Organization profile

Organisation profile

The Institute of Microelectronics Engineering was established and supported with the approval of the Educational Adminstration in 2000, because of its outstanding research achievement and educational thrusts in modern microelectronics areas. We strongly support broad-based interdisciplinary research and collaborate with the companies in the Tainan Science-based Park on state-of-the-art subjects. With the designed diversified curriculum, we expect that our graduates will have the proficiency in mathematics, science, and engineering neccessary to develop solution of problems encountered in future practice. We are pleased that you are interested in the Institute of Microelectronics, and truly encourage and welcome you to join us in exploring the fascinating research areas. With our abundant research fruits and excellent faculties, we have been agreed by the Educational Adminstration to set the Institute of Microelectronics Engineering and admitted students from 2000. Besides continuing the high quality research fruits, we will cooperate with the companies in the Tainan Science-based Park on related subjects. Through this curriculum design, we hope that our student can do well on both practical and theoretical sides. And we wholeheartedly welcome you who are interested in our field to apply.

Fingerprint Dive into the research topics where Institute of Microelectronics is active. These topic labels come from the works of this organisation's members. Together they form a unique fingerprint.

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    Research Output

    1030-nm passively Q-switched ytterbium-doped fiber laser using excited-state absorption of thulium fiber

    Tsai, T. Y. & Lee, Z. C., 2020 Jan 1, In : Optics Letters. 45, 1, p. 17-20 4 p.

    Research output: Contribution to journalArticle

  • 1 Citation (Scopus)

    A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated with Evaporated Platinum (Pt) Nanoparticles

    Chang, C. H., Chou, T. C., Chen, W. C., Niu, J. S., Lin, K. W., Cheng, S. Y. & Liu, W. C., 2020 Mar, In : IEEE Transactions on Electron Devices. 67, 3, p. 1176-1182 7 p., 8995803.

    Research output: Contribution to journalArticle

  • Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

    Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.

    Research output: Contribution to journalArticle

    Open Access
  • Student theses

    3D Structured Devices Developed by Through Silicon Via Technology

    Author: 俊良, 盧., 2019

    Supervisor: Chang, S. (Supervisor)

    Student thesis: Doctoral Thesis

    Analysis on Hot Carrier Reliability for High Voltage MOS Device with Different Processes

    Author: 俊諺, 陳., 2017 Jul 3

    Supervisor: Chen, J. (Supervisor)

    Student thesis: Master's Thesis

    Analysis on Reliability for FinFET with Different Processes

    Author: 佑軒, 李., 2018 Jul 5

    Supervisor: Chen, J. (Supervisor)

    Student thesis: Master's Thesis