Projects per year
Personal profile
Education
- 2011 PhD, University of California, Berkeley, USA
Research Interests
- Compact Device Modeling for NCFET
- Compact Device Modeling for the FinFET and UTBSOI MOSFETs
- Hardware Realization of AI Deep Learning
- Nanofabrication of M-I-M Devices for Resistive Memory Applications
- Numerical Simulation of Semiconductor Processes and Devices FinFET (TCAD)
Experience
- 2008/7~2008/9 Engineering Intern, IBM Semiconductor Research and Development Center, New York, USA
- 2010/1~2010/5 Research Intern, IBM Thomas J. Watson Research Lab, New York, USA
- 2011/8~2015/8 Research Scientist, IBM Thomas J. Watson Research Lab, New York, USA
- 2015/8~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University
Fingerprint
Dive into the research topics where Darsen Lu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Network
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 9 Finished
-
3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM
Baig, M. A., Yeh, C. J., Chang, S. W., Qiu, B. H., Huang, X. S., Tsai, C. H., Chang, Y. M., Sung, P. J., Su, C. J., Cho, T. C., De, S., Lu, D., Lee, Y. J., Lee, W. H., Wu, W. F. & Yeh, W. K., 2023, In: IEEE Journal of the Electron Devices Society. 11, p. 107-113 7 p.Research output: Contribution to journal › Article › peer-review
Open Access -
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET
Chang, S. W., Chou, J. H., Lee, W. H., Lee, Y. J. & Lu, D. D., 2023 Mar, In: Solid-State Electronics. 201, 108585.Research output: Contribution to journal › Article › peer-review
-
Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack
Baig, M. A., Le, H. H., De, S., Chang, C. W., Hsieh, C. C., Huang, X. S., Lee, Y. J. & Lu, D. D., 2022 Feb, In: Semiconductor Science and Technology. 37, 2, 024001.Research output: Contribution to journal › Article › peer-review
3 Citations (Scopus) -
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
Chang, S. W., Lu, T. H., Yang, C. Y., Yeh, C. J., Huang, M. K., Meng, C. F., Chen, P. J., Chang, T. H., Chang, Y. S., Jhu, J. W., Hong, T. C., Ke, C. C., Yu, X. R., Lu, W. H., Baig, M. A., Cho, T. C., Sung, P. J., Su, C. J., Hsueh, F. K., Chen, B. Y., & 21 others, 2022 Apr 1, In: IEEE Transactions on Electron Devices. 69, 4, p. 2101-2107 7 p.Research output: Contribution to journal › Article › peer-review
5 Citations (Scopus) -
First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes
Yang, C. Y., Sung, P. J., Chuang, M. H., Chang, C. W., Shih, Y. J., Huang, T. Y., Lu, D. D., Hong, T. C., Yu, X. R., Lu, W. H., Chang, S. W., Tsai, J. J., Huang, M. K., Cho, T. C., Lee, Y. J., Luo, K. L., Wu, C. T., Su, C. J., Kao, K. H., Chao, T. S., & 2 others, 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2021-2024 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution