Research Output

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Letter
2019

Achromatic metalens array for full-colour light-field imaging

Lin, R. J., Su, V. C., Wang, S., Chen, M. K., Chung, T. L., Chen, Y. H., Kuo, H. Y., Chen, J. W., Chen, J., Huang, Y. T., Wang, J. H., Chu, C. H., Wu, P. C., Li, T., Wang, Z., Zhu, S. & Tsai, D. P., 2019 Mar 1, In : Nature Nanotechnology. 14, 3, p. 227-231 5 p.

Research output: Contribution to journalLetter

26 Citations (Scopus)
2003

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Chang, S. J., Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, C. S., Kao, C. J., Chi, G. C. & Tsai, J. M., 2003 Apr 1, In : IEEE Electron Device Letters. 24, 4, p. 212-214 3 p.

Research output: Contribution to journalLetter

87 Citations (Scopus)

Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Chang, S. J., Chen, C. H., Su, Y. K., Sheu, J. K., Lai, W. C., Tsai, J. M., Liu, C. H. & Chen, S. C., 2003 Mar 1, In : IEEE Electron Device Letters. 24, 3, p. 129-131 3 p.

Research output: Contribution to journalLetter

57 Citations (Scopus)

Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Tu, R. C., Tun, C. J., Sheu, J. K., Kuo, W. H., Wang, T. C., Tsai, C. E., Hsu, J. T., Chi, J. & Chi, G. C., 2003 Apr 1, In : IEEE Electron Device Letters. 24, 4, p. 206-208 3 p.

Research output: Contribution to journalLetter

17 Citations (Scopus)

Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

Lee, C. T. & Lee, H. Y., 2003 Sep 1, In : IEEE Electron Device Letters. 24, 9, p. 532-534 3 p.

Research output: Contribution to journalLetter

3 Citations (Scopus)
2002

InGaN/GaN light emitting diodes activated in O2 ambient

Kuo, C. H., Chang, S. J., Su, Y. K., Chen, J. F., Wu, L. W., Sheu, J. K., Chen, C. H. & Chi, G. C., 2002 May 1, In : IEEE Electron Device Letters. 23, 5, p. 240-242 3 p.

Research output: Contribution to journalLetter

54 Citations (Scopus)