Reactive Ion Etching

    Facility/equipment: EquipmentCenter for Micro/Nano Science and Technology

    • Location

      No.1, University Road, Tainan City 701, Taiwan (R.O.C.) 701

      Taiwan

    Description

    The etching process is usually employed to remove some material from wafer surface in the semiconductor manufacture. To obtain the needed pattern, the etching process is performed by using corrosive material. Generally, the etching methods are divided into wet and dry etching. However, the dry etching, also called plasma etching, is the most used to anisotropy etching.

    Details

    NameReactive Ion Etching
    Acquisition date13-12-30

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    etching
    ions
    plasma etching
    wafers
    anisotropy