Material Science
Gallium Arsenide
90%
Transistor
89%
Light-Emitting Diode
81%
Heterojunction
70%
Photosensor
59%
ZnO
59%
Film
57%
Oxide Compound
57%
Electron Mobility
55%
Field Effect Transistor
53%
Surface (Surface Science)
53%
Thin Films
48%
Density
46%
Nanowire
42%
Dielectric Material
42%
Indium Gallium Arsenide
39%
Metal Oxide
37%
Oxide Semiconductor
36%
Silicon
29%
Thin-Film Transistor
29%
Zinc Oxide
29%
Nanoparticle
28%
Bipolar Transistor
28%
Annealing
26%
Indium
25%
Nitride Compound
25%
Chemical Vapor Deposition
24%
Superlattice
23%
Molecular Beam Epitaxy
22%
Quantum Well
21%
Electronic Circuit
21%
Schottky Barrier
21%
Aluminum Oxide
20%
Indium Tin Oxide
20%
Schottky Diode
19%
Nanorod
17%
Gas Sensor
17%
Photoluminescence
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Sapphire
16%
Gallium
15%
Aluminium Gallium Arsenide
14%
Aluminum Nitride
11%
Buffer Layer
11%
Resistive Random-Access Memory
11%
Optical Property
11%
Graphene
10%
Titanium Dioxide
10%
Capacitance
9%
Epitaxial Film
9%
Solar Cell
9%
Oxide Film
9%
Current Voltage Characteristics
9%
Metal-Organic Chemical Vapor Deposition
9%
Aluminum
9%
Scanning Electron Microscopy
8%
Nanostructure
8%
Thermal Stability
8%
Composite Material
8%
Hot Carrier
8%
Tungsten
8%
Photonic Crystal
8%
Liquid Phase Deposition
8%
Resonator
7%
Diamond
7%
Current-Voltage Characteristic
7%
X-Ray Diffraction
7%
Spray Pyrolysis
7%
Electrical Resistivity
7%
Carrier Concentration
7%
Waveguide
7%
Silicon Dioxide
7%
Nanosheet
6%
Platinum
6%
Contact Resistance
6%
Carbon Nanotube
6%
Gold Nanoparticles
6%
Oxygen Vacancy
6%
X-Ray Photoelectron Spectroscopy
6%
Sol-Gel
6%
Hydrogen Peroxide
6%
Doping (Additives)
6%
Permittivity
6%
Surface Roughness
6%
Anode
5%
Nucleation
5%
Ferroelectric Material
5%
Palladium
5%
Quantum Dot
5%
Surface Active Agent
5%
GaAs/AlGaAs
5%
Surface Passivation
5%
Surface Morphology
5%
Epilayers
5%
Wet Etching
5%
Engineering
Gallium Arsenide
100%
Heterojunctions
79%
Light-Emitting Diode
71%
Indium Gallium Arsenide
60%
Field-Effect Transistor
48%
Bipolar Transistor
42%
Photometer
38%
Metal Oxide Semiconductor
31%
Thin Films
31%
Breakdown Voltage
30%
Metal-Oxide-Semiconductor Field-Effect Transistor
29%
Quantum Well
28%
Negative Differential Resistance
27%
Low-Temperature
25%
Nitride
24%
Superlattice
24%
Vapor Deposition
24%
Chemical Vapor Deposition
23%
Room Temperature
23%
Aluminium Gallium Arsenide
23%
Current Gain
22%
Silicon Dioxide
21%
Experimental Result
21%
Nanowire
21%
Photodetector
19%
Liquid Phase
19%
Tunnel Construction
18%
Passivation
17%
Schottky Barrier
16%
Gate Voltage
16%
Current Drain
15%
Output Power
15%
Gate Dielectric
15%
Field Effect Transistor
14%
Responsivity
13%
Gas Sensor
13%
Cap Layer
12%
Thin-Film Transistor
12%
Dielectrics
12%
Nanoparticle
12%
Device Performance
12%
Sensing Performance
12%
Barrier Height
12%
Indium-Tin-Oxide
11%
Monolithic Microwave Integrated Circuits
11%
Current Ratio
11%
Doped Gaas
11%
Resonant Tunneling
11%
Sapphire Substrate
11%
Mixers (Machinery)
10%
Two Dimensional
10%
Max
10%
Current Injection
10%
Offset Voltage
10%
Current-Voltage Characteristic
9%
Band Gap
9%
Radio Frequency
9%
Emitting Laser
9%
Sensing Property
9%
Light Output Power
8%
Resonator
8%
Gate Length
8%
Resistive
8%
Metal Organic Chemical Vapor Deposition
8%
Bandpass Filter
8%
Cavity Surface
7%
Gate Oxide
7%
Carrier Concentration
7%
Photocurrent
7%
Frequency Noise
7%
Ultrasonics
7%
Cutoff Frequency
7%
Channel Structure
7%
Barrier Layer
7%
Gaas Heterostructures
7%
Resistive Random Access Memory
6%
Ohmic Contacts
6%
Photodiode
6%
Metal Gate
6%
Response Time
6%
Oxide Layer
6%
Power Amplifier
6%
Buffer Layer
6%
Epitaxial Film
6%
Field Emission
6%
Hydrogen Gas
6%
Electrostatic Discharge
6%
Side Wall
6%
Oxide Thickness
6%
Saturation Current Density
6%
Superlattice Structure
6%
Annealing Temperature
6%
Pyrolysis
5%
Recovery Time
5%
Current Collector
5%
Forward Voltage
5%
Sio2 Layer
5%
Inverter
5%
Solar Cell
5%
Series Resistance
5%
Keyphrases
Gallium Arsenide
48%
Light-emitting Diodes
32%
InGaAs
26%
Indium Gallium Nitride (InGaN)
20%
GaN-based Light-emitting Diodes
20%
InGaP
17%
Negative Differential Resistance
16%
Nitrides
16%
Photodetector
15%
Transistor
14%
Heterostructure Field-effect Transistors
14%
InP HEMT
13%
Low Temperature
12%
Metal-organic Chemical Vapor Deposition (MOCVD)
12%
UV Photodetector
12%
Heterojunction Bipolar Transistors
12%
High Performance
11%
Bipolar Transistor
10%
AlGaN-GaN
10%
Metal Oxide Semiconductor
10%
Metal-semiconductor-metal Photodetector
10%
Room Temperature
10%
Metal-semiconductor-metal
9%
Breakdown Voltage
9%
ZnO Nanowires
9%
Superlattice
9%
Silica
9%
Heterostructure
9%
Multiple Quantum Wells
9%
Dark Current
9%
GaN-based
9%
Molecular Beam Epitaxy
8%
Delta Doping
8%
Indium Tin Oxide
8%
Field-effect Transistors
7%
Annealing
7%
Liquid Phase
7%
Pseudomorphic
7%
Responsivity
7%
H2-air
7%
AlGaAs
7%
High Electron Mobility Transistor
7%
Gate Dielectric
6%
P-GaN
6%
Aluminum Gallium Nitride (AlGaN)
6%
Thin-film Transistors
6%
Transconductance
6%
Hydrogen Sensing
6%
Hydrogen Sensor
6%
Temperature Effect
6%
Metamorphic High Electron Mobility Transistor (mHEMT)
6%
Light Output
6%
Power Output
6%
Applied Bias
5%
Capping Layer
5%
Amorphous InGaZnO (a-IGZO)
5%
High Breakdown Voltage
5%
MOSFET
5%
Zinc Oxide Thin Films
5%
Schottky Barrier Photodetectors
5%
Glass Substrate
5%
Temperature-dependent Characteristics
5%
Resistance Trends
5%
Schottky Diode
5%
AlGaAs-InGaAs
5%
Current Gain
5%
Gasses
5%
Electrical Properties
5%
Passivated
5%
Low-frequency Noise
5%
Low Pressure
5%
Oxide Thin-film Transistors
5%
High Power
5%
Gate Voltage Swing
5%