Master Degree Program on Nano-Integrated-Circuit Engineering

Organization profile

Organisation profile

The fields of research in the Nano-Integrated Circuit Engineering Program of National Cheng Kung University are focused on 1) nanoelectronic device design and technology and 2) sensors. As semiconductor devices continue to shrink, mainly for cost reduction in industry, many issues have continuously surfaced. Besides manufacturing challenges, ever increasing transistor density and computation have raised the concern on power consumption. To expedite further nanoelectronic development, especially for growing mobile market, low power electronics are on demand, which requires novel devices to fulfill the low power strategy while the performance is not compromised. This Nano-IC Program has developed several novel green electronic devices. Another field of sensors has just been started. We have worked on novel materials including promising 2D materials for photo detectors. Other experiments of nanoelectronic devices for general sensor applications are under progress.

Fingerprint The fingerprint is based on mining the text of the scientific documents related to the associated persons. Based on that an index of weighted terms is created, which defines the key subjects of research unit

High electron mobility transistors Engineering & Materials Science
Light emitting diodes Engineering & Materials Science
Metals Chemical Compounds
Photodetectors Engineering & Materials Science
light emitting diodes Physics & Astronomy
Substrates Engineering & Materials Science
Temperature Engineering & Materials Science
Electric potential Engineering & Materials Science

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Projects 1995 2018

Research Output 1980 2019

Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors

Lee, H-Y., Lin, C. W. & Lee, C-T., 2019 Jan 30, In : Journal of Alloys and Compounds. 773, p. 210-216 7 p.

Research output: Contribution to journalArticle

Nanospheres
Photodetectors
Aluminum
Metals
Semiconductor materials

Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Anandan, D., Kakkerla, R. K., Yu, H. W., Ko, H. L., Nagarajan, V., Singh, S. K., Lee, C-T. & Chang, E. Y., 2019 Jan 15, In : Journal of Crystal Growth. 506, p. 45-54 10 p.

Research output: Contribution to journalArticle

Indium antimonides
Antimony compounds
Silicon Compounds
Gold Compounds
Organic Chemicals
Zinc Oxide
Graphite
Nitrogen oxides
Zinc oxide
Oxides