Advanced Optoelectronic Technology Center

Organization profile

Organisation profile

Advanced Optoelectronic Technology Center (AOTC) is one of the research centers of National Cheng-Kung University. AOTC was funded since 2006 and proposed to integrate the research resource of southern Taiwan and improve the technology level of Taiwan’s optoelectronic industry so as to achieve academic excellence and the research power of Taiwan’s advanced optoelectronic industry. The major works of AOTC are listed below: ˙Integrate the NCKU and institutes at southern Taiwan to leading the advanced research of optoelectronic technology ˙Actively push the research result into actual application and technology-transfer. ˙Combining the human resource and facilities of near-by universities to form a virtual institute of versatile advanced optoelectronic technology. ˙Training human resource for optoelectronic technology ˙Performing other works related to optoelectronic technology. The research fields: ˙solid-state lightening, high power LEDs, organic LEDs, key components of optical communication, photonic crystal and quantum dot devices. The facilities: ˙ There are four MOCVDs, HVPE, MBE, ALD and related semiconductor material characterization equipements, delicate semiconductor device manufacture and measurement facilities in AOTC.

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    Research Output

    Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

    Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.

    Research output: Contribution to journalArticle

    Open Access
  • An RRAM with a 2D material embedded double switching layer for neuromorphic computing

    Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W. C., Akinwande, D. & Chiang, M. H., 2019 Jan 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

    Huang, Y. P., Hsu, W. C., Liu, H. Y. & Lee, C. S., 2019 Jun, In : IEEE Electron Device Letters. 40, 6, p. 929-932 4 p., 8693634.

    Research output: Contribution to journalArticle

  • 2 Citations (Scopus)