Master Degree Program on Nano-Integrated-Circuit Engineering

Research Output 1980 2019

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Letter
2012
4 Citations (Scopus)

Effect of copper concentration in the electrolyte on the surface morphology and the microstructure of CuInSe 2 films

Hung, P. K., Kuo, T. W., Huang, K. C., Wang, N. F., Hsieh, P. T. & Houng, M. P., 2012 Jul 1, In : Applied Surface Science. 258, 18, p. 7238-7243 6 p.

Research output: Contribution to journalLetter

Electrolytes
Surface morphology
Copper
Microstructure
Electrodeposition
5 Citations (Scopus)

Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers

Ho, C. S., Lee, C. S., Hsu, W. C., Lin, C. Y., Lai, Y. N. & Wang, C. W., 2012 Jan 1, In : Solid-State Electronics. 76, p. 101-103 3 p.

Research output: Contribution to journalLetter

Photovoltaic cells
photovoltaic cells
Heterojunctions
heterojunctions
insertion
2009
8 Citations (Scopus)

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Liu, Y. J., Yen, C. H., Hsu, C. H., Yu, K. H., Chen, L. Y., Tsai, T. H. & Liu, W-C., 2009 Dec 1, In : Optical Review. 16, 6, p. 575-577 3 p.

Research output: Contribution to journalLetter

indium oxides
tin oxides
light emitting diodes
contact resistance
luminous intensity
2008
18 Citations (Scopus)

Physical parameters extraction from current-voltage characteristic for diodes using multiple nonlinear regression analysis

Liu, C. C., Chen, C. Y., Weng, C. Y., Wang, C. C., Jenq, F. L., Cheng, P. J., Wang, Y. H. & Houng, M. P., 2008 Jun 1, In : Solid-State Electronics. 52, 6, p. 839-843 5 p.

Research output: Contribution to journalLetter

Parameter extraction
Current voltage characteristics
Regression analysis
regression analysis
Diodes
2004
10 Citations (Scopus)

A new InP-InGaAs HBT with a superlattice-collector structure

Chen, J. Y., Guo, D. F., Cheng, S. Y., Lee, K. M., Chen, C. Y., Chuang, H. M., Fu, S. Y. & Liu, W-C., 2004 May 1, In : IEEE Electron Device Letters. 25, 5, p. 244-246 3 p.

Research output: Contribution to journalLetter

Heterojunction bipolar transistors
Electric potential
Valence bands
Electric breakdown
2003
8 Citations (Scopus)

A novel InP/InGaAs TEBT for ultralow current operations

Chen, C. Y., Cheng, S. Y., Chiou, W. H., Chuang, H. M. & Liu, W-C., 2003 Mar 1, In : IEEE Electron Device Letters. 24, 3, p. 126-128 3 p.

Research output: Contribution to journalLetter

Bipolar transistors
Electric potential
Electric breakdown
Electric power utilization
Networks (circuits)
87 Citations (Scopus)

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Chang, S-J., Lee, M. L., Sheu, J-K., Lai, W-C., Su, Y. K., Chang, C. S., Kao, C. J., Chi, G. C. & Tsai, J. M., 2003 Apr 1, In : IEEE Electron Device Letters. 24, 4, p. 212-214 3 p.

Research output: Contribution to journalLetter

Gallium nitride
Photodetectors
Metals
Semiconductor materials
Temperature
57 Citations (Scopus)

Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

Chang, S-J., Chen, C. H., Su, Y. K., Sheu, J-K., Lai, W-C., Tsai, J. M., Liu, C. H. & Chen, S. C., 2003 Mar 1, In : IEEE Electron Device Letters. 24, 3, p. 129-131 3 p.

Research output: Contribution to journalLetter

Light emitting diodes
Etching
Diodes
Optical losses
Electrostatic discharge
37 Citations (Scopus)

InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

Chang, C. S., Chang, S-J., Su, Y. K., Lin, Y-C., Hsu, Y. P., Shei, S. C., Chen, S. C., Liu, C. H. & Liaw, U. H., 2003 Apr 1, In : Semiconductor Science and Technology. 18, 4, p. L21-L23

Research output: Contribution to journalLetter

ITO (semiconductors)
Light emitting diodes
Sputtering
light emitting diodes
sputtering
1 Citation (Scopus)

Proton-exchanged wet etching of recessed-structure SAW filter

Tsai, S. H., Wang, N. F., Houng, M. & Wang, Y-H., 2003 Sep 1, In : IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 50, 9, p. 1219-1222 4 p.

Research output: Contribution to journalLetter

Acoustic surface wave filters
Acoustic surface wave devices
Wet etching
Protons
etching
2 Citations (Scopus)

P-type enhancement-mode SiGe doped-channel field-effect transistor

Lin, Y. M., Wu, S. L., Chang, S-J., Koh, S. & Shiraki, Y., 2003 Dec 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 42, 12 A

Research output: Contribution to journalLetter

Field effect transistors
field effect transistors
augmentation
Doping (additives)
Leakage currents
2002
1 Citation (Scopus)

A novel triple δ-doped GeSi heterostructure field-effect transistor

Lee, C. H., Wu, S. L., Chang, S-J., Miura, A., Koh, S. & Shiraki, Y., 2002 Nov 1, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 11 A

Research output: Contribution to journalLetter

High electron mobility transistors
field effect transistors
Transconductance
Buffer layers
Electric breakdown
9 Citations (Scopus)

A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y-H. & Houng, M., 2002 May 1, In : IEEE Electron Device Letters. 23, 5, p. 237-239 3 p.

Research output: Contribution to journalLetter

Fabrication
Oxidation
Liquids
gallium arsenide
Costs
54 Citations (Scopus)

InGaN/GaN light emitting diodes activated in O2 ambient

Kuo, C. H., Chang, S-J., Su, Y. K., Chen, J-F., Wu, L. W., Sheu, J-K., Chen, C. H. & Chi, G. C., 2002 May 1, In : IEEE Electron Device Letters. 23, 5, p. 240-242 3 p.

Research output: Contribution to journalLetter

Light emitting diodes
Annealing
Epitaxial layers
Chemical activation
Temperature