Advanced Optoelectronic Technology Center

Organization profile

Organisation profile

Advanced Optoelectronic Technology Center (AOTC) is one of the research centers of National Cheng-Kung University. AOTC was funded since 2006 and proposed to integrate the research resource of southern Taiwan and improve the technology level of Taiwan’s optoelectronic industry so as to achieve academic excellence and the research power of Taiwan’s advanced optoelectronic industry. The major works of AOTC are listed below: ˙Integrate the NCKU and institutes at southern Taiwan to leading the advanced research of optoelectronic technology ˙Actively push the research result into actual application and technology-transfer. ˙Combining the human resource and facilities of near-by universities to form a virtual institute of versatile advanced optoelectronic technology. ˙Training human resource for optoelectronic technology ˙Performing other works related to optoelectronic technology. The research fields: ˙solid-state lightening, high power LEDs, organic LEDs, key components of optical communication, photonic crystal and quantum dot devices. The facilities: ˙ There are four MOCVDs, HVPE, MBE, ALD and related semiconductor material characterization equipements, delicate semiconductor device manufacture and measurement facilities in AOTC.

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High electron mobility transistors Engineering & Materials Science
Spray pyrolysis Engineering & Materials Science
Metals Chemical Compounds
Ultrasonics Engineering & Materials Science
Electric breakdown Engineering & Materials Science
Passivation Engineering & Materials Science
Gate dielectrics Engineering & Materials Science
high electron mobility transistors Physics & Astronomy

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Research Output 1981 2019

An RRAM with a 2D material embedded double switching layer for neuromorphic computing

Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W-C., Akinwande, D. & Chiang, M-H., 2019 Jan 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

random access memory
oxygen ions
plastic properties

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Huang, Y. P., Hsu, W-C., Liu, H. Y. & Lee, C. S., 2019 Jun 1, In : IEEE Electron Device Letters. 40, 6, p. 929-932 4 p., 8693634.

Research output: Contribution to journalArticle

Spray pyrolysis
Gate dielectrics
Drain current
Electric breakdown
Threshold voltage

Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2019 Jan 1, In : IEEE Journal of the Electron Devices Society. 7, p. 430-434 5 p., 8671702.

Research output: Contribution to journalArticle

High electron mobility transistors
Electric breakdown