Research Output 1982 2019

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Letter
2019
16 Citations (Scopus)

Achromatic metalens array for full-colour light-field imaging

Lin, R. J., Su, V. C., Wang, S., Chen, M. K., Chung, T. L., Chen, Y. H., Kuo, H. Y., Chen, J. W., Chen, J., Huang, Y. T., Wang, J. H., Chu, C. H., Wu, P-C., Li, T., Wang, Z., Zhu, S. & Tsai, D. P., 2019 Mar 1, In : Nature Nanotechnology. 14, 3, p. 227-231 5 p.

Research output: Contribution to journalLetter

Color
color
Imaging techniques
Cameras
cameras
2017
125 Citations (Scopus)

Versatile Polarization Generation with an Aluminum Plasmonic Metasurface

Wu, P-C., Tsai, W. Y., Chen, W. T., Huang, Y. W., Chen, T. Y., Chen, J. W., Liao, C. Y., Chu, C. H., Sun, G. & Tsai, D. P., 2017 Jan 11, In : Nano letters. 17, 1, p. 445-452 8 p.

Research output: Contribution to journalLetter

Aluminum
Polarization
aluminum
polarization
Light polarization
2003
87 Citations (Scopus)

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Chang, S-J., Lee, M. L., Sheu, J-K., Lai, W-C., Su, Y. K., Chang, C. S., Kao, C. J., Chi, G. C. & Tsai, J. M., 2003 Apr 1, In : IEEE Electron Device Letters. 24, 4, p. 212-214 3 p.

Research output: Contribution to journalLetter

Gallium nitride
Photodetectors
Metals
Semiconductor materials
Temperature
57 Citations (Scopus)

Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Chang, S-J., Chen, C. H., Su, Y. K., Sheu, J-K., Lai, W-C., Tsai, J. M., Liu, C. H. & Chen, S. C., 2003 Mar 1, In : IEEE Electron Device Letters. 24, 3, p. 129-131 3 p.

Research output: Contribution to journalLetter

Light emitting diodes
Etching
Diodes
Optical losses
Electrostatic discharge
17 Citations (Scopus)

Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Tu, R. C., Tun, C. J., Sheu, J-K., Kuo, W. H., Wang, T. C., Tsai, C. E., Hsu, J. T., Chi, J. & Chi, G. C., 2003 Apr 1, In : IEEE Electron Device Letters. 24, 4, p. 206-208 3 p.

Research output: Contribution to journalLetter

Ohmic contacts
Semiconductor lasers
Quantum well lasers
Metallorganic vapor phase epitaxy
Tunnel junctions
3 Citations (Scopus)

Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

Lee, C. T. & Lee, H. Y., 2003 Sep 1, In : IEEE Electron Device Letters. 24, 9, p. 532-534 3 p.

Research output: Contribution to journalLetter

Buffer layers
Photodetectors
Metals
Semiconductor materials
Plasma confinement
2002
54 Citations (Scopus)

InGaN/GaN light emitting diodes activated in O2 ambient

Kuo, C. H., Chang, S-J., Su, Y. K., Chen, J-F., Wu, L. W., Sheu, J-K., Chen, C. H. & Chi, G. C., 2002 May 1, In : IEEE Electron Device Letters. 23, 5, p. 240-242 3 p.

Research output: Contribution to journalLetter

Light emitting diodes
Annealing
Epitaxial layers
Chemical activation
Temperature