Projects per year
Personal profile
Education
- 1998 PhD, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley
Research Interests
- Semiconductor Devices
- Semiconductor Physics
- 元件可靠度
Experience
- 1999~2003 Assistant Professor Department of Electrical Engineering National Cheng Kung University
- 2003~2008 Associate Professor, Department of Electrical Engineering, National Cheng Kung University
- 2008~ present Professor, Department of Electrical Engineering, National Cheng Kung University
- 2011~2014 Director, Institute of Microelectronics, National Cheng Kung University
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Projects
- 22 Finished
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Investigating the Photodetectors and pH Sensors of Two-Dimensional MoS2with Different Substrates
Chang, S. P., Chen, T. H., Liou, G. Y., Huang, W. L., Lai, W. C., Chang, S. J. & Chen, J. F., 2021, In: ECS Journal of Solid State Science and Technology. 10, 5, 055015.Research output: Contribution to journal › Article › peer-review
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Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET with Low-Permittivity Inner Spacers
Wu, Y. T., Chiang, M. H., Chen, J. F. & Liu, T. J. K., 2021 Nov 1, In: IEEE Transactions on Electron Devices. 68, 11, p. 5529-5534 6 p.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Simulation-based study of high-density SRAM voltage scaling enabled by inserted-oxide FinFET technology
Wu, Y. T., Ding, F., Connelly, D., Chiang, M. H., Chen, J. F. & Liu, T. J. K., 2019 Apr, In: IEEE Transactions on Electron Devices. 66, 4, p. 1754-1759 6 p., 8661752.Research output: Contribution to journal › Article › peer-review
3 Citations (Scopus) -
Characteristics and reliability of metal-oxide-semiconductor transistors with various depths of plasma-induced Si recess structure
Chen, J. F., Tsai, Y. L., Chen, C. Y., Hsu, H. T., Kao, C. Y. & Hwang, H. P., 2018 Apr, In: Japanese journal of applied physics. 57, 4, 04FD01.Research output: Contribution to journal › Article › peer-review
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High-density SRAM voltage scaling enabled by inserted-oxide FinFET technology
Wu, Y. T., Chiang, M. H., Chen, J. F., Ding, F., Connelly, D. & Liu, T. J. K., 2018 Mar 7, 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-3 3 p. (2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017; vol. 2018-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus)