Projects per year
Personal profile
Education
- 2011 PhD, University of California, Berkeley, USA
Research Interests
- Compact Device Modeling for NCFET
- Compact Device Modeling for the FinFET and UTBSOI MOSFETs
- Hardware Realization of AI Deep Learning
- Nanofabrication of M-I-M Devices for Resistive Memory Applications
- Numerical Simulation of Semiconductor Processes and Devices FinFET (TCAD)
Experience
- 2008/7~2008/9 Engineering Intern, IBM Semiconductor Research and Development Center, New York, USA
- 2010/1~2010/5 Research Intern, IBM Thomas J. Watson Research Lab, New York, USA
- 2011/8~2015/8 Research Scientist, IBM Thomas J. Watson Research Lab, New York, USA
- 2015/8~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University
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Projects
- 5 Finished
Research output
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Automated extraction of barrier heights for asymmetric MIM tunneling diodes
Lin, W., Lu, D. D., Hong, Y. X. & Hsu, W. C., 2020 Oct, In: Solid-State Electronics. 172, 107879.Research output: Contribution to journal › Article › peer-review
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Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior
Wang, C. W., Ku, H., Chiu, C. Y., De, S., Qiu, B. H., Shin, C. & Lu, D., 2020 May, In: Semiconductor Science and Technology. 35, 5, 055033.Research output: Contribution to journal › Article › peer-review
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Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks
Lu, D. D., De, S., Baig, M. A., Qiu, B. H. & Lee, Y. J., 2020 Sep, In: Semiconductor Science and Technology. 35, 9, 095007.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter
Sung, P. J., Su, C. J., Lo, S. H., Hsueh, F. K., Lu, D. D., Lee, Y. J. & Chao, T. S., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 474-480 7 p., 9063644.Research output: Contribution to journal › Article › peer-review
Open Access -
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K
De, S., Baig, M. A., Qiu, B. H., Lu, D., Sung, P. J., Hsueh, F. K., Lee, Y. J. & Su, C. J., 2020 Jun, 2020 Device Research Conference, DRC 2020. Institute of Electrical and Electronics Engineers Inc., 9135186. (Device Research Conference - Conference Digest, DRC; vol. 2020-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus)