Jen-Sue Chen

Professor

Phone866 6 2757575 ext 62948
Emailjenschen@mail.ncku.edu.tw
Websitehttp://www.mse.ncku.edu.tw/index.php?option=module&lang=cht&task=pageinfo&id=233&index=11

2855 Citations
29 h-Index

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Personal profile

Education

PhD, California Institute of Technology

Research Interests

Charge Trapping Memory
Impedance Spectroscopy on Electronic Devices
Light Gating Transistors
Resistance Switching RAMs
Thin Film Transistors

Experience

1995/10 ~ 1996/08 Associate Professor, National Changhua University of Education
1996/08 ~ 2002/07 Associate Professor, National Cheng Kung University
2002/08 ~ present Professor, National Cheng Kung University

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Network Recent external collaboration on country level. Dive into details by clicking on the dots.

電光雙閘調控場效式薄膜光電晶體之製作與光感測研究

Chen, J.

17-08-01 → 18-07-31

Project: Research project

電荷擷取與電阻轉換複合調控四極式多重位元記憶體研發

Chen, J.

17-08-01 → 18-07-31

Project: Research project

金屬型及氧空缺型雙重導電路徑之低耗能電阻式記憶體研究

Chen, J.

16-08-01 → 17-07-31

Project: Research project

金屬型及氧空缺型雙重導電路徑之低耗能電阻式記憶體研究

Chen, J.

15-08-01 → 16-07-31

Project: Research project

薄膜電晶體型電荷擷取式記憶體之研發與機制研究

Chen, J.

15-08-01 → 16-07-31

Project: Research project

Research Output 1991 2018

2855 Citations
29 h-Index
142 Article
16 Patent
8 Conference article
6 Conference contribution
3 More

Effects of interfacial tension and molecular dipole moment on the electrical characteristics of low-voltage-driven organic electronic devices

Wu, F. C., Yeh, B. L., Chou, T. H., Chen, J. S., Cheng, H. L. & Chou, W. Y., 2018 Aug 1, In : Organic Electronics. 59, p. 374-381 8 p.

Research output: Contribution to journal › Article

Dipole moment

Buffer layers

low voltage

Surface tension

interfacial tension

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Chiang, Y. C., Hsiao, Y. H., Li, J. T. & Chen, J. S., 2018 Feb 1, In : AIP Advances. 8, 2, 025319.

Research output: Contribution to journal › Article

electrical measurement

transistors

capacitance

trapping

oxygen

1 Citation (Scopus)

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO₂ area ratio

Li, J. T., Tsai, H. L., Lai, W. Y., Hwang, W. S., Chen, I-G. & Chen, J-S., 2018 Apr 30, In : Applied Physics Letters. 112, 18, 183502.

Research output: Contribution to journal › Article

zinc oxides

tin oxides

leakage

conduction bands

transistors

Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

Wu, F. C., Yeh, B. L., Chou, T. H., Chen, J. S., Tsai, M. R., Cheng, H. L. & Chou, W. Y., 2017 Aug 8, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 183-186 4 p. 8006115. (AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thin film transistors

Polyimides

Hafnium

Surface tension

Permittivity