Master Degree Program on Nano-Integrated-Circuit Engineering

Research output

Research output per year 1982 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2024

• 1462 Article
• 329 Conference contribution
• 128 Patent
• 64 Conference article
• 59 More
  • 29 Paper
  • 8 Review article
  • 7 Chapter
  • 6 Letter
  • 5 Editorial
  • 4 Comment/debate

Research output per year

Research output per year

Search results

• 2024

  Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications

  Serbulova, K., Qiu, Z. E., Chen, S. H., Grill, A., Kao, K. H., De Boeck, J. & Groeseneken, G., 2024, 2024 IEEE International Reliability Physics Symposium, IRPS 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
• 2023

  First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure

  Yu, X. R., Hsieh, C. C., Chuang, M. H., Chiu, M. Y., Sun, T. C., Geng, W. Z., Chang, W. H., Shih, Y. J., Lu, W. H., Chang, W. C., Lin, Y. C., Pai, Y. C., Lai, C. Y., Chuang, M. H., Dei, Y., Yang, C. Y., Lu, H. Y., Lin, N. C., Wu, C. T., Kao, K. H., & 9 othersMa, W. C. Y., Lu, D. D., Lee, Y. J., Luo, G. L., Chiang, M. H., Maeda, T., Wu, W. F., Li, Y. M. & Hou, T. H., 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET 95%
  • inverters 92%
  • Cryogenics 82%
  • elimination 73%
  • cryogenics 70%

• How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology

  Chiang, H. L., Hadi, R. A., Wang, J. F., Han, H. C., Wu, J. J., Hsieh, H. H., Horng, J. J., Chou, W. S., Lien, B. S., Chang, C. H., Chen, Y. C., Wang, Y. H., Chen, T. C., Liu, J. C., Liu, Y. C., Chiang, M. H., Kao, K. H., Pulicherla, B., Cai, J., Chang, C. S., & 9 othersSu, K. W., Cheng, K. L., Yeh, T. J., Peng, Y. C., Enz, C., Chang, M. C. F., Chang, M. F., Wong, H. S. P. & Radu, I. P., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2023-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Qubits 100%
  • Refrigerators 56%
  • Dilution 51%
  • Fault tolerant computer systems 36%
  • Quantum computers 32%
  5 Citations (Scopus)

• Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

  Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Guo, J. Q., Wu, C. J., Wu, P. Y. & Hung, J. Y., 2023, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 129-131 3 p. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanosheets 100%
  • Thin film transistors 84%
  • Asymmetry 70%
  • Nanosheet 54%
  • transistors 52%

• Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

  Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Guo, J. Q., Wu, C. J., Wu, P. Y. & Hung, J. Y., 2023, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 126-128 3 p. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanosheets 100%
  • Thin film transistors 84%
  • Nanosheet 54%
  • transistors 52%
  • degradation 49%

• MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization

  Lin, W. C., Huang, H. P., Kao, K. H., Chiang, M. H., Lu, D., Hsu, W. C., Wang, Y. H., Ma, W. C. Y., Tsai, H. H., Lee, Y. J., Chiang, H. L., Wang, J. F. & Radu, I., 2023, ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference. Editions Frontieres, p. 9-12 4 p. (European Solid-State Device Research Conference; vol. 2023-September).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Cryogenics 100%
  • Electric potential 73%
  • Voltage scaling 59%
  • Temperature 56%
  • Electric power utilization 34%

• Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications

  Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Guo, J. Q., Wu, C. J., Wu, P. Y. & Hung, J. Y., 2023, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 154-156 3 p. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Gates (transistor) 100%
  • Ferroelectric materials 92%
  • Thin film transistors 89%
  • tunnels 65%
  • Tunnels 59%
• 2022

  First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

  Yang, C. Y., Sung, P. J., Chuang, M. H., Chang, C. W., Shih, Y. J., Huang, T. Y., Lu, D. D., Hong, T. C., Yu, X. R., Lu, W. H., Chang, S. W., Tsai, J. J., Huang, M. K., Cho, T. C., Lee, Y. J., Luo, K. L., Wu, C. T., Su, C. J., Kao, K. H., Chao, T. S., & 2 othersWu, W. F. & Wang, Y. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2021-2024 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field effect transistors 100%
  • Field Effect 92%
  • Demonstrations 76%
  • field effect transistors 73%
  • logic 36%
  2 Citations (Scopus)

• First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

  Yu, X. R., Chang, W. H., Hong, T. C., Sung, P. J., Agarwal, A., Luo, G. L., Wu, C. T., Kao, K. H., Su, C. J., Chang, S. W., Lu, W. H., Fu, P. Y., Lin, J. H., Wu, P. H., Cho, T. C., Ma, W. C. Y., Lu, D. D., Chao, T. S., Maeda, T., Lee, Y. J., & 3 othersWu, W. F., Yeh, W. K. & Wang, Y. H., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 399-400 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2022-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field effect transistors 100%
  • Demonstrations 76%
  • Nanosheets 70%
  • Raman scattering 67%
  • Electron diffraction 61%
  3 Citations (Scopus)

• Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

  Yu, X. R., Chuang, M. H., Chang, S. W., Chang, W. H., Hong, T. C., Chiang, C. H., Lu, W. H., Yang, C. Y., Chen, W. J., Lin, J. H., Wu, P. H., Sun, T. C., Kola, S., Yang, Y. S., Da, Y., Sung, P. J., Wu, C. T., Cho, T. C., Luo, G. L., Kao, K. H., & 11 othersChiang, M. H., Ma, W. C. Y., Su, C. J., Chao, T. S., Maeda, T., Samukawa, S., Li, Y., Lee, Y. J., Wu, W. F., Tarng, J. H. & Wang, Y. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2051-2054 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Static random access storage 100%
  • inverters 74%
  • cells 48%
  • Reduction 40%
  • footprints 33%
  11 Citations (Scopus)
• 2021

  Back-Bias Modulated UTBB SOI for System-on-Chip I/O Cells

  Chang, M. Y., Chao, P. Y. & Chiang, M. H., 2021 Apr 7, Proceedings of the 22nd International Symposium on Quality Electronic Design, ISQED 2021. IEEE Computer Society, p. 311-316 6 p. 9424294. (Proceedings - International Symposium on Quality Electronic Design, ISQED; vol. 2021-April).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Silicon oxides 100%
  • Threshold voltage 75%
  • System-on-chip 70%

• Current redistribution on hybrid power system combining supercapacitors with lithium-ion batteries for application of the electric drill

  Huang, P. Y., Hou, S. C., Xiao, I. Y., Chung, C. H., Hu, J. S., Hsieh, T. H., Yang, C. H., Tsai, M. C., Teng, H., Liu, C. P. & Chang, C. C., 2021, 2021 IEEE International Future Energy Electronics Conference, IFEEC 2021. Institute of Electrical and Electronics Engineers Inc., (2021 IEEE International Future Energy Electronics Conference, IFEEC 2021).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Electric drills 100%
  • Lithium-ion Battery 97%
  • Redistribution 71%
  • Power System 69%
  • Supercapacitor 62%

• Development of Attachable Transparnet Ultrasonic Transducer: A Versatile Photoacoustic Imaging Device for Body Sensor Network

  Liu, Y. H., Li, C. Y., Chen, L. X., Su, H. Y., Wang, Y. H. & Huang, C. H., 2021 Jun 20, 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. Institute of Electrical and Electronics Engineers Inc., p. 1424-1427 4 p. (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Photoacoustic Imaging 100%
  • Photoacoustic effect 80%
  • Ultrasonic transducers 72%
  • Body sensor networks 71%
  • Transducer 61%
  1 Citation (Scopus)

• First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

  Chang, S. W., Lu, T. H., Yang, C. Y., Yeh, C. J., Huang, M. K., Meng, C. F., Chen, P. J., Chang, T. H., Chang, Y. S., Jhu, J. W., Hong, T. Z., Ke, C. C., Yu, X. R., Lu, W. H., Baig, M. A., Cho, T. C., Sung, P. J., Su, C. J., Hsueh, F. K., Chen, B. Y., & 21 othersHu, H. H., Wu, C. T., Lin, K. L., Ma, W. C. Y., Lu, D. D., Kao, K. H., Lee, Y. J., Lin, C. L., Huang, K. P., Chen, K. M., Li, Y., Samukawa, S., Chao, T. S., Huang, G. W., Wu, W. F., Lee, W. H., Li, J. Y., Shieh, J. M., Tarng, J. H., Wang, Y. H. & Yeh, W. K., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 34.4.1-34.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2021-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Static random access storage 100%
  • Etching 96%
  • Field effect transistors 95%
  • Fluorine 82%
  • Demonstrations 73%
  6 Citations (Scopus)

• Investigating the applicability of ferroelectric hafnium-zirconium-oxide-based nanowire transistors in silicon photonics

  Chuang, R. W., Lee, Y. L., Huang, Y. C., Lee, Y. J. & Su, C. J., 2021, Silicon Photonics XVI. Reed, G. T. & Knights, A. P. (eds.). SPIE, 1169114. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11691).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Silicon Photonics 100%
  • Nanowires 77%
  • Hafnium 71%
  • Silicon photonics 66%
  • Oxides 62%

• Vertically-waveguide-coupled BaTiO₃-based microdisk optical resonator equipped with the functionality of resistive random-access memory (ReRAM)

  Chuang, R. W., Zheng, Z. Y., Huang, C. L. & Liu, B. L., 2021, Integrated Optics: Devices, Materials, and Technologies XXV. Garcia-Blanco, S. M. & Cheben, P. (eds.). SPIE, 116891Q. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11689).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Optical Resonators 100%
  • Optical resonators 94%
  • Random Access 76%
  • optical resonators 67%
  • Waveguide 64%
  1 Citation (Scopus)
• 2020

  3D integration of vertical-stacking of MoS₂and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers

  Su, C. J., Huang, M. K., Lee, K. S., Hu, V. P. H., Huang, Y. F., Zheng, B. C., Yao, C. H., Lin, N. C., Kao, K. H., Hong, T. C., Sung, P. J., Wu, C. T., Yu, T. Y., Lin, K. L., Tseng, Y. C., Lin, C. L., Lee, Y. J., Chao, T. S., Li, J. Y., Wu, W. F., & 3 othersShieh, J. M., Wang, Y. H. & Yeh, W. K., 2020 Dec 12, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 12.2.1-12.2.4 9371988. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2020-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • RRAM 100%
  • CMOS 63%
  • Surface Modification 61%
  • wafers 53%
  • configurations 38%
  7 Citations (Scopus)

• First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)

  Hong, T. Z., Chang, W. H., Agarwal, A., Huang, Y. T., Yang, C. Y., Chu, T. Y., Chao, H. Y., Chuang, Y., Chung, S. T., Lin, J. H., Luo, S. M., Tsai, C. J., Li, M. J., Yu, X. R., Lin, N. C., Cho, T. C., Sung, P. J., Su, C. J., Luo, G. L., Hsueh, F. K., & 24 othersLin, K. L., Ishii, H., Irisawa, T., Maeda, T., Wu, C. T., Ma, W. C. Y., Lu, D. D., Kao, K. H., Lee, Y. J., Chen, H. J. H., Lin, C. L., Chuang, R. W., Huang, K. P., Samukawa, S., Li, Y. M., Tarng, J. H., Chao, T. S., Miura, M., Huang, G. W., Wu, W. F., Li, J. Y., Shieh, J. M., Wang, Y. H. & Yeh, W. K., 2020 Dec 12, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 15.5.1-15.5.4 9372001. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2020-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Heterojunction bipolar transistors 100%
  • Field effect transistors 90%
  • Demonstrations 69%
  • field effect transistors 66%
  • Ambient Reaction Temperature 47%
  12 Citations (Scopus)

• Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT

  Mazumder, S. & Wang, Y. H., 2020 Mar 4, 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9262998. (3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Passivation 100%
  • Electron Mobility 98%
  • High electron mobility transistors 95%
  • high electron mobility transistors 85%
  • passivity 76%
  3 Citations (Scopus)

• Large-area reduced graphene oxide photodetectors for low-light intensity and low-driving voltage operation

  Xing, Y. F. & Tu, W. C., 2020 Jul, NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings. IEEE Computer Society, p. 334-337 4 p. 9183626. (Proceedings of the IEEE Conference on Nanotechnology; vol. 2020-July).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Reduced Graphene Oxide 100%
  • Photodetectors 81%
  • low voltage 61%
  • luminous intensity 58%
  • photometers 55%
  1 Citation (Scopus)

• Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

  Huang, Y. P., Lee, C. S. & Hsu, W. C., 2020 Jun, 2020 Device Research Conference, DRC 2020. Institute of Electrical and Electronics Engineers Inc., 9135151. (Device Research Conference - Conference Digest, DRC; vol. 2020-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Fluorine 100%
  • High electron mobility transistors 83%
  • Two dimensional electron gas 42%
  • Power electronics 23%
  • Electron mobility 18%
  6 Citations (Scopus)

• Process and Structure Considerations for the Post FinFET Era

  Su, C. J., Sung, P. J., Kao, K. H., Lee, Y. J., Wu, W. F. & Yeh, W. K., 2020 Jun, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., p. 13-14 2 p. 9131422. (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanosheets 100%
  • FinFET 84%
  • Nanowires 81%
  • Field effect transistors 70%
  • Nanowire 57%
  4 Citations (Scopus)

• Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

  Chen, Y. C., Tang, S. W., Lin, P. H., Chen, Z. C., Lu, M. H., Kao, K. H. & Wu, T. L., 2020 Jul 20, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 9260944. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2020-July).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Silicon nitride 100%
  • Passivation 99%
  • High electron mobility transistors 95%
  • Threshold voltage 90%
  • Two dimensional electron gas 72%
  3 Citations (Scopus)

• The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices

  Chuang, R. W., Huang, M. C., Hu, Y. K. & Zheng, Z. Y., 2020, Integrated Optics: Devices, Materials, and Technologies XXIV. Garcia-Blanco, S. M. & Cheben, P. (eds.). SPIE, 1128328. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11283).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nickel oxide 100%
  • Nickel 92%
  • RRAM 89%
  • Random Access 88%
  • Oxides 87%

• The integrated vertically coupled resistive random-access memory (ReRAM)-based microdisk resonator and the relevant performance evaluation

  Chuang, R. W., Fu, K. L. & Zheng, Z. Y., 2020, Integrated Optics: Devices, Materials, and Technologies XXIV. Garcia-Blanco, S. M. & Cheben, P. (eds.). SPIE, 1128327. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 11283).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Resonator 100%
  • Random Access 99%
  • random access memory 82%
  • Resonators 66%
  • resonators 53%
  2 Citations (Scopus)

• Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K

  De, S., Baig, M. A., Qiu, B. H., Lu, D., Sung, P. J., Hsueh, F. K., Lee, Y. J. & Su, C. J., 2020 Jun, 2020 Device Research Conference, DRC 2020. Institute of Electrical and Electronics Engineers Inc., 9135186. (Device Research Conference - Conference Digest, DRC; vol. 2020-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Neural networks 46%
  • Data storage equipment 30%
  • Temperature 30%
  13 Citations (Scopus)

• Wearable transparent PVDF transducer for photoacoustic imager in body sensor network

  Liu, Y. H., Lin, F. S., Chen, L. X., Su, H. Y., Hsu, Y. C., Pal, S., Wang, Y. H. & Huang, C. H., 2020 Sept 7, IUS 2020 - International Ultrasonics Symposium, Proceedings. IEEE Computer Society, 9251521. (IEEE International Ultrasonics Symposium, IUS; vol. 2020-September).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • vinylidene 100%
  • fluorides 87%
  • transducers 73%
  • indium oxides 59%
  • tin oxides 58%
  3 Citations (Scopus)
• 2019

  A compact multi transmission zero dual-passband filter using dual stepped impedance resonators

  Tai, T. C., Lin, K. J., Chen, Y. W., Wu, H. W., Su, Y. K., Wang, Y. H. & Lai, H. Y., 2019 May 14, 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 8714411. (IEEE Radio and Wireless Symposium, RWS).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Resonators 100%
  • simulation 84%
  • Acoustic impedance 78%
  • Electromagnetic simulation 43%
  • Bandpass filters 36%
  2 Citations (Scopus)

• A Compact Triple Passband Bandpass Filter Using Stub Load - Uniform impedance Resonators

  Lin, K. J., Li, Z. F., Tai, T. C., Wu, H. W. & Wang, Y. H., 2019 Dec, Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019. Institute of Electrical and Electronics Engineers Inc., 8986364. (Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Bandpass filters 100%
  • Resonators 92%
  • Acoustic impedance 72%
  • Electromagnetic simulation 29%
  • Multipath propagation 28%

• A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

  Tang, Y. T., Fan, C. L., Kao, Y. C., Modolo, N., Su, C. J., Wu, T. L., Kao, K. H., Wu, P. J., Hsaio, S. W., Useinov, A., Su, P., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T222-T223 8776508. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectricity 100%
  • Ferroelectric materials 92%
  • Interfacial energy 86%
  • Field effect transistors 74%
  • Capacitance 59%
  16 Citations (Scopus)

• A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

  Huang, P. K., Chen, H. Y., Wang, S-J., Ko, R-M., Huang, A. C. & Chiang, M-H., 2019 Sept 2, International Conference on Solid State Devices and Materials (SSDM’19). Nagoya University, Aichi, Japan

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• A New Transparent Planar Reflector Antennas for Satellite DTV Applications

  Lin, Y. M., Li, Z. F., Tai, T. C., Wu, H. W., Chang, S. J. & Wang, Y. H., 2019 Dec, Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019. Institute of Electrical and Electronics Engineers Inc., 8986280. (Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Antenna reflectors 100%
  • Thin films 74%
  • Satellites 60%
  • Conductive films 58%
  • Opacity 50%

• Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer

  Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., Huang, P. K. & Kao, K. H., 2019 May, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ytterbium 100%
  • Ohmic contacts 88%
  • Fermi Level 68%
  • Work Function 67%
  • Annealing 58%
  2 Citations (Scopus)

• Enhancement of light harvesting for organic solar cells via halogenated (sub-)phthalocyanines and fullerene

  Huang, P. H., Wang, Y. H. & Huang, C. J., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8754074. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Organic solar cells 100%
  • Fullerenes 96%
  • fullerenes 64%
  • Molecules 60%
  • Vacuum evaporation 55%

• Exploring the impacts of long-period corrugation and phase gratings on a cascade of phase-shifted lithium niobate waveguides with the combined theoretical and experimental approaches

  Chuang, R. W., Huang, Y. C. & Lee, Y. J., 2019, Physics and Simulation of Optoelectronic Devices XXVII. Osinski, M., Arakawa, Y. & Witzigmann, B. (eds.). SPIE, 1091216. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10912).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Lithium Niobate 100%
  • Gratings 67%
  • Waveguide 56%
  • Lithium 53%
  • Cascade 51%
  2 Citations (Scopus)

• Fabrication of omega-gated negative capacitance finfets and SRAM

  Sung, P. J., Su, C. J., Lu, D. D., Luo, S. X., Kao, K. H., Ciou, J. Y., Jao, C. Y., Hsu, H. S., Wang, C. J., Hong, T. C., Liao, T. H., Fang, C. C., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Ma, W. C. Y., Huang, K. P., & 6 othersLee, Y. J., Chao, T. S., Li, J. Y., Wu, W. F., Yeh, W. K. & Wang, Y. H., 2019 Apr, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804663. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET 100%
  • Static random access storage 87%
  • Capacitance 66%
  • Annealing 61%
  • Ferroelectricity 49%
  4 Citations (Scopus)

• First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

  Chang, S. W., Li, J. H., Huang, M. K., Huang, Y. C., Huang, S. T., Wang, H. C., Huang, Y. J., Wang, J. Y., Yu, L. W., Huang, Y. F., Hsueh, F. K., Sung, P. J., Wu, C. T., Ma, W. C. Y., Kao, K. H., Lee, Y. J., Lin, C. L., Chuang, R. W., Huang, K. P., Samukawa, S., & 16 othersLi, Y., Lee, W. H., Chu, T. Y., Chao, T. S., Huang, G. W., Wu, W. F., Li, J. Y., Shieh, J. M., Yeh, W. K., Wang, Y. H., Lu, D. D., Wang, C. J., Lin, N. C., Su, C. J., Lo, S. H. & Huang, H. F., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993525. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • inverters 100%
  • Static random access storage 89%
  • Field effect transistors 86%
  • CMOS 72%
  • Demonstrations 65%
  53 Citations (Scopus)

• Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM

  Chen, P. A., Hsu, W. C. & Chiang, M. H., 2019 Oct, 2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019. Institute of Electrical and Electronics Engineers Inc., 9084024. (2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Titanium oxides 100%
  • Boron nitride 95%
  • Boron Nitride 77%
  • Titanium Oxide 74%
  • Multilayers 65%
  1 Citation (Scopus)

• New Compact Triple-Passband Bandpass Filter with wide stopband

  Jiang, Y. C., Chen, Y. W., Lu, Y. C., Lin, K. J., Tai, T. C., Wu, H. W. & Wang, Y. H., 2019 Aug, 2019 International Conference on Engineering, Science, and Industrial Applications, ICESI 2019. Institute of Electrical and Electronics Engineers Inc., 8863028. (2019 International Conference on Engineering, Science, and Industrial Applications, ICESI 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Bandpass Filter 100%
  • Filter 64%
  • Bandpass filters 63%
  • Electric Impedance 62%
  • Acoustic impedance 45%
  6 Citations (Scopus)

• Speed Optimization of Vertically Stacked Gate-All-Around MOSFETs with Inner Spacers for Low Power and Ultra-Low Power Applications

  Huang, Y. C., Chiang, M. H. & Wang, S. J., 2019 Apr 23, Proceedings of the 20th International Symposium on Quality Electronic Design, ISQED 2019. IEEE Computer Society, p. 231-234 4 p. 8697706. (Proceedings - International Symposium on Quality Electronic Design, ISQED; vol. 2019-March).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Semiconductor doping 100%
  • Leakage currents 71%
  • Controllability 68%
  • System-on-chip 67%
  • Masks 62%
  4 Citations (Scopus)
• 2018

  Absorption of high-frequency power by using graphene films

  Lin, G. S., Chen, L. S. & Houng, M., 2018 Oct 1, Proceedings of the 2017 IEEE International Conference on Information, Communication and Engineering: Information and Innovation for Modern Technology, ICICE 2017. Lam, A. D. K-T., Prior, S. D. & Meen, T-H. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 87-89 3 p. 8479120. (Proceedings of the 2017 IEEE International Conference on Information, Communication and Engineering: Information and Innovation for Modern Technology, ICICE 2017).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Wireless Communication 38%
  • Sheet resistance 29%
  • Substrate 27%
  • Screen printing 27%
  • Microstrip lines 24%

• A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node

  Tang, Y. T., Su, C. J., Wang, Y. S., Kao, K. H., Wu, T. L., Sung, P. J., Hou, F. J., Wang, C. J., Yeh, M. S., Lee, Y. J., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2018 Oct 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 45-46 2 p. 8510696. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2018-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Capacitance 64%
  • Depolarization 35%
  • Doping (additives) 28%
  17 Citations (Scopus)

• A Novel Gate-all-around Ultra-thin Body Field Effect Transistor (G-UTBFET) with Enhanced Short Channel Behaviors and Low Off-state Leakage Current

  Huang, I. C., Wang, S-J., Huang, Y. C., Chen, H. Y. & Chiang, M-H., 2018 Jun 17, 2018 IEEE Silicon Nanoelectronics Workshop (SNW).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• A predictive resistive RAM compact model with synaptic behavior for circuit simulations

  Lee, J. W., Hsu, C. H. & Chiang, M. H., 2018 Jan 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (eds.). TechConnect, p. 232-235 4 p. (TechConnect Briefs 2018 - Advanced Materials; vol. 4).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • RRAM 100%
  • Circuit simulation 80%
  • Simulation 45%
  • Data storage equipment 43%
  • Plastic Property 41%

• A unified quantum scaling length model for nanometer multiple-gate MOSFETs

  Chiang, T. K., Ko, Y. W., Lin, Y. H., Gao, H. W. & Wang, Y. H., 2018 Jun 22, Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Quantum confinement 100%
  • field effect transistors 85%
  • scaling 75%
  • Zero Point Energy 72%
  • Length 64%
  2 Citations (Scopus)

• Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM

  Chen, J. Y., Chang, M. Y., Chen, S. H., Lee, J. W. & Chiang, M. H., 2018 May 9, 2018 19th International Symposium on Quality Electronic Design, ISQED 2018. IEEE Computer Society, p. 151-155 5 p. (Proceedings - International Symposium on Quality Electronic Design, ISQED; vol. 2018-March).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Static random access storage 100%
  • Electric potential 46%

• Design Considerations with Augmented Spacer Dielectric for Vertically Stacked Gate-All-Around MOSFET,

  Huang, Y. C., Chen, S. H., Chiang, M-H. & Wang, S-J., 2018 May 21, IEEE Semiconductor Interface Specialists Conference.

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• Design of Dual-Band Transparent Antenna by Using Nano-Structured Thin Film Coating Technology

  Lin, Y. M., Wu, H. W., Tai, T. C., Hung, C. Y., Chang, S. J. & Wang, Y. H., 2018 Aug 17, Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc., p. 359-362 4 p. 8439244. (IEEE MTT-S International Microwave Symposium Digest; vol. 2018-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Thin films 100%
  • coating 96%
  • antennas 91%
  • Coatings 79%
  • Antennas 68%
  3 Citations (Scopus)

• Fabrication of MEMS electronics devices based on fire-like ZnO nanosheets by low-temperature hydrothermal synthesis technology

  Tsai, Y. T., Chang, S. J., Tang, I. T., Hsiao, Y. J. & Ji, L. W., 2018, ECS Transactions. 13 ed. IOP Publishing Ltd., p. 1489-1493 5 p. (ECS Transactions; vol. 85, no. 13).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hydrothermal synthesis 100%
  • Nanosheets 89%
  • Zinc oxide 78%
  • MEMS 54%
  • Electronic equipment 49%

• Ge nanowire FETs with HfZrO_x ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

  Su, C. J., Hong, T. C., Tsou, Y. C., Hou, F. J., Sung, P. J., Yeh, M. S., Wan, C. C., Kao, K. H., Tang, Y. T., Chiu, C. H., Wang, C. J., Chung, S. T., You, T. Y., Huang, Y. C., Wu, C. T., Lin, K. L., Luo, G. L., Huang, K. P., Lee, Y. J., Chao, T. S., & 5 othersWu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 15.4.1-15.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials 100%
  • Nanowires 93%
  • Field effect transistors 81%
  • Nanowire 65%
  • nanowires 61%
  18 Citations (Scopus)