Organisation profile
Organisation profile
The Institute of Microelectronics Engineering was established and supported with the approval of the Educational Adminstration in 2000, because of its outstanding research achievement and educational thrusts in modern microelectronics areas. We strongly support broad-based interdisciplinary research and collaborate with the companies in the Tainan Science-based Park on state-of-the-art subjects. With the designed diversified curriculum, we expect that our graduates will have the proficiency in mathematics, science, and engineering neccessary to develop solution of problems encountered in future practice. We are pleased that you are interested in the Institute of Microelectronics, and truly encourage and welcome you to join us in exploring the fascinating research areas.
With our abundant research fruits and excellent faculties, we have been agreed by the Educational Adminstration to set the Institute of Microelectronics Engineering and admitted students from 2000. Besides continuing the high quality research fruits, we will cooperate with the companies in the Tainan Science-based Park on related subjects. Through this curriculum design, we hope that our student can do well on both practical and theoretical sides. And we wholeheartedly welcome you who are interested in our field to apply.
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Dive into the research topics where Institute of Microelectronics is active. These topic labels come from the works of this organisation's members. Together they form a unique fingerprint.
Collaborations and top research areas from the last five years
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Profiles
Projects
- 81 Finished
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以前瞻非揮發性記憶體為中心適用於大規模平行化之容錯且可重組的異質運算平台-非揮發記憶元件之計算記憶體電路模型
Lu, D. (PI)
21-08-01 → 22-07-31
Project: Research project
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Resistive switching characteristics of Gd2Hf2(1-x)Zn2xO7 (x = 0–0.09) thin films prepared by RF sputtering
Lin, C. W., Chuang, R. W., Shih, C. F. & Huang, C.-L., 2026 Mar 1, In: Materials Science in Semiconductor Processing. 203, 110255.Research output: Contribution to journal › Article › peer-review
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A Ballistic Transport Model for Nanosheet CFETs with Si(100), (110), and (111) Channel Orientations
Yang, Y. C., Tsai, H. M., Chiang, T. K. & Wang, Y. H., 2025, 2025 Silicon Nanoelectronics Workshop, SNW 2025. Institute of Electrical and Electronics Engineers Inc., p. 72-73 2 p. (2025 Silicon Nanoelectronics Workshop, SNW 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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A chemoresistive hydrogen gas sensor prepared by a sputtered indium tungsten oxide thin film and palladium nanoparticles
Jian, J. J., Chu, P. Y., Wang, J. C., Kuo, C. K., Lin, K. W. & Liu, W. C., 2025 Jan 20, In: International Journal of Hydrogen Energy. 99, p. 146-154 9 p.Research output: Contribution to journal › Article › peer-review
8 Link opens in a new tab Citations (Scopus)
Student theses
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3D Structured Devices Developed by Through Silicon Via Technology
俊良盧 (Author), Chang, S.-J. (Supervisor), 2019Student thesis: Doctoral Thesis
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Analysis on Hot Carrier Reliability for High Voltage MOS Device with Different Processes
俊諺, 陳 (Author), Chen, J.-F. (Supervisor), 2017 Jul 3Student thesis: Master's Thesis
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Analysis on Reliability for FinFET with Different Processes
佑軒, 李 (Author), Chen, J.-F. (Supervisor), 2018 Jul 5Student thesis: Master's Thesis