Projects per year
Organisation profile
Organisation profile
The Institute of Microelectronics Engineering was established and supported with the approval of the Educational Adminstration in 2000, because of its outstanding research achievement and educational thrusts in modern microelectronics areas. We strongly support broad-based interdisciplinary research and collaborate with the companies in the Tainan Science-based Park on state-of-the-art subjects. With the designed diversified curriculum, we expect that our graduates will have the proficiency in mathematics, science, and engineering neccessary to develop solution of problems encountered in future practice. We are pleased that you are interested in the Institute of Microelectronics, and truly encourage and welcome you to join us in exploring the fascinating research areas.
With our abundant research fruits and excellent faculties, we have been agreed by the Educational Adminstration to set the Institute of Microelectronics Engineering and admitted students from 2000. Besides continuing the high quality research fruits, we will cooperate with the companies in the Tainan Science-based Park on related subjects. Through this curriculum design, we hope that our student can do well on both practical and theoretical sides. And we wholeheartedly welcome you who are interested in our field to apply.
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Profiles
Projects
- 81 Finished
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次世代氧化鎵新穎材料磊晶及元件製程之研究-氧化鎵新穎材料磊晶製程開發與特性研究(總計畫及子計畫一)
Chang, S.-J. (PI)
21-08-01 → 22-07-31
Project: Research project
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A Compact Gray-Code Quantum Read-only Memory for the NISQ Era
Lu, H. Y., Kao, Y. T., Chang, Y. J., Wang, C.-H. & Lu, D., 2026, Proceedings of the 27th International Symposium on Quality Electronic Design, ISQED 2026. IEEE Computer Society, (Proceedings - International Symposium on Quality Electronic Design, ISQED).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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A high-performance room-temperature hydrogen sensor based on Pd nanoparticle-decorated β-Ga2O3 prepared by mist-CVD
Cheng, C. S., Hung, H. C., Hsu, W. C. & Liu, W. C., 2026 May 25, In: Applied Physics Letters. 128, 21, 213506.Research output: Contribution to journal › Article › peer-review
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Characteristics of Gallium Nitride-Based Dual-Gate Metal-Oxide-Semiconductor High-Electron-Mobility Transistors with Gate Oxide Layers Directly Grown by Photoelectrochemical Oxidation Method
Hung, Z. S., Lee, H.-Y., Chuang, R. W. & Lee, C. T., 2026 Jun, In: Micromachines. 17, 6, 645.Research output: Contribution to journal › Article › peer-review
Open Access
Student theses
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3D Structured Devices Developed by Through Silicon Via Technology
俊良盧 (Author), Chang, S.-J. (Supervisor), 2019Student thesis: Doctoral Thesis
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Analysis on Hot Carrier Reliability for High Voltage MOS Device with Different Processes
俊諺, 陳 (Author), Chen, J.-F. (Supervisor), 2017 Jul 3Student thesis: Master's Thesis
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Analysis on Reliability for FinFET with Different Processes
佑軒, 李 (Author), Chen, J.-F. (Supervisor), 2018 Jul 5Student thesis: Master's Thesis