Projects per year
Personal profile
Education
- 2011 PhD, University of California, Berkeley, USA
Research Interests
- Compact Device Modeling for NCFET
- Compact Device Modeling for the FinFET and UTBSOI MOSFETs
- Hardware Realization of AI Deep Learning
- Nanofabrication of M-I-M Devices for Resistive Memory Applications
- Numerical Simulation of Semiconductor Processes and Devices FinFET (TCAD)
Experience
- 2008/7~2008/9 Engineering Intern, IBM Semiconductor Research and Development Center, New York, USA
- 2010/1~2010/5 Research Intern, IBM Thomas J. Watson Research Lab, New York, USA
- 2011/8~2015/8 Research Scientist, IBM Thomas J. Watson Research Lab, New York, USA
- 2015/8~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University
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Projects
- 9 Finished
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3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM
Baig, M. A., Yeh, C. J., Chang, S. W., Qiu, B. H., Huang, X. S., Tsai, C. H., Chang, Y. M., Sung, P. J., Su, C. J., Cho, T. C., De, S., Lu, D., Lee, Y. J., Lee, W. H., Wu, W. F. & Yeh, W. K., 2023, In: IEEE Journal of the Electron Devices Society. 11, p. 107-113 7 p.Research output: Contribution to journal › Article › peer-review
Open Access2 Citations (Scopus) -
Bilayered Oxide Heterostructure-Mediated Capacitance-Based Neuroplasticity Modulation for Neuromorphic Classification
Lin, P. E., Chen, K. T., Chaurasiya, R., Le, H. H., Cheng, C. H., Lu, D. D. & Chen, J. S., 2023 Dec 22, In: Advanced Functional Materials. 33, 52, 2307961.Research output: Contribution to journal › Article › peer-review
6 Citations (Scopus) -
Computing-in-Memory with Ferroelectric Materials and Beyond
Lu, D. D., 2023, 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure
Yu, X. R., Hsieh, C. C., Chuang, M. H., Chiu, M. Y., Sun, T. C., Geng, W. Z., Chang, W. H., Shih, Y. J., Lu, W. H., Chang, W. C., Lin, Y. C., Pai, Y. C., Lai, C. Y., Chuang, M. H., Dei, Y., Yang, C. Y., Lu, H. Y., Lin, N. C., Wu, C. T., Kao, K. H., & 9 others, 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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HfTaOx Rectifying Layer for HfO x-Based RRAM for High-Accuracy Neuromorphic Computing Applications
Chang, T. J., Le, H. H., Li, C. Y., Chu, S. Y. & Lu, D. D., 2023 May 23, In: ACS Applied Electronic Materials. 5, 5, p. 2566-2573 8 p.Research output: Contribution to journal › Article › peer-review
2 Citations (Scopus)