Master Degree Program on Nano-Integrated-Circuit Engineering

Organization profile

Organisation profile

The fields of research in the Nano-Integrated Circuit Engineering Program of National Cheng Kung University are focused on 1) nanoelectronic device design and technology and 2) sensors. As semiconductor devices continue to shrink, mainly for cost reduction in industry, many issues have continuously surfaced. Besides manufacturing challenges, ever increasing transistor density and computation have raised the concern on power consumption. To expedite further nanoelectronic development, especially for growing mobile market, low power electronics are on demand, which requires novel devices to fulfill the low power strategy while the performance is not compromised. This Nano-IC Program has developed several novel green electronic devices. Another field of sensors has just been started. We have worked on novel materials including promising 2D materials for photo detectors. Other experiments of nanoelectronic devices for general sensor applications are under progress.

Fingerprint Dive into the research topics where Master Degree Program on Nano-Integrated-Circuit Engineering is active. These topic labels come from the works of this organisation's members. Together they form a unique fingerprint.

  • Network Recent external collaboration on country level. Dive into details by clicking on the dots.

    Projects

    Research Output

    1030-nm passively Q-switched ytterbium-doped fiber laser using excited-state absorption of thulium fiber

    Tsai, T. Y. & Lee, Z. C., 2020 Jan 1, In : Optics Letters. 45, 1, p. 17-20 4 p.

    Research output: Contribution to journalArticle

  • 1 Citation (Scopus)

    A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated with Evaporated Platinum (Pt) Nanoparticles

    Chang, C. H., Chou, T. C., Chen, W. C., Niu, J. S., Lin, K. W., Cheng, S. Y. & Liu, W. C., 2020 Mar, In : IEEE Transactions on Electron Devices. 67, 3, p. 1176-1182 7 p., 8995803.

    Research output: Contribution to journalArticle

  • Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

    Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.

    Research output: Contribution to journalArticle

    Open Access
  • Equipment

    Molecular Beam Epitaxy System

    Jung-Chun Huang (Manager) & 家傑 許 (Operator)

    Instrument Development Center

    Facility/equipment: EquipmentInstrument Development Center

  • Pulse Laser Deposition System

    Jung-Chun Huang (Manager) & 浚銘 呂 (Operator)

    Instrument Development Center

    Facility/equipment: EquipmentInstrument Development Center

  • Student theses

    Analysis of the Multi-Vt FD-SOI MOSFETs and SRAM Application

    Author: 政邑, 陳., 2018 Jan 16

    Supervisor: Chiang, M. (Supervisor)

    Student thesis: Master's Thesis

    Characterization and Analysis of Oxide Interface Charge for FinFETs

    Author: 如諒, 賴., 2017 Jun 21

    Supervisor: Chiang, M. (Supervisor)

    Student thesis: Master's Thesis

    Characterization and Modeling of Via Resistance for FinFETs

    Author: 博任, 楊., 2018 Feb 7

    Supervisor: Chiang, M. (Supervisor)

    Student thesis: Master's Thesis