Projects per year
Organization profile
Organisation profile
The Institute of Microelectronics Engineering was established and supported with the approval of the Educational Adminstration in 2000, because of its outstanding research achievement and educational thrusts in modern microelectronics areas. We strongly support broad-based interdisciplinary research and collaborate with the companies in the Tainan Science-based Park on state-of-the-art subjects. With the designed diversified curriculum, we expect that our graduates will have the proficiency in mathematics, science, and engineering neccessary to develop solution of problems encountered in future practice. We are pleased that you are interested in the Institute of Microelectronics, and truly encourage and welcome you to join us in exploring the fascinating research areas.
With our abundant research fruits and excellent faculties, we have been agreed by the Educational Adminstration to set the Institute of Microelectronics Engineering and admitted students from 2000. Besides continuing the high quality research fruits, we will cooperate with the companies in the Tainan Science-based Park on related subjects. Through this curriculum design, we hope that our student can do well on both practical and theoretical sides. And we wholeheartedly welcome you who are interested in our field to apply.
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Profiles
Projects
三族氮化物微米級及奈米級三維光電元件磊晶及製程之研究-總計畫暨子計畫一：三族氮化物奈米柱光電元件之製程開發及特性研究
19-08-01 → 20-07-31
Project: Research project
Research Output
1030-nm passively Q-switched ytterbium-doped fiber laser using excited-state absorption of thulium fiber
Tsai, T. Y. & Lee, Z. C., 2020 Jan 1, In : Optics Letters. 45, 1, p. 17-20 4 p.Research output: Contribution to journal › Article
1
Citation
(Scopus)
A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated with Evaporated Platinum (Pt) Nanoparticles
Chang, C. H., Chou, T. C., Chen, W. C., Niu, J. S., Lin, K. W., Cheng, S. Y. & Liu, W. C., 2020 Mar, In : IEEE Transactions on Electron Devices. 67, 3, p. 1176-1182 7 p., 8995803.Research output: Contribution to journal › Article
Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel
Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.Research output: Contribution to journal › Article
Open Access
Student theses
3D Structured Devices Developed by Through Silicon Via Technology
Author: 俊良, 盧., 2019Supervisor: Chang, S. (Supervisor)
Student thesis: Doctoral Thesis
Analysis on Hot Carrier Reliability for High Voltage MOS Device with Different Processes
Author: 俊諺, 陳., 2017 Jul 3Supervisor: Chen, J. (Supervisor)
Student thesis: Master's Thesis
Analysis on Reliability for FinFET with Different Processes
Author: 佑軒, 李., 2018 Jul 5Supervisor: Chen, J. (Supervisor)
Student thesis: Master's Thesis