Engineering
Light-Emitting Diode
91%
Nitride
24%
Quantum Well
24%
Photometer
21%
Output Power
19%
Low-Temperature
17%
Sapphire Substrate
16%
Ohmic Contacts
13%
Superlattice
12%
Cap Layer
12%
Heterojunctions
12%
Schottky Barrier
12%
Indium-Tin-Oxide
12%
Epitaxial Film
9%
Solar Cell
9%
Responsivity
9%
Tunnel Construction
8%
Plastic Optical Fibers
8%
Fiber-Optic Communication
8%
Blue Light
8%
Photocurrent
8%
Current Injection
8%
Reverse Bias
7%
Photodiode
7%
Hydrogen Generation
6%
Metal Contact
6%
Ultraviolet Light
6%
Light Output
6%
Light Output Power
6%
Forward Voltage
6%
Photodetector
5%
Electrostatic Discharge
5%
Magnetron
5%
Band Gap
5%
Side Wall
5%
Modulation Speed
5%
Material Science
Light-Emitting Diode
100%
Surface (Surface Science)
28%
Film
28%
Sapphire
22%
Nitride Compound
20%
Indium Tin Oxide
17%
ZnO
17%
Quantum Well
17%
Gallium Nitride
17%
Heterojunction
17%
Photosensor
17%
Superlattice
16%
Annealing
14%
Epitaxial Film
9%
Density
9%
Electrical Resistivity
9%
Schottky Barrier
8%
Oxide Compound
8%
Contact Resistance
7%
Solar Cell
6%
Plastic Optical Fiber
6%
Photoluminescence
6%
Magnetron Sputtering
5%
Chemical Vapor Deposition
5%
Thin Films
5%
Gallium
5%
Electroluminescence
5%
Fiber-Optic Communication
5%
Carrier Concentration
5%
Keyphrases
Indium Gallium Nitride (InGaN)
36%
Light-emitting Diodes
33%
GaN-based
17%
GaN-based Light-emitting Diodes
15%
Multiple Quantum Wells
15%
Power Output
13%
Nitrides
12%
Aluminum Gallium Nitride (AlGaN)
12%
Low Temperature
11%
P-GaN
10%
N-GaN
10%
Green Light-emitting Diodes
9%
Gallium Nitride
9%
Contact Layer
8%
Indium Tin Oxide
7%
Short-period Superlattice
7%
GaN Layers
7%
Ohmic Contact
6%
Blue Light-emitting Diodes
6%
P-type
6%
Plastic Optical Fiber Communication
6%
AlGaN-GaN
6%
Light Output
5%
Sapphire Substrate
5%
GaN Cap Layer
5%
Dark Current
5%
Patterned Sapphire Substrate
5%
