Projects per year
Personal profile
Education
- 2011 PhD, University of California, Berkeley, USA
Research Interests
- Compact Device Modeling for NCFET
- Compact Device Modeling for the FinFET and UTBSOI MOSFETs
- Hardware Realization of AI Deep Learning
- Nanofabrication of M-I-M Devices for Resistive Memory Applications
- Numerical Simulation of Semiconductor Processes and Devices FinFET (TCAD)
Experience
- 2008/7~2008/9 Engineering Intern, IBM Semiconductor Research and Development Center, New York, USA
- 2010/1~2010/5 Research Intern, IBM Thomas J. Watson Research Lab, New York, USA
- 2011/8~2015/8 Research Scientist, IBM Thomas J. Watson Research Lab, New York, USA
- 2015/8~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University
Fingerprint Dive into the research topics where Darsen Lu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 3 Similar Profiles
Transistors
Engineering & Materials Science
Static random access storage
Engineering & Materials Science
Field effect transistors
Engineering & Materials Science
Surface potential
Engineering & Materials Science
Capacitance
Engineering & Materials Science
Circuit simulation
Engineering & Materials Science
field effect transistors
Physics & Astronomy
Doping (additives)
Engineering & Materials Science
Network
Recent external collaboration on country level. Dive into details by clicking on the dots.
Projects 2016 2019
Research Output 2006 2019
Fabrication of omega-gated negative capacitance finfets and SRAM
Sung, P. J., Su, C. J., Lu, D. D., Luo, S. X., Kao, K. H., Ciou, J. Y., Jao, C. Y., Hsu, H. S., Wang, C. J., Hong, T. C., Liao, T. H., Fang, C. C., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Ma, W. C. Y., Huang, K. P. & 6 others, , 2019 Apr, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804663. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Static random access storage
Capacitance
Fabrication
Gases
Annealing
Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs
Chen, S. H., Lian, S. W., Wu, T. R., Chang, T-R., Liou, J. M., Lu, D., Kao, K-H., Chen, N. Y., Lee, W. J. & Tsai, J. H., 2019 Jun 1, In : IEEE Transactions on Electron Devices. 66, 6, p. 2509-2512 4 p., 8704283.Research output: Contribution to journal › Article
Permittivity
Semiconductor materials
Poisson equation
Threshold voltage
Screening
1
Citation
(Scopus)
An FET with a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications
Hsieh, Y. F., Chen, S. H., Chen, N. Y., Lee, W. J., Tsai, J. H., Chen, C. N., Chiang, M-H., Lu, D. & Kao, K-H., 2018 Mar 1, In : IEEE Transactions on Electron Devices. 65, 3, p. 855-859 5 p.Research output: Contribution to journal › Article
Field effect transistors
Threshold voltage
1
Citation
(Scopus)
Emerging NVM circuit techniques and implementations for energy-efficient systems
Khwa, W. S., Lu, D., Dou, C. M. & Chang, M. F., 2018 Jan 1, Beyond-CMOS Technologies for Next Generation Computer Design. Springer International Publishing, p. 85-132 48 p.Research output: Chapter in Book/Report/Conference proceeding › Chapter
Computer systems
Data storage equipment
Networks (circuits)
Phase change memory
Static random access storage
15
Citations
(Scopus)
FinFET with encased air-gap spacers for high-performance and low-energy circuits
Sachid, A. B., Huang, Y. M., Chen, Y. J., Chen, C. C., Lu, D. D., Chen, M. C. & Hu, C., 2017 Jan, In : IEEE Electron Device Letters. 38, 1, p. 16-19 4 p., 7744575.Research output: Contribution to journal › Article
Silicon nitride
Networks (circuits)
Air
Carbon
Tensile stress
Thesis
金屬-絕緣層-金屬 二極體之特性研究
Author: 逸軒, 陳., 2016 Aug 12Supervisor: Lu, D. (Supervisor)
Student thesis: Master's Thesis