Advanced Optoelectronic Technology Center

Organization profile

Organisation profile

Advanced Optoelectronic Technology Center (AOTC) is one of the research centers of National Cheng-Kung University. AOTC was funded since 2006 and proposed to integrate the research resource of southern Taiwan and improve the technology level of Taiwan’s optoelectronic industry so as to achieve academic excellence and the research power of Taiwan’s advanced optoelectronic industry. The major works of AOTC are listed below: ˙Integrate the NCKU and institutes at southern Taiwan to leading the advanced research of optoelectronic technology ˙Actively push the research result into actual application and technology-transfer. ˙Combining the human resource and facilities of near-by universities to form a virtual institute of versatile advanced optoelectronic technology. ˙Training human resource for optoelectronic technology ˙Performing other works related to optoelectronic technology. The research fields: ˙solid-state lightening, high power LEDs, organic LEDs, key components of optical communication, photonic crystal and quantum dot devices. The facilities: ˙ There are four MOCVDs, HVPE, MBE, ALD and related semiconductor material characterization equipements, delicate semiconductor device manufacture and measurement facilities in AOTC.

Fingerprint The fingerprint is based on mining the text of the scientific documents related to the associated persons. Based on that an index of weighted terms is created, which defines the key subjects of research unit

High electron mobility transistors Engineering & Materials Science
Spray pyrolysis Engineering & Materials Science
Ultrasonics Engineering & Materials Science
Metals Chemical Compounds
Electric breakdown Engineering & Materials Science
Passivation Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
Gate dielectrics Engineering & Materials Science

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Research Output 1981 2018

Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2018 Jan 1, (Accepted/In press) In : IEEE Journal of the Electron Devices Society.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
1 Citations
Semiconductors
High electron mobility transistors
Oxides
Metals
Substrates

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2018 Jan 1, In : IEEE Journal of the Electron Devices Society. 6, p. 1142-1146 5 p., 8470934.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals