Institute of Microelectronics

Research output

Research output per year 1981 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2024

• 2476 Article
• 543 Conference contribution
• 87 Conference article
• 54 Paper
• 69 More
  • 18 Patent
  • 14 Editorial
  • 13 Letter
  • 12 Comment/debate
  • 6 Chapter
  • 5 Review article
  • 1 Book

Research output per year

Research output per year

Search results

• 2012

  ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE

  Wang, S-J., 2012 Aug 23, Patent No. 8551869

  Research output: Patent

  • inventions 100%
  • epitaxy 76%
  • manufacturing 64%
  • light emitting diodes 61%
  • excimer lasers 25%
• 1800

  DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

  Wang, S-J., 1800, Patent No. I358839

  Research output: Patent

• Light-emitting Diode Having Surface-Textured Structure And Method For Manufacturing The Same

  Wang, S-J., 1800, Patent No. I469388

  Research output: Patent

• Method for manufacturing nanowires with micro- structure

  Wang, S-J., 1800, Patent No. I448418

  Research output: Patent

• Method of manufacturing nanowires and the field emission device using the same

  Wang, S-J., 1800, Patent No. I431662

  Research output: Patent

• Mold and Method for Epitaxial Growth

  Wang, S-J., 1800, Patent No. I602220

  Research output: Patent

• Roughening method and method for manufacturing light emitting diode having roughened surface

  Wang, S-J., 1800, Patent No. I422068

  Research output: Patent

• 以氧化鋅奈米線為基材之異質接面奈米線結構之製造方法

  Wang, S-J., 1800, Patent No. I380474

  Research output: Patent

• 具有附著反射層的垂直式發光二極體及其製造方法

  Wang, S-J., 1800, Patent No. I293813

  Research output: Patent

• 垂直式發光二極體之製造方法

  Wang, S-J., 1800, Patent No. I395353

  Research output: Patent

• 應用於場效發射電特性之量測裝置

  Wang, S-J., 1800, Patent No. I301200

  Research output: Patent

• 改善電流與發光分佈的發光二極體及其製造方法

  Wang, S-J., 1800, Patent No. I294700

  Research output: Patent

• 氧化鎢奈米線之製造方法

  Wang, S-J., 1800, Patent No. I257380

  Research output: Patent

• 用於製造氮化鎵基半導體垂直結構元件的雷射剝離方法

  Wang, S-J., 1800, Patent No. I287309

  Research output: Patent

• 異質接面奈米線結構及其製造方法

  Wang, S-J., 1800, Patent No. I385118

  Research output: Patent

• 發光二極體接面溫度及熱阻之量測系統與方法

  Wang, S-J., 1800, Patent No. I315399

  Research output: Patent

• 自行合成式碳化鎢奈米線之製備方法

  Wang, S-J., 1800, Patent No. I253386

  Research output: Patent

• 非串接式堆疊結構之太陽能電池及其製造方法

  Wang, S-J., 1800, Patent No. I380459

  Research output: Patent