Projects per year
Personal profile
Education
- 2011 PhD, University of California, Berkeley, USA
Research Interests
- Compact Device Modeling for NCFET
- Compact Device Modeling for the FinFET and UTBSOI MOSFETs
- Hardware Realization of AI Deep Learning
- Nanofabrication of M-I-M Devices for Resistive Memory Applications
- Numerical Simulation of Semiconductor Processes and Devices FinFET (TCAD)
Experience
- 2008/7~2008/9 Engineering Intern, IBM Semiconductor Research and Development Center, New York, USA
- 2010/1~2010/5 Research Intern, IBM Thomas J. Watson Research Lab, New York, USA
- 2011/8~2015/8 Research Scientist, IBM Thomas J. Watson Research Lab, New York, USA
- 2015/8~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University
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Research output
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Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack
Baig, M. A., Le, H. H., De, S., Chang, C. W., Hsieh, C. C., Huang, X. S., Lee, Y. J. & Lu, D. D., 2022 Feb, In: Semiconductor Science and Technology. 37, 2, 024001.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
Chang, S. W., Lu, T. H., Yang, C. Y., Yeh, C. J., Huang, M. K., Meng, C. F., Chen, P. J., Chang, T. H., Chang, Y. S., Jhu, J. W., Hong, T. C., Ke, C. C., Yu, X. R., Lu, W. H., Baig, M. A., Cho, T. C., Sung, P. J., Su, C. J., Hsueh, F. K., Chen, B. Y. & 21 others, , 2022 Apr 1, In: IEEE Transactions on Electron Devices. 69, 4, p. 2101-2107 7 p.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application
Pal, P., Mazumder, S., Huang, C. W., Lu, D. D. & Wang, Y. H., 2022 Mar 22, In: ACS Applied Electronic Materials. 4, 3, p. 1072-1081 10 p.Research output: Contribution to journal › Article › peer-review
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Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
De, S., Baig, M. A., Qiu, B. H., Müller, F., Le, H. H., Lederer, M., Kämpfe, T., Ali, T., Sung, P. J., Su, C. J., Lee, Y. J. & Lu, D. D., 2022 Jan 26, In: Frontiers in Nanotechnology. 3, 826232.Research output: Contribution to journal › Article › peer-review
Open Access -
Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering
De, S., Bu, W. X., Qiu, B. H., Su, C. J., Lee, Y. J. & Lu, D. D., 2021 Apr 19, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 9440091. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
1 Citation (Scopus)