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2019

Simulation-based study of high-density SRAM voltage scaling enabled by inserted-oxide FinFET technology

Wu, Y. T., Ding, F., Connelly, D., Chiang, M. H., Chen, J. F. & Liu, T. J. K., 2019 Apr, In : IEEE Transactions on Electron Devices. 66, 4, p. 1754-1759 6 p., 8661752.

Research output: Contribution to journalArticle

2018

Characteristics and reliability of metal-oxide-semiconductor transistors with various depths of plasma-induced Si recess structure

Chen, J-F., Tsai, Y. L., Chen, C. Y., Hsu, H. T., Kao, C. Y. & Hwang, H. P., 2018 Apr 1, In : Japanese Journal of Applied Physics. 57, 4, 04FD01.

Research output: Contribution to journalArticle

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Tsai, Y. L., Chen, J. F., Shen, S. F., Hsu, H. T., Kao, C. Y., Chang, K. F. & Hwang, H. P., 2018 Nov 13, In : Semiconductor Science and Technology. 33, 12, 125019.

Research output: Contribution to journalArticle

2017

Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology

Wu, Y. T., Ding, F., Connelly, D., Zheng, P., Chiang, M. H., Chen, J. F. & Liu, T. J. K., 2017 Oct, In : IEEE Transactions on Electron Devices. 64, 10, p. 4193-4199 7 p., 8010312.

Research output: Contribution to journalArticle

12 Citations (Scopus)
2016

Analysis of high-voltage metal-oxide-semiconductor transistors with gradual junction in the drift region

Chen, J-F., Ai, T. J., Tsai, Y. L., Hsu, H. T., Chen, C. Y. & Hwang, H. P., 2016 Jan 1, In : Japanese Journal of Applied Physics. 55, 8S2, 08PD04.

Research output: Contribution to journalArticle

Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

Chen, J. F. & Feng, Y. S., 2016 Aug 18, In : Electronics Letters. 52, 17, p. 1488-1490 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors

Chen, J. F., Chang, C. P., Liu, Y. M., Tsai, Y. L., Hsu, H. T., Chen, C. Y. & Hwang, H. P., 2016 Jan, In : Japanese Journal of Applied Physics. 55, 1, 01AD03.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2015

Impact of uniaxial strain on random telegraph noise in high-k/metal gate pMOSFETs

Huang, P. C., Chen, J. F., Tsai, S. C., Wu, S. L., Tsai, K. S., Kao, T. H., Fang, Y. K., Lai, C. M., Hsu, C. W., Chen, Y. W. & Cheng, O., 2015 Mar, In : IEEE Transactions on Electron Devices. 62, 3, p. 988-993 6 p., 7031365.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2014

Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain

Tsai, S. C., Wu, S. L., Chen, J. F., Wang, B. C., Huang, P. C., Tsai, K. S., Kao, T. H., Yang, C. W., Chen, C. G., Lo, K. Y., Cheng, O. & Fang, Y. K., 2014, In : Journal of Nanomaterials. 2014, 787132.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

Tsai, S. C., Wu, S. L., Huang, P. C., Wang, B. C., Tsai, K. S., Kao, T. H., Yang, C. W., Chen, C. G., Cheng, O., Fang, Y. K., Chang, S. J. & Chen, J. F., 2014 Aug, In : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 1, 08LB03.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Two-stage hot-carrier-induced degradation of p-type LDMOS transistors

Chen, J-F., Chen, T. H. & Ai, D. R., 2014 Nov 6, In : Electronics Letters. 50, 23, p. 1751-1753 3 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2013

Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Yan, C. R., Chen, J. F., Lin, C. Y., Hsu, H. T., Liao, Y. J., Yang, M. T., Chen, C. Y., Lin, Y. C. & Chen, H. H., 2013 Apr 1, In : Japanese journal of applied physics. 52, 4 PART 2, 04CC07.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Yan, C. R., Chen, J. F., Lee, Y. J., Huang, W. S., Huang, M. J., Chen, C. Y., Lin, Y. C., Chang, K. F. & Chen, H. H., 2013 Nov 1, In : Japanese journal of applied physics. 52, 11 PART 2, 11NA06.

Research output: Contribution to journalArticle

Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

Wang, B. C., Wu, S. L., Lu, Y. Y., Chang, S-J., Chen, J-F., Tsai, S. C., Hsu, C. H., Yang, C. W., Chen, C. G., Cheng, O. & Huang, P. C., 2013 Jan 4, In : IEEE Electron Device Letters. 34, 2, p. 151-153 3 p., 6392853.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Effect of annealing process on trap properties in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors through low-frequency noise and random telegraph noise characterization

Chiu, H. F., Wu, S. L., Chang, Y. S., Chang, S. J., Huang, P. C., Chen, J. F., Tsai, S. C., Lai, C. M., Hsu, C. W. & Cheng, O., 2013 Apr 1, In : Japanese journal of applied physics. 52, 4 PART 2, 04CC22.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Extraction and Analysis of Interface States in 50-nm nand Flash Devices

Yan, C. R., Chen, J. F., Lee, Y. J., Liao, Y. J., Lin, C. Y., Chen, C. Y., Lin, Y. C. & Chen, H. H., 2013 Mar 11, In : IEEE Transactions on Electron Devices. 60, 3, p. 992-997 6 p., 6461087.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Low-frequency noise characteristics for various ZrO2-added HfO2-based 28-nm High-k/metal-gate nMOSFETs

Tsai, S. C., Wu, S. L., Wang, B. C., Chang, S. J., Hsu, C. H., Yang, C. W., Lai, C. M., Hsu, C. W., Cheng, O., Huang, P. C. & Chen, J. F., 2013 Jul 17, In : IEEE Electron Device Letters. 34, 7, p. 834-836 3 p., 6525388.

Research output: Contribution to journalArticle

12 Citations (Scopus)
2012

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Feng Chiu, H., Lein Wu, S., Shyi Chang, Y., Jinn Chang, S., Fang Chen, J., Chang Tsai, S., Hua Hsu, C., Ming Lai, C., Wei Hsu, C. & Cheng, O., 2012 Sep 17, In : Applied Physics Letters. 101, 12, 122105.

Research output: Contribution to journalArticle

11 Citations (Scopus)
2011

Analysis of GIDL-induced off-state breakdown in high-voltage depletion-mode nMOSFETs

Chen, J. F., Yan, C. R., Lin, Y. C., Fan, J. J., Yang, S. F. & Shih, W. C., 2011 Jun 1, In : IEEE Transactions on Electron Devices. 58, 6, p. 1608-1613 6 p., 5742996.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Characteristics of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation substrate using amorphization/templated recrystallization (ATR) method

Huang, P. C., Wu, S. L., Chang, S. J., Huang, Y. T., Chen, J. F., Lin, C. T., Ma, M. & Cheng, O., 2011 Jun 1, In : IEEE Transactions on Electron Devices. 58, 6, p. 1635-1642 8 p., 5742995.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Grain-orientation induced quantum confinement variation in FinFETs and multi-gate ultra-thin body CMOS devices and implications for digital design

Rasouli, S. H., Endo, K., Chen, J. F., Singh, N. & Banerjee, K., 2011 Aug 1, In : IEEE Transactions on Electron Devices. 58, 8, p. 2282-2292 11 p., 5934397.

Research output: Contribution to journalArticle

11 Citations (Scopus)
2010

Improved poly gate engineering for 65 nm low power CMOS technology

Hu, C. Y., Chen, J-F., Chen, S. C., Chang, S-J., Lee, C. P. & Lee, T. H., 2010 Jan 1, In : Journal of the Electrochemical Society. 157, 1

Research output: Contribution to journalArticle

Improvement of poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology

Hu, C. Y., Chen, J. F., Chen, S. C., Chang, S. J., Lee, K. M. & Lee, C. P., 2010 Apr 1, In : IEEE Transactions on Electron Devices. 57, 4, p. 956-959 4 p., 5418971.

Research output: Contribution to journalArticle

2 Citations (Scopus)

The direct evidence of substrate potential propagation in a gate-grounded NMOS

Yang, D. H., Chen, J-F., Wu, K. M., Shih, J. R. & Lee, J. H., 2010 Jul 1, In : Solid-State Electronics. 54, 7, p. 728-731 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology

Hu, C. Y., Chen, J. F., Chen, S. C., Chang, S. J., Lee, K. M. & Lee, C. P., 2010 May 1, In : Solid-State Electronics. 54, 5, p. 564-567 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2009

An investigation on anomalous hot-carrier-induced on-resistance reduction in n-type LDMOS transistors

Chen, J. F., Tian, K. S., Chen, S. Y., Wu, K. M., Shih, J. R. & Wu, K., 2009 Sep 1, In : IEEE Transactions on Device and Materials Reliability. 9, 3, p. 459-464 6 p., 5089423.

Research output: Contribution to journalArticle

25 Citations (Scopus)

Convergence of hot-carrier-induced saturation region drain current and on-resistance degradation in drain extended MOS transistors

Chen, J-F., Chen, S. Y., Wu, K. M., Shih, J. R. & Wu, K., 2009 Sep 22, In : IEEE Transactions on Electron Devices. 56, 11, p. 2843-2847 5 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors

Chen, J-F., Chen, S. Y., Wu, K. M. & Liu, C. M., 2009 Apr 1, In : Japanese Journal of Applied Physics. 48, 4 PART 2, 04C039.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Mechanism and modeling of on-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors

Chen, J. F., Tian, K. S., Chen, S. Y., Wu, K. M. & Liu, C. M., 2009 Apr 1, In : Japanese journal of applied physics. 48, 4 PART 2, 04C040.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage p-type LDMOS transistors

Chen, J. F., Tian, K. S., Chen, S. Y., Wu, K. M., Shih, J. R. & Wu, K., 2009 Dec 1, In : IEEE Transactions on Electron Devices. 56, 12, p. 3203-3206 4 p., 5280275.

Research output: Contribution to journalArticle

17 Citations (Scopus)
2008

An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Tian, K. S., Chen, J-F., Chen, S. Y., Wu, K. M., Lee, J. R., Huang, T. Y., Liu, C. M. & Hsu, S. L., 2008 Apr 25, In : Japanese Journal of Applied Physics. 47, 4 PART 2, p. 2641-2644 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors

Chen, S. Y., Chen, J. F., Lee, J. R., Wu, K. M. K. M., Liu, C. M. & Hsu, S. L., 2008 May 1, In : IEEE Transactions on Electron Devices. 55, 5, p. 1137-1142 6 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Anomalous increase in hot-carrier-induced threshold voltage shift in n -type drain extended metal-oxide-semiconductor transistors

Chen, J. F., Chen, S. Y., Lee, J. R., Wu, K. M., Huang, T. Y. & Liu, C. M., 2008 Mar 28, In : Applied Physics Letters. 92, 11, 113509.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

Chen, J. F., Chen, S. Y., Wu, K. M. & Liu, C. M., 2008 Dec 12, In : Applied Physics Letters. 93, 22, 223504.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Dynamic turn-on mechanism of the n-MOSFET under high-current stress

Yang, D. H., Chen, J-F., Lee, J. H. & Wu, K. M., 2008 Aug 1, In : IEEE Electron Device Letters. 29, 8, p. 895-897 3 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors

Chen, J-F., Lee, J. R., Wu, K. M., Huang, T. Y. & Liu, C. M., 2008 Jul 1, In : IEEE Electron Device Letters. 29, 7, p. 771-774 4 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Effect of gate voltage on hot-carrier-induced on-resistance degradation in high-voltage n-type lateral diffused metal-oxide-semiconductor transistors

Chen, S. Y., Chen, J-F., Wu, K. M., Lee, J. R., Liu, C. M. & Hsu, S. L., 2008 Apr 25, In : Japanese Journal of Applied Physics. 47, 4 PART 2, p. 2645-2649 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
5 Citations (Scopus)

Effects of surface cleaning on stressvoiding and electromigration of Cu-damascene interconnection

Wang, J. P., Su, Y. K. & Chen, J. F., 2008 Mar 1, In : IEEE Transactions on Device and Materials Reliability. 8, 1, p. 210-215 6 p., 4384326.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Gate current dependent hot-carrier-induced degradation in LDMOS transistors

Chen, J. F., Tian, K. S., Chen, S. Y., Lee, J. R., Wu, K. M., Huang, T. Y. & Liu, C. M., 2008 Aug 15, In : Electronics Letters. 44, 16

Research output: Contribution to journalArticle

8 Citations (Scopus)

Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors

Chen, J-F., Lee, J. R., Wu, K. M., Huang, T. Y. & Liu, C. M., 2008 Aug 18, In : IEEE Transactions on Electron Devices. 55, 8, p. 2259-2262 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Chen, J. F., Tian, K. S., Chen, S. Y., Lee, J. R., Wu, K. M. & Liu, C. M., 2008 Jun 30, In : Applied Physics Letters. 92, 24, 243501.

Research output: Contribution to journalArticle

7 Citations (Scopus)

On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

Chen, J. F., Tian, K. S., Chen, S. Y., Wu, K. M. & Liu, C. M., 2008 Sep 5, In : IEEE Electron Device Letters. 29, 9, p. 1071-1073 3 p.

Research output: Contribution to journalArticle

66 Citations (Scopus)
2007
4 Citations (Scopus)

OFF-state avalanche-breakdown-induced ON-resistance degradation in lateral DMOS transistors

Chen, J. F., Lee, J. R., Wu, K. M., Huang, T. Y., Liu, C. M. & Hsu, S. L., 2007 Nov 1, In : IEEE Electron Device Letters. 28, 11, p. 1033-1035 3 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

The optimized geometry of the SiGe HBT power cell for 802.11a WLAN applications

Lin, C. H., Su, Y. K., Juang, Y. Z., Chiu, C. F., Chang, S. J., Chen, J. F. & Tu, C. H., 2007 Jan 1, In : IEEE Microwave and Wireless Components Letters. 17, 1, p. 49-51 3 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers

Hu, C. Y., Chen, S. C., Chen, J. F., Chang, S. J., Wang, M. H., Yeh, V. & Chen, J. C., 2007 Aug 7, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 4, p. 1298-1304 7 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2006

Anomalous reduction of hot-carrier-induced ON-resistance degradation in n-type DEMOS transistors

Wu, K. M., Chen, J-F., Su, Y. K., Lee, J. R., Lin, Y-C., Hsu, S. L. & Shih, J. R., 2006 Sep 1, In : IEEE Transactions on Device and Materials Reliability. 6, 3, p. 371-376 6 p., 1717485.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Device enhancement using process-strained-Si for sub-100-nm nMOSFET

Wang, J. P., Su, Y. K. & Chen, J-F., 2006 May 1, In : IEEE Transactions on Electron Devices. 53, 5, p. 1276-1279 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)