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Research Output

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Conference article
2003

Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage

Chen, J-F., Tsao, C. P. & Ong, T. C., 2003 Sep 1, In : Biennial University/Government/Industry Microelectronics Symposium - Proceedings. p. 230-233 4 p.

Research output: Contribution to journalConference article

1998

Performance and reliability of asymmetric LDD devices and logic gates

Chen, J-F., Tao, J., Fang, P. & Hu, C., 1998 Jan 1, In : Proceedings of the Custom Integrated Circuits Conference. p. 533-536 4 p.

Research output: Contribution to journalConference article

PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology

Maiti, B., Tobin, P. J., Hobbs, C., Hegde, R. I., Huang, F., O'Meara, D. L., Jovanovic, D., Mendicino, M., Chen, J., Connelly, D., Adetutu, O., Mogab, J., Candelaria, J. & La, L. B., 1998 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 781-784 4 p.

Research output: Contribution to journalConference article

35 Citations (Scopus)
1996

Electromigration design rules for bidirectional current

Tao, J., Chen, J. F., Cheung, N. W. & Hu, C., 1996 Jan 1, In : Annual Proceedings - Reliability Physics (Symposium). p. 180-187 8 p.

Research output: Contribution to journalConference article

12 Citations (Scopus)
1995

Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Chen, J-F., McGaughy, B. W. & Hu, C., 1995 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 29-32 4 p.

Research output: Contribution to journalConference article

3 Citations (Scopus)