Master Degree Program on Nano-Integrated-Circuit Engineering

Research output

Research output per year 1982 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2024

• 1462 Article
• 329 Conference contribution
• 128 Patent
• 64 Conference article
• 59 More
  • 29 Paper
  • 8 Review article
  • 7 Chapter
  • 6 Letter
  • 5 Editorial
  • 4 Comment/debate

Research output per year

Research output per year

Search results

• 2014

  Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C ₆₀ )

  Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 Jan 1, p. 47-49. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Organic solar cells 100%
  • Fullerenes 96%
  • Boron 70%
  • Molecules 60%
  • Molecular orbitals 23%
• 2010

  Broad band-SrSi₂O₂N₂: Eu²⁺ phosphor for solid-state lighting and photovoltaic cell

  Fang, Y. C. & Chu, S-Y., 2010 Dec 1, p. 1103-1104. 2 p.

  Research output: Contribution to conference › Paper › peer-review

  • Phosphors 100%
  • Photovoltaic cells 92%
  • Exchange interactions 69%
  • Lighting 60%
  • Solid state reactions 58%
• 2006

  Dielectric behavior of PFW-PT relaxors: Model-parameters extraction

  Hong, C. S., Chu, S. Y., Su, W. C., Chang, R. C., Nien, H. H. & Juang, Y. D., 2006, p. 140-143. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Parameter extraction 100%
  • Dielectric Constant 72%
  • Dielectric Material 69%
  • Permittivity 39%
  • Temperature 7%

• Novel FD SOI devices structure for low standby power applications

  Ma, M. W., Chao, T. S., Kao, K. H., Huang, J. S. & Lei, T. F., 2006, p. 59-62. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Ions 100%
  • Leakage currents 77%
  • Electrons 36%
  • Electric fields 33%
  • Energy dissipation 30%
• 2004

  A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs

  Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y. H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 101-104. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Monolithic microwave integrated circuits 100%
  • Power amplifiers 87%
  • Wireless local area networks (WLAN) 85%
  • Acoustic impedance 64%
  2 Citations (Scopus)
• 2003

  Effect of Ta₂N crystallinity on diffusion barrier properties

  Chung, H. C. & Liu, C. P., 2003 Jan 1, p. 161-166. 6 p.

  Research output: Contribution to conference › Paper › peer-review

  • Diffusion barriers 100%
  • Diffusion Barrier 85%
  • Crystallinity 82%
  • Crystalline materials 47%
  • Annealing 44%

• Eletrical and mechanical properies of nitrogen and fluorine incorporated organosilicate glass prepared by plasma enhanced chemical vapor deposition

  JangJian, S. K., Liu, C. P., Hwang, W. S., Chen, S. W., Wei, K. H. & Wang, Y. L., 2003, p. 188-194. 7 p.

  Research output: Contribution to conference › Paper › peer-review

  • Plasma enhanced chemical vapor deposition 100%
  • Fluorine 97%
  • Plasma Enhanced Chemical Vapour Deposition 84%
  • Fluorine Atom 61%
  • Glass 56%
  1 Citation (Scopus)

• Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices

  Liu, C. P., Chen, R. & Lai, Y. L., 2003 Jan 1, p. 16-20. 5 p.

  Research output: Contribution to conference › Paper › peer-review

  • Superlattices 100%
  • Photoluminescence 86%
  • Metallorganic chemical vapor deposition 84%
  • Semiconductor quantum wells 83%
  • Luminescence 78%

• Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

  Lai, Y. L., Chen, R., Liu, C. P. & Lin, Y. W., 2003 Jan 1, p. 174-178. 5 p.

  Research output: Contribution to conference › Paper › peer-review

  • Buffer layers 100%
  • Electron diffraction 92%
  • Doping (additives) 78%
  • Convergent Beam Electron Diffraction 78%
  • Superlattice 72%

• Thickness effect on the diffusion barrier properties of ZrN in Cu/ZrN/Si systems

  Chen, C. S., Liu, C. P., Yang, H. G. & Tsao, C. Y. A., 2003 Jan 1, p. 146-153. 8 p.

  Research output: Contribution to conference › Paper › peer-review

  • Diffusion barriers 100%
  • Diffusion Barrier 85%
  • Annealing 67%
  • Liquid Film 32%
  • Reactive sputtering 26%
• 2002

  High reliability in low noise InGaP gated PHEMTs

  Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 81-84. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • High electron mobility transistors 100%
  • Thermal stress 85%
  • Transconductance 34%
  • Noise figure 32%
  • Capacitance 24%
  1 Citation (Scopus)

• Impact of gate tunneling on the nature of the charge dump current in 100 nm PDSOI technology

  Sinha, S., Chiang, M. H. & Pelella, M. M., 2002 Jan 1, p. 41-42. 2 p.

  Research output: Contribution to conference › Paper › peer-review

  • Silicon on insulator technology 100%
  • Nonconductor 75%
  • Tunneling 68%
  • Capacitance 57%
  • Tunneling Current 51%
  1 Citation (Scopus)
• 1999

  A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications

  Liu, W-C., Cheng, S. Y., Wang, W. C., Chen, J. Y., Pan, H. J., Feng, S. C. & Yu, K. H., 1999 Dec 1.

  Research output: Contribution to conference › Paper › peer-review

  • Breakdown Voltage 100%
  • Heterojunctions 87%
  • Bipolar transistors 82%
  • Heterojunction bipolar transistors 59%
  • Electric breakdown 56%

• A high-breakdown voltage n⁺-GaAs/δ (p⁺)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

  Liu, W-C., Chang, W. L., Chen, J. Y., Pan, H. J., Wang, W. C., Yu, K. H. & Feng, S. C., 1999 Dec 1.

  Research output: Contribution to conference › Paper › peer-review

  • Current Gain 100%
  • Transconductance 86%
  • Breakdown Voltage 84%
  • Leakage Current 73%
  • Heterojunctions 73%

• Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

  Liu, W-C., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. & Yan, J. H., 1999 Jan 1, p. 246-248. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Current Gain 100%
  • Heterojunction bipolar transistors 66%
  • Doping (additives) 62%
  • Voltage 40%
  • Passivation 34%
  1 Citation (Scopus)

• High-breakdown and high-linearity Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT

  Liu, W-C., Chang, W. L., Chen, J. Y., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 Jan 1, p. 457-459. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Schottky Contact 100%
  • Transconductance 94%
  • Breakdown Voltage 92%
  • Fluorescence Maxima 81%
  • High electron mobility transistors 71%

• InGaP/GaAs resonant-tunneling transistor (RTT)

  Liu, W. C., Shie, Y. S., Chang, W. L., Feng, S. C., Yu, K. H. & Yan, J. H., 1999, p. 240-242. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Valence bands 100%
  • Current Gain 98%
  • Resonant Tunneling 97%
  • Resonant tunneling 95%
  • Current voltage characteristics 73%

• New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

  Liu, W-C., Wang, W. C., Chang, W. L., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 Jan 1, p. 243-245. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Heterojunction bipolar transistors 100%
  • Current Gain 74%
  • Breakdown Voltage 63%
  • Voltage 61%
  • Heterojunctions 55%
• 1997

  Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

  Lin, C. T., Su, Y. K., Huang, H. T., Chang, S. J., Chen, G. S., Sun, T. P. & Luo, J. J., 1997, p. 168-174. 7 p.

  Research output: Contribution to conference › Paper › peer-review

  • Passivation 100%
  • Detectors 64%
  • Focal plane arrays 22%
  • Spectral density 22%
  • Oxides 14%
  1 Citation (Scopus)
• 1995

  GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

  Liu, W-C., Laih, L. W., Tsai, J. H., Thei, K. B., Wu, C. Z., Lour, W. S., Ting, Y. T. & Liu, R. C., 1995 Dec 1, p. 103-106. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Field effect transistors 100%
  • Photoconductivity 87%
  • Transistors 79%
  • Electron mobility 73%
  • Heterojunctions 61%
  1 Citation (Scopus)

• GaAs tri-step high-low doping channel field effect transistor

  Liu, W-C., Tsai, J. H., Li-Wen, Thei, K. B., Wu, C. Z., Lour, W. S., Yuan-Tzu & Liu, R. C., 1995 Dec 1, p. 107-110. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Doping (additives) 100%
  • Field effect transistors 95%
  • Gates (transistor) 63%
  • Transconductance 53%
  • Electric potential 46%

• Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer

  Lour, W. S., Liu, W-C., Tsai, J. H., Laih, L. W., Chen, J. R. & Tsai, M. K., 1995 Dec 1, p. 95-98. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Anodes 100%
  • Semiconductor quantum wells 80%
  • Impact ionization 80%
  • Molecular beam epitaxy 80%
  • Electric potential 80%
• 1994

  MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

  Liu, W. C., Guo, D. F. & Laih, L. W., 1994 Jan 1.

  Research output: Contribution to conference › Paper › peer-review

• Photo-acoustic devices using (Pb,La)(Zr,Ti)O₃ ceramics

  Chu, S-Y. & Uchino, K., 1994 Dec 1, p. 743-745. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Acoustic devices 100%
  • Photoacoustic effect 92%
  • Piezoelectricity 82%
  • Ferroelectric materials 77%
  • Doping (additives) 65%
  13 Citations (Scopus)

• The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

  Liu, M. H., Wang, Y. H., Houng, M. P., Chen, J. F. & Cho, A. Y., 1994.

  Research output: Contribution to conference › Paper › peer-review

  • Resonant tunneling 100%
  • Carrier transport 90%
  • Current voltage characteristics 77%
  • Tunneling 59%
  • Resistance 36%
• 1991

  MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

  Wang, Y. H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991, p. 329-331. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Molecular beam epitaxy 100%
  • Surface emitting lasers 91%
  • Photodetectors 55%
  • Quantum well lasers 42%
  • Distributed Bragg reflectors 41%
• 1990

  Negative differential resistance in a novel GaAs delta-doping tunneling diode

  Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 Dec 1, p. 27-29. 3 p.

  Research output: Contribution to conference › Paper › peer-review

  • Doping (additives) 100%
  • Diodes 82%
  • Resonant tunneling 76%
  • Semiconductor quantum wells 70%
  • Impact ionization 69%
• 1987

  FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

  Tzeng, Y., Lin, T. H., Davidson, J. L. & Lan, L. S., 1987 Jan 1, p. 187-190. 4 p.

  Research output: Contribution to conference › Paper › peer-review

  • Diamonds 100%
  • Diodes 92%
  • Ion implantation 45%
  • Bipolar transistors 41%
  • Temperature 40%
  4 Citations (Scopus)
• 1985

  ROLES OF N//2 O IN CF//4 plus N//2 O PLASMA ETCHING OF SILICON AND PHOTORESIST.

  Tzeng, Y-H., Lin, T. H., Davidson, J. L. & Jang, B. Z., 1985 Dec 1, p. 28-33. 6 p.

  Research output: Contribution to conference › Paper › peer-review

  • Plasma etching 100%
  • Photoresists 85%
  • Plasmas 61%
  • Silicon 52%
  • Etching 36%