Research Output 1982 2019


Improved linearity in AlGaN/GaN HEMTs for millimeter-wave applications by using dual-gate fabrication

Wang, H. C., Su, H. F., Luc, Q. H., Lee, C. T., Hsu, H. T. & Chang, E. Y., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 11, p. S3106-S3109

Research output: Contribution to journalEditorial

High electron mobility transistors
Millimeter waves
Gates (transistor)
Intermodulation distortion
1 Citation (Scopus)

New Energy Materials and Device Application

Chang, S. P., Zhu, J., Huang, S. J., Yu, H. C., Hsueh, T. J. & Lee, H. Y., 2015 Jan 1, In : International Journal of Photoenergy. 2015, 657152.

Research output: Contribution to journalEditorial