, such as Gallium, Indium, and Arsenic, are evaporated onto a heated crystal substrate inside an ultra high vacuum chamber (pressure less than 1E-11 torr). The vapors from the heated sources form beams which travel through the chamber and land on the substrate surface, arranging themselves in a crystalline lattice based on that of the substrate. A rough sketch of the layout is displayed below

    Details

    NameMolecular Beam Epitaxy(MBE)
    Acquisition date05-05-26

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    molecular beam epitaxy
    vacuum chambers
    arsenic
    layouts
    travel
    ultrahigh vacuum
    crystals
    gallium
    indium
    chambers
    vapors