Kuang-I Lin

Project Assistant Research Fellow

  • 662 Citations
  • 10 h-Index
20032018
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Research Output 2003 2018

  • 662 Citations
  • 10 h-Index
  • 34 Article
  • 5 Conference contribution
  • 2 Conference article
2018
10 Citations (Scopus)

Atom-Dependent Edge-Enhanced Second-Harmonic Generation on MoS2 Monolayers

Lin, K-I., Ho, Y. H., Liu, S. B., Ciou, J. J., Huang, B. T., Chen, C., Chang, H. C., Tu, C. L. & Chen, C. H., 2018 Feb 14, In : Nano letters. 18, 2, p. 793-797 5 p.

Research output: Contribution to journalArticle

Harmonic generation
Monolayers
harmonic generations
Atoms
atoms
9 Citations (Scopus)

Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

Chang, H. C., Tu, C. L., Lin, K. I., Pu, J., Takenobu, T., Hsiao, C. N. & Chen, C. H., 2018 Sep 27, In : Small. 14, 39, 1802351.

Research output: Contribution to journalArticle

Open Access
Indium
Chemical vapor deposition
Monolayers
Graphite
Electron mobility
2017
2 Citations (Scopus)

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Wang, H. C., Chen, M. C., Lin, Y. S., Lu, M. Y., Lin, K. I. & Cheng, Y. C., 2017 Dec 1, In : Nanoscale Research Letters. 12, 591.

Research output: Contribution to journalArticle

Open Access
Silicon
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
Doping (additives)

Partially polycrystalline GaN1-xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap

Wu, H. M., Lin, K-I., Liu, Y. X., Lin, H. H. & Cheng, Y. C., 2017 Aug 1, In : Japanese Journal of Applied Physics. 56, 8, 081202.

Research output: Contribution to journalArticle

Energy gap
Chemical analysis
Diffraction
Crystalline materials
Ternary alloys
2016
8 Citations (Scopus)

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films

Lin, K. I., Chen, Y. J., Wang, B. Y., Cheng, Y. C. & Chen, C. H., 2016 Mar 21, In : Journal of Applied Physics. 119, 11, 115703.

Research output: Contribution to journalArticle

excitons
vapor deposition
photoluminescence
molybdenum disulfides
room temperature

Structure of GaAsN alloy within miscibility gap

Wu, H. M., Lin, K-I. & Lin, H. H., 2016 Aug 12, 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 7543310. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Solubility
Energy gap
Substrates
Molecular beam epitaxy
Electron diffraction
2 Citations (Scopus)

The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs

Chen, M. C., Cheng, Y. C., Huang, C. Y., Wang, H. C., Lin, K-I. & Yang, Z. P., 2016 Sep 1, In : Journal of Luminescence. 177, p. 59-64 6 p.

Research output: Contribution to journalArticle

Silicon
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
Doping (additives)
2015
2 Citations (Scopus)

Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy

Lin, K. I., Chen, Y. J., Cheng, Y. C. & Gwo, S., 2015 Mar 1, In : Japanese Journal of Applied Physics. 54, 3, 031001.

Research output: Contribution to journalArticle

Valence bands
Spectroscopy
valence
Organic chemicals
Molecular beam epitaxy
24 Citations (Scopus)

Synthesis of graphene oxide dots for excitation-wavelength independent photoluminescence at high quantum yields

Teng, C. Y., Yeh, T. F., Lin, K. I., Chen, S. J., Yoshimura, M. & Teng, H., 2015 May 7, In : Journal of Materials Chemistry C. 3, 17, p. 4553-4562 10 p.

Research output: Contribution to journalArticle

Graphite
Quantum yield
Oxides
Graphene
Photoluminescence
2013
9 Citations (Scopus)

Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation

Lin, K. I., Lin, K. L., Wang, B. W., Lin, H. H. & Hwang, J. S., 2013 Dec 1, In : Applied Physics Express. 6, 12, 121202.

Research output: Contribution to journalArticle

Antimony
Valence bands
antimony
Solar cells
Nitrogen
2011
3 Citations (Scopus)

Photoreflectance study of InN films with In and N polarities

Lin, K-I., Tsai, J. T., Su, I. C., Hwang, J. S. & Gwo, S., 2011 Nov 1, In : Applied Physics Express. 4, 11, 112601.

Research output: Contribution to journalArticle

polarity
oscillations
Electric fields
electric fields
Molecular beam epitaxy
2010
3 Citations (Scopus)

Terahertz radiation by spontaneous polarization fields in InN

Lin, K. I., Tsai, J. T., Hwang, J. S. & Chen, M. C., 2010 Sep 1, In : Physica E: Low-Dimensional Systems and Nanostructures. 42, 10, p. 2669-2672 4 p.

Research output: Contribution to journalArticle

Polarization
Epilayers
Radiation
polarization
radiation
4 Citations (Scopus)

Terahertz radiation mechanism of native n-type InN with different carrier concentrations

Hwang, J. S., Tsai, J. T., Lin, K-I., Lee, M. H., Tsai, C. N., Lin, H. W., Gwo, S. & Chen, M. C., 2010 Oct 1, In : Applied Physics Express. 3, 10, 102202.

Research output: Contribution to journalArticle

Carrier concentration
Radiation
polarity
Electrons
radiation
2009
2 Citations (Scopus)

Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

Lin, K. I., Lin, H. C., Tsai, J. T., Cheng, C. S., Lu, Y. T., Hwang, J. S., Chiu, P. C., Chen, S. H., Chyi, J. I. & Wang, T. S., 2009 Oct 19, In : Applied Physics Letters. 95, 14, 141914.

Research output: Contribution to journalArticle

Fermi surfaces
transport theory
thermionic emission
conduction bands
etching
2008
3 Citations (Scopus)

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

Lin, K-I., Lin, H. C., Wang, T. S., Lee, M. H. & Hwang, J. S., 2008 Dec 1, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 2, p. 449-453 5 p.

Research output: Contribution to journalConference article

nitrides
conduction bands
photoluminescence
temperature
interactions
17 Citations (Scopus)

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Wang, T. S., Tsai, J. T., Lin, K-I., Hwang, J. S., Lin, H. H. & Chou, L. C., 2008 Feb 15, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 147, 2-3, p. 131-135 5 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Heterojunctions
heterojunctions
Energy gap
alignment
12 Citations (Scopus)

Drift current dominated terahertz radiation from InN at low-density excitation

Lin, K-I., Tsai, J. T., Wang, T. S., Hwang, J. S., Chen, M. C. & Chi, G. C., 2008 Dec 1, In : Applied Physics Letters. 93, 26, 262102.

Research output: Contribution to journalArticle

nitrides
indium
radiation
excitation
polarity
2 Citations (Scopus)

Effect of carrier localization on modulation mechanism in photoreflectance of InGaPN

Lin, K-I., Wang, T. S. & Hwang, J. S., 2008 Apr 1, In : Physica E: Low-Dimensional Systems and Nanostructures. 40, 6, p. 2188-2191 4 p.

Research output: Contribution to journalArticle

Modulation
Photoluminescence
photoluminescence
modulation
Excitons
4 Citations (Scopus)

Enhancement of terahertz radiation in semiconductors induced by conjugated polymer

Hwang, J. S., Lin, H. C., Huang, Y. C., Lin, K. I., Chang, J. W. & Guo, T. F., 2008 Jan 29, In : Electrochemical and Solid-State Letters. 11, 3

Research output: Contribution to journalArticle

Conjugated polymers
Semiconductor materials
Radiation
augmentation
polymers
1 Citation (Scopus)

Studies of the interfacial electrical properties of a series of oxide films on GaAs by photoreflectance

Wang, T. S., Lin, K. I., Lin, H. C., Lee, M. H., Lu, Y-T. & Hwang, J. S., 2008 Apr 1, In : Physica E: Low-Dimensional Systems and Nanostructures. 40, 6, p. 1975-1978 4 p.

Research output: Contribution to journalArticle

Oxide films
oxide films
Electric properties
electrical properties
Electric fields
4 Citations (Scopus)

Temperature-dependent parameters of band anticrossing in InGaPN alloys

Lin, K-I., Wang, T. S., Tsai, J. T. & Hwang, J. S., 2008 Jul 28, In : Journal of Applied Physics. 104, 1, 016109.

Research output: Contribution to journalArticle

conduction bands
nitrogen
temperature
shift
nitrides
2007
1 Citation (Scopus)

Conjugate polymer induced enhancement of THz radiation in semiconductors

Hwang, J. S., Lin, H. C., Lin, K. I., Guo, T. F. & Chang, J. W., 2007 Dec 1, ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 ed. p. 59-74 16 p. (ECS Transactions; vol. 11, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor materials
Radiation
Polymers
Interface states
Surface states

Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation

Hwang, J. S., Lin, H. C., Chang, C. K., Wang, T. S., Lin, K. I., Chang, L. S. & Lu, Y-T., 2007 May 23, Terahertz and Gigahertz Electronics and Photonics VI. 647203. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6472).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

valleys
Semiconductors
Electric Field
Radiation
Electric fields
2006
12 Citations (Scopus)

Band anticrossing in InGaPN alloys induced by N-related localized states

Lin, K. I. & Hwang, J. S., 2006 Nov 16, In : Applied Physics Letters. 89, 19, 192116.

Research output: Contribution to journalArticle

temperature dependence
temperature
electronics
interactions
energy
5 Citations (Scopus)

Characteristics of InGaPN/GaAs heterostructures investigated by photoreflectance spectroscopy

Wang, T. S., Lin, K-I. & Hwang, J. S., 2006 Nov 23, In : Journal of Applied Physics. 100, 9, 093709.

Research output: Contribution to journalArticle

spectroscopy
valence
alignment
photoluminescence
high resolution
10 Citations (Scopus)

Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

Lin, C. Y., Fang, Y. K., Chen, S. F., Lin, P. C., Lin, C. S., Chou, T. H., Hwang, J. S. & Lin, K-I., 2006 Feb 25, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 127, 2-3, p. 251-254 4 p.

Research output: Contribution to journalArticle

Nanocrystalline silicon
Hall mobility
Thin films
Film thickness
silicon
8 Citations (Scopus)

Preferential coalescence of nanocrystalline silicon on different film substrates

Lin, C. Y., Fang, Y. K., Chen, S. F., Lin, C. S., Chou, T. H., Hwang, S. B., Hwang, J. S. & Lin, K. I., 2006 Jan 1, In : Journal of Non-Crystalline Solids. 352, 1, p. 44-50 7 p.

Research output: Contribution to journalArticle

Nanocrystalline silicon
Coalescence
coalescing
silicon
Substrates
2 Citations (Scopus)

Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence

Lin, K. I., Chen, K. C., Wang, T. S., Lu, Y-T. & Hwang, J. S., 2006 May 1, In : Physica E: Low-Dimensional Systems and Nanostructures. 32, 1-2 SPEC. ISS., p. 211-214 4 p.

Research output: Contribution to journalArticle

Two dimensional electron gas
Heterojunctions
Photoluminescence
Optical properties
alignment
8 Citations (Scopus)

Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

Lin, K. I., Wang, T. S., Lu, Y-T. & Hwang, J. S., 2006 Mar 1, In : Journal of Applied Physics. 99, 5, 056103.

Research output: Contribution to journalArticle

valence
orbits
nitrogen
curves
x rays
2005
240 Citations (Scopus)

Compact continuous-wave subterahertz system for inspection applications

Karpowicz, N., Zhong, H., Zhang, C., Lin, K-I., Hwang, J. S., Xu, J. & Zhang, X. C., 2005 Jan 31, In : Applied Physics Letters. 86, 5, p. 1-3 3 p., 054105.

Research output: Contribution to journalArticle

continuous radiation
inspection
Gunn diodes
Fresnel lenses
Schottky diodes
136 Citations (Scopus)

Comparison between pulsed terahertz time-domain imaging and continuous wave terahertz imaging

Karpowicz, N., Zhong, H., Xu, J., Lin, K-I., Hwang, J. S. & Zhang, X. C., 2005 Jul 1, In : Semiconductor Science and Technology. 20, 7

Research output: Contribution to journalArticle

Terahertz waves
continuous radiation
Imaging techniques
space shuttles
Space shuttles
10 Citations (Scopus)

Effects of weak ordering of InGaPN

Lin, K-I., Lee, J. Y., Wang, T. S., Hsu, S. H., Hwang, J. S., Hong, Y. G. & Tu, C. W., 2005 May 23, In : Applied Physics Letters. 86, 21, p. 1-3 3 p., 211914.

Research output: Contribution to journalArticle

nitrogen
photoluminescence
molecular beam epitaxy
zinc
Raman spectra
9 Citations (Scopus)

Investigation of structure and properties of nanocrystalline silicon on various buffer layers

Lin, C. Y., Fang, Y. K., Chen, S. F., Lin, C. S., Chou, T. H., Hwang, S. B., Hwang, J. S. & Lin, K. I., 2005 Jan 1, In : Journal of Electronic Materials. 34, 8, p. 1123-1128 6 p.

Research output: Contribution to journalArticle

Nanocrystalline silicon
Buffer layers
silicon films
buffers
silicon
32 Citations (Scopus)

Non-destructive sub-THz CW imaging

Karpowicz, N., Zhong, H., Xu, J., Lin, K-I., Hwang, J. S. & Zhang, X. C., 2005 Jul 21, In : Proceedings of SPIE - The International Society for Optical Engineering. 5727, p. 132-142 11 p., 21.

Research output: Contribution to journalConference article

Gunn diodes
Diode
Imaging
Detectors
Imaging techniques
35 Citations (Scopus)

Studies of band alignment and two-dimensional electron gas in InGaPN/GaAs heterostructures

Hwang, J. S., Lin, K. I., Lin, H. C., Hsu, S. H., Chen, K. C., Lu, Y. T., Hong, Y. G. & Tu, C. W., 2005 Feb 7, In : Applied Physics Letters. 86, 6, p. 1-3 3 p., 061103.

Research output: Contribution to journalArticle

electron gas
alignment
nitrogen
photoluminescence
conduction bands

Studies of terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

Hwang, J. S., Lin, H. G., Lin, K. I., Wang, T. S. & Lu, Y. T., 2005 Dec 1, International Quantum Electronics Conference 2005. p. 1338-1339 2 p. 1561093. (IQEC, International Quantum Electronics Conference Proceedings; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

electric fields
radiation
valleys
estimating
10 Citations (Scopus)

Terahertz radiation from InAlAs and GaAs surface intrinsic-N + structures and the critical electric fields of semiconductors

Hwang, J. S., Lin, H. C., Lin, K. I. & Zhang, X. C., 2005 Sep 19, In : Applied Physics Letters. 87, 12, p. 1-3 3 p., 121107.

Research output: Contribution to journalArticle

electric fields
radiation
surface layers
emitters
2004
5 Citations (Scopus)

Temperature dependence of the optical properties on GaInNP

Hsu, S. H., Su, Y. K., Chang, S. J., Lin, K. I., Lan, W. H., Wu, P. S. & Wu, C. H., 2004 Dec 10, In : Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 765-771 7 p.

Research output: Contribution to journalArticle

Photoluminescence
Optical properties
photoluminescence
optical properties
temperature dependence
2003

Plasma resistance and behavior of polybenzoxazine polymer

Chen, J. K., Lin, K-I., Ko, F. H., Chang, F. C. & Chen, F. C., 2003 Jan 1, Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003. Institute of Electrical and Electronics Engineers Inc., p. 260-261 2 p. 1268745. (Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Curing
Plasmas
Phenolic resins
Water absorption
Polymers
15 Citations (Scopus)

Schottky barrier height and interfacial state density on oxide-GaAs interface

Hwang, J. S., Chang, C. C., Chen, M. F., Chen, C. C., Lin, K. I., Tang, F-C., Hong, M. & Kwo, J., 2003 Jul 1, In : Journal of Applied Physics. 94, 1, p. 348-353 6 p.

Research output: Contribution to journalArticle

oxide films
Raman spectra
oxides
radiant flux density
pumps
3 Citations (Scopus)

Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

Hwang, J. S., Chen, M. F., Lin, K. I., Tsai, C. N., Hwang, W. C., Chou, W. Y., Lin, H. H. & Chen, M. C., 2003 Sep 1, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 9 A, p. 5876-5879 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Gas source molecular beam epitaxy