Research Output per year
Research Output 1980 2019
Erratum: Author Correction: High-quality AlN grown with a single substrate temperature below 1200 °C (Scientific reports (2017) 7 1 (7135))
Huang, C. P., Gupta, K., Wang, C. H., Liu, C-P. & Lai, K. Y., 2018 May 8, In : Scientific reports. 8, 1, 1 p.Research output: Contribution to journal › Comment/debate
Erratum: A compact low-pass filter with ultrabroad stopband characteristics (Microwave and Optical Technology Letters 57:12)
Lan, S. W., Weng, M. H., Chang, S-J. & Hung, C. Y., 2016 May 1, In : Microwave and Optical Technology Letters. 58, 5, 1 p.Research output: Contribution to journal › Comment/debate
Erratum: A high selectivity and wide stopband uwb bandpass filter using asymmetric sirs with split-end (Microwave and Optical Technology Letters)
Weng, M. H., Chen, W. Y., Lan, S. W., Chang, S-J., Hon-Kuan & Su, Y. H., 2014 Jan 1, In : Microwave and Optical Technology Letters. 56, 10, 1 p.Research output: Contribution to journal › Comment/debate
Erratum: Inverse spin Hall effect induced by spin pumping into semiconducting ZnO (Applied Physics Letters (2014) 104 (052401))
Lee, J. C., Huang, L. W., Hung, D. S., Chiang, T. H., Huang, J-C., Liang, J. Z. & Lee, S. F., 2014 May 19, In : Applied Physics Letters. 104, 20, 209903.Research output: Contribution to journal › Comment/debate
Erratum: Study of textured ZnO:Al thin film and its optical properties for thin film silicon solar cells (Journal of Physics and Chemistry of Solids (2012) 73 (52-56))
Lu, W. L., Huang, K. C., Hung, P. K. & Houng, M. P., 2013 Apr 1, In : Journal of Physics and Chemistry of Solids. 74, 4, 1 p.Research output: Contribution to journal › Comment/debate
Erratum: Effect of Ge and Al substitutions on exchange bias in Ni-Mn-Sb alloy (Journal of Applied Physics (2013) 113 (17D712))
Lee, M. K., Xu, L. S., Marchenkov, V. V., Wang, R. L., Chen, R. J., Guo, S., Yang, C. P. & Huang, J. C. A., 2013 May 7, In : Journal of Applied Physics. 113, 17, 179901.Research output: Contribution to journal › Comment/debate
Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))
Verreck, D., Verhulst, A. S., Kao, K. H., Vandenberghe, W. G., De Meyer, K. & Groeseneken, G., 2013 Oct 2, In : IEEE Transactions on Electron Devices. 60, 10, 1 p., 6588911.Research output: Contribution to journal › Comment/debate
Erratum to "ZnO-based MIS photodetectors" [135 (2006) 529-533] (DOI:10.1016/j.sna.2007.06.003)
Young, S. J., Ji, L. W., Chang, S. J., Liang, S. H., Lam, K. T., Fang, T. H., Chen, K. J., Du, X. L. & Xue, Q. K., 2008 Jan 15, In : Sensors and Actuators, A: Physical. 141, 1, 1 p.Research output: Contribution to journal › Comment/debate
ZnO-based MIS photodetectors (DOI:10.1016/j.sna.2007.06.006)
Young, S. J., Ji, L. W., Chang, S. J., Liang, S. H., Lam, K. T., Fang, T. H., Chen, K. J., Du, X. L. & Xue, Q. K., 2008 Jan 15, In : Sensors and Actuators, A: Physical. 141, 1, p. 225-229 5 p.Research output: Contribution to journal › Comment/debate
Erratum: ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts (Journal of the Electrochemical Society (2007) 154 (H26))
Young, S. J., Ji, L. W., Chang, S-J. & Du, X. L., 2007 Mar 16, In : Journal of the Electrochemical Society. 154, 4Research output: Contribution to journal › Comment/debate
Erratum: Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes (Semiconductor Science and Technology (2006) 21 (1507-1511))
Young, J., Ji, W., Chuang, W-K., Chang, J. & Du, L., 2007 Mar 1, In : Semiconductor Science and Technology. 22, 3, 1 p., C01.Research output: Contribution to journal › Comment/debate
Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))
Lee, C. S. & Hsu, W-C., 2005 Aug 22, In : Applied Physics Letters. 87, 8, 089901.Research output: Contribution to journal › Comment/debate
Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)
Lee, C. S. & Hsu, W-C., 2002 Jan 1, In : Superlattices and Microstructures. 32, 2-3, 1 p.Research output: Contribution to journal › Comment/debate
Comparison of droplet combustion models in spray combustion
Jiang, T-L. & Hsu, W-C., 1993 Jan 1, In : Journal of Propulsion and Power. 9, 4, p. 644-646 3 p.Research output: Contribution to journal › Comment/debate
Erratum: "Electronic structures of In1-xGa xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))
Houng, M. & Chang, Y. C., 1989 Dec 1, In : Journal of Applied Physics. 65, 12, p. 4990-4994 5 p.Research output: Contribution to journal › Comment/debate