Master Degree Program on Nano-Integrated-Circuit Engineering

Research Output 1980 2019

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Paper
2014

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

Zeng, X. F., Chang, S-J. & Shei, S. C., 2014 Jan 1, p. 265-268. 4 p.

Research output: Contribution to conferencePaper

Light emitting diodes
Etching
Masks
Nanoparticles
Adsorption

Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

Zeng, X. F., Chang, S. J., Lo, H. M. & Shei, S. C., 2014 Jan 1, p. 261-264. 4 p.

Research output: Contribution to conferencePaper

Light emitting diodes
Plasmas
Electrodes
Plasma
Testing

Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C 60 )

Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 Jan 1, p. 47-49. 3 p.

Research output: Contribution to conferencePaper

Fullerenes
Boron
Molecular orbitals
Tin oxides
Indium
2011
2 Citations (Scopus)

Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations

Venugopalan, S., Chauhan, Y. S., Lu, D., Karim, M. A., Niknejad, A. M. & Hu, C., 2011 Dec 1, p. 125-128. 4 p.

Research output: Contribution to conferencePaper

Circuit simulation
Field effect transistors
Gates (transistor)
Drain current
SPICE
2010

Broad band-SrSi2O2N2: Eu2+ phosphor for solid-state lighting and photovoltaic cell

Fang, Y. C. & Chu, S-Y., 2010 Dec 1, p. 1103-1104. 2 p.

Research output: Contribution to conferencePaper

Photovoltaic cells
Phosphors
Lighting
Exchange interactions
Solid state reactions

The other crucial factor dominates the holes injection efficiency of ultra-thin anode buffer layer on organic light emitting devices

Chu, S-Y., Chen, Y. C., Huang, H. H. & Kao, P. C., 2010 Dec 1, p. 1227-1228. 2 p.

Research output: Contribution to conferencePaper

Buffer layers
Interfacial energy
Anodes
Energy barriers
Substrates
2007

Asymmetrical triple-gate FET

Chiang, M-H., Lin, J. N., Kim, K. & Chuang, C. T., 2007 Jan 1, p. 389-392. 4 p.

Research output: Contribution to conferencePaper

Field effect transistors
Polysilicon
MOSFET
High Performance
Metals
1 Citation (Scopus)

Compact modeling for new transistor structures

Hu, C., Dunga, M., Lin, C. H., Lu, D. & Niknejad, A., 2007 Jan 1, p. 285-288. 4 p.

Research output: Contribution to conferencePaper

Transistors
MOSFET
Modeling
Surface Potential
Static random access storage
2006

Novel FD SOI devices structure for low standby power applications

Ma, M. W., Chao, T. S., Kao, K-H., Huang, J. S. & Lei, T. F., 2006 Dec 12, p. 59-62. 4 p.

Research output: Contribution to conferencePaper

Leakage currents
Ions
Energy dissipation
Electric fields
Electrons
2005

Effects of post-growth annealing treatment on the photoluminescence of ZnO nanorods

Wang, D., Sathitsuksanoh, N., Yang, H. Y., Seo, H. W., Tzeng, Y-H., Tin, C. C., Bozack, M. J., Williams, J. R. & Park, M., 2005 Dec 1, p. 11075-11083. 9 p.

Research output: Contribution to conferencePaper

Nanorods
Photoluminescence
Annealing
2004
2 Citations (Scopus)

A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs

Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y. H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 101-104. 4 p.

Research output: Contribution to conferencePaper

Monolithic microwave integrated circuits
Wireless local area networks (WLAN)
Power amplifiers

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y. H., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 105-108. 4 p.

Research output: Contribution to conferencePaper

Power amplifiers
Base stations
3 Citations (Scopus)

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 Dec 1, p. 2301-2304. 4 p.

Research output: Contribution to conferencePaper

High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown

Liquid phase oxidation on GaAs-based materials and the applications

Wang, Y-H., 2004 Dec 1, p. 2291-2296. 6 p.

Research output: Contribution to conferencePaper

Oxidation
Liquids
Oxides
2003

Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices

Liu, C-P., Chen, R. & Lai, Y. L., 2003 Jan 1, p. 16-20. 5 p.

Research output: Contribution to conferencePaper

Aluminum Oxide
Superlattices
Metallorganic chemical vapor deposition
Optical devices
Laser modes

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

Lai, Y. L., Chen, R., Liu, C-P. & Lin, Y. W., 2003 Jan 1, p. 174-178. 5 p.

Research output: Contribution to conferencePaper

Buffer layers
Electron diffraction
Doping (additives)
Organic Chemicals
Aluminum Oxide
2002
10 Citations (Scopus)

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 33-36. 4 p.

Research output: Contribution to conferencePaper

Monolithic microwave integrated circuits
Power amplifiers
1 Citation (Scopus)

High reliability in low noise InGaP gated PHEMTs

Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 81-84. 4 p.

Research output: Contribution to conferencePaper

High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance
1 Citation (Scopus)

Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

Sinha, S., Chiang, M. H. & Pelella, M. M., 2002 Jan 1, p. 41-42. 2 p.

Research output: Contribution to conferencePaper

Silicon on insulator technology
Capacitance
2001
1 Citation (Scopus)

Super low noise InGaP gated PHEMT

Huang, H. K., Wang, Y-H., Wu, C. L., Wang, J. C. & Chang, C. S., 2001 Jan 1, p. 237-240. 4 p.

Research output: Contribution to conferencePaper

Wet etching
Drain current
Noise figure
Transconductance
Threshold voltage
2000

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 Dec 1, p. 149-154. 6 p.

Research output: Contribution to conferencePaper

Masks
Oxidation
Oxides
Cutoff frequency
Transconductance
1999

A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications

Liu, W-C., Cheng, S. Y., Wang, W. C., Chen, J. Y., Pan, H. J., Feng, S. C. & Yu, K. H., 1999 Dec 1.

Research output: Contribution to conferencePaper

Bipolar transistors
Heterojunctions
Heterojunction bipolar transistors
Electric breakdown
Electric potential

A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Liu, W-C., Chang, W. L., Chen, J. Y., Pan, H. J., Wang, W. C., Yu, K. H. & Feng, S. C., 1999 Dec 1.

Research output: Contribution to conferencePaper

Electric breakdown
Heterojunctions
Transistors
Gates (transistor)
Cutoff frequency
1 Citation (Scopus)

Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

Liu, W-C., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. & Yan, J. H., 1999 Jan 1, p. 246-248. 3 p.

Research output: Contribution to conferencePaper

Heterojunction bipolar transistors
Doping (additives)
Electric potential
Passivation
gallium arsenide

High-barrier gate and tri-step doped channel transistor

Liu, W-C., Pan, H. J., Chang, W. L., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 Jan 1, p. 454-456. 3 p.

Research output: Contribution to conferencePaper

Transconductance
Electric breakdown
Transistors
MESFET devices
Gates (transistor)

High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Liu, W-C., Chang, W. L., Chen, J. Y., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 Jan 1, p. 457-459. 3 p.

Research output: Contribution to conferencePaper

Transconductance
High electron mobility transistors
Electric breakdown
Current density
Microwaves

InGaP/GaAs resonant-tunneling transistor (RTT)

Liu, W-C., Shie, Y. S., Chang, W. L., Feng, S. C., Yu, K. H. & Yan, J. H., 1999 Jan 1, p. 240-242. 3 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Bipolar transistors
Current voltage characteristics
Valence bands
Transistors

New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Liu, W-C., Wang, W. C., Chang, W. L., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 Jan 1, p. 243-245. 3 p.

Research output: Contribution to conferencePaper

Heterojunction bipolar transistors
Electric potential
Electric breakdown
Heterojunctions
Electric power utilization

On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

Liu, W-C., Cheng, S. Y., Pan, H. J., Feng, S. C., Yu, K. H. & Yan, J. H., 1999 Jan 1, p. 249-251. 3 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Transistors
Switches
Temperature
1998
1 Citation (Scopus)

Analytic model for asymmetric trapezoidal-gate MOSFET

Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 Dec 1, p. 420-423. 4 p.

Research output: Contribution to conferencePaper

Capacitance
Drain current
Poisson equation
Green's function
Polynomials
1997

Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

Lin, C. T., Su, Y. K., Huang, H. T., Chang, S. J., Chen, G. S., Sun, T. P. & Luo, J. J., 1997 Jan 1, p. 168-174. 7 p.

Research output: Contribution to conferencePaper

Passivation
Detectors
Focal plane arrays
Spectral density
Oxides
1996
3 Citations (Scopus)

Investigation of step-doped channel heterostructure field-effect transistor

Liu, W. C., Laih, L. W., Tsai, J. H., Chen, J. Y., Wang, W. C. & Lin, P. H., 1996 Dec 1, p. 251-254. 4 p.

Research output: Contribution to conferencePaper

Transconductance
High electron mobility transistors
Threshold voltage
Electric breakdown
Networks (circuits)

New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

Liu, W-C., Tsai, J. H., Laih, L. W., Chen, H. R., Cheng, S. Y., Wang, W. C., Lin, P. H. & Chen, J. Y., 1996 Dec 1, p. 247-250. 4 p.

Research output: Contribution to conferencePaper

Semiconductor quantum wells
Heterojunctions
Transistors
Valence bands
Electrons

On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's)

Liu, W-C., Tsai, J. H., Laih, L. W., Cheng, S. Y., Wang, W. C., Lin, P. H., Chen, J. Y. & Lin, H. H., 1996 Dec 1, p. 243-246. 4 p.

Research output: Contribution to conferencePaper

Bipolar transistors
Heterojunctions
Electric potential
Transistors
Electric properties

Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

Chen, J. F., Gelatos, C., Tobin, P., Shimer, R. & Hu, C., 1996 Dec 1, p. 94-97. 4 p.

Research output: Contribution to conferencePaper

Antennas
Oxides
Leakage currents
Transistors
Processing
1995
1 Citation (Scopus)

GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Liu, W-C., Laih, L. W., Tsai, J. H., Thei, K. B., Wu, C. Z., Lour, W. S., Ting, Y. T. & Liu, R. C., 1995 Dec 1, p. 103-106. 4 p.

Research output: Contribution to conferencePaper

Field effect transistors
Transistors
Electron mobility
Photoconductivity
Electric potential

GaAs tri-step high-low doping channel field effect transistor

Liu, W-C., Tsai, J. H., Li-Wen, Thei, K. B., Wu, C. Z., Lour, W. S., Yuan-Tzu & Liu, R. C., 1995 Dec 1, p. 107-110. 4 p.

Research output: Contribution to conferencePaper

Field effect transistors
Doping (additives)
Gates (transistor)
Drain current
Transconductance

Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer

Lour, W. S., Liu, W-C., Tsai, J. H., Laih, L. W., Chen, J. R. & Tsai, M. K., 1995 Dec 1, p. 95-98. 4 p.

Research output: Contribution to conferencePaper

Anodes
Electric potential
Impact ionization
Logic circuits
Molecular beam epitaxy
1994

A GaAs double negative differential resistance device with a p+ AlGaAs base

Yarn, K. F., Chang, C. Y., Wang, Y-H., Wei, H. C., Sze, P. W. & Jeng, J. M., 1994 Jan 1.

Research output: Contribution to conferencePaper

Electric potential
Gases
Temperature
gallium arsenide
1 Citation (Scopus)
Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields

MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

Liu, W-C., Guo, D. F. & Laih, L. W., 1994 Jan 1.

Research output: Contribution to conferencePaper

Resonant tunneling
Molecular beam epitaxy
Semiconductor quantum wells
gallium arsenide
16 Citations (Scopus)

Photo-acoustic devices using (Pb,La)(Zr,Ti)O3 ceramics

Chu, S-Y. & Uchino, K., 1994 Dec 1, p. 743-745. 3 p.

Research output: Contribution to conferencePaper

Acoustic devices
Piezoelectricity
Photoacoustic effect
Ferroelectric materials
Lead

The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

Liu, M. H., Wang, Y-H., Houng, M., Chen, J. F. & Cho, A. Y., 1994 Jan 1.

Research output: Contribution to conferencePaper

Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide
1991

Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

Liu, W-C., Lour, W. S., Wang, Y-H., Sun, C. Y., Lee, Y. S. & Guo, D. F., 1991 Jan 1, p. 371-373. 3 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Bipolar transistors
Transistors
Electrons
Temperature

MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Wang, Y-H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991 Jan 1, p. 329-331. 3 p.

Research output: Contribution to conferencePaper

Surface emitting lasers
Molecular beam epitaxy
Photodetectors
Distributed Bragg reflectors
Quantum well lasers

Room temperature characteristics of GaAs δ-doped superlattice switching transistor

Liu, W. C., Sun, C. Y., Lour, W. S., Guo, D. F. & Lee, Y. S., 1991 Jan 1, p. 368-370. 3 p.

Research output: Contribution to conferencePaper

Transistors
Semiconductor junctions
Current voltage characteristics
Transport properties
Anodes
1990

MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

Yarn, K. F., Chang, C. Y., Wang, Y-H. & Wang, R. L., 1990 Dec 1, p. 55-58. 4 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Hot electrons
Molecular beam epitaxy
Transistors
Current density

Negative differential resistance in a novel GaAs delta-doping tunneling diode

Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 Dec 1, p. 27-29. 3 p.

Research output: Contribution to conferencePaper

Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics
1987
3 Citations (Scopus)

FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

Tzeng, Y-H., Lin, T. H., Davidson, J. L. & Lan, L. S., 1987 Jan 1, p. 187-190. 4 p.

Research output: Contribution to conferencePaper

Diamonds
Diodes
Fabrication
Bipolar transistors
Ion implantation
1985

ROLES OF N//2 O IN CF//4 plus N//2 O PLASMA ETCHING OF SILICON AND PHOTORESIST.

Tzeng, Y-H., Lin, T. H., Davidson, J. L. & Jang, B. Z., 1985 Dec 1, p. 28-33. 6 p.

Research output: Contribution to conferencePaper

Plasma etching
Photoresists
Plasmas
Silicon
Etching