Projects per year
Personal profile
Education
- 2013 PhD, Electrical Engineering, KULeuven, Belgium
Research Interests
- Semiconductor Physics and Devices
Experience
- 2009~2013 PhD researcher, Inter-university Microelectronic Centre (imec), Belgium
- 2014~present Assistant Professor, Department of Electrical Engineering, National Cheng Kung University, Taiwan
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy -
SDG 9 Industry, Innovation, and Infrastructure
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 9 Finished
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量子電子元件與人工智慧於半導體產業之應用 : 機器學習導向之量子傳輸模擬 及 與現今半導體製程相容之新穎元件製作( V )
Kao, K.-H. (PI)
22-02-01 → 23-01-31
Project: Research project
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量子電子元件與人工智慧於半導體產業之應用 : 機器學習導向之量子傳輸模擬 及 與現今半導體製程相容之新穎元件製作( IV )
Kao, K.-H. (PI)
21-02-01 → 22-01-31
Project: Research project
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量子電子元件與人工智慧於半導體產業之應用 : 機器學習導向之量子傳輸模擬及與現今半導體製程相容之新穎元件製作(3/5)
Kao, K.-H. (PI)
20-02-01 → 21-01-31
Project: Research project
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量子電子元件與人工智慧於半導體產業之應用 : 機器學習導向之量子傳輸模擬 及 與現今半導體製程相容之新穎元件製作(2/5)
Kao, K.-H. (PI)
19-02-01 → 20-01-31
Project: Research project
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量子電子元件與人工智慧於半導體產業之應用 : 機器學習導向之量子傳輸模擬 及 與現今半導體製程相容之新穎元件製作(2/5)
Kao, K.-H. (PI)
19-02-01 → 20-01-31
Project: Research project
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Achieving high endurance in cryogenic FeMFETs
Lin, C. S., Yang, S., Agarwal, A., Syndikus, J., Lehninger, D., Kao, K. H. & Lederer, M., 2026, 2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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HZO-based Ferroelectric FinFETs Exhibiting Low Power, Long Retention, and High Endurance (HZO-Based Ferroelectric FinFETs Exhibiting Low Power, Long Retention, and High Endurance (>109 Cycles) Performance at Cryogenic Temperaturesgt;109 Cycles) Performance at Cryogenic Temperatures
Agarwal, A., Liu, J., Hu, V. P. H., Ma, W. C. Y., Kao, K. H. & Su, C. J., 2026, 2026 IEEE International Memory Workshop, IMW 2026 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (2026 IEEE International Memory Workshop, IMW 2026 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Improved Endurance in HfZrOx-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture
Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Deng, J. F., Hsieh, Y. L., Hsu, H., Liu, T. C., Xu, A. D. & Tsai, C. H., 2026, In: IEEE Journal of the Electron Devices Society. 14, p. 304-310 7 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing
Das, A., Senapati, A., Kumar, G., Lou, Z. F., Müller, J., Maskeen, J. S., Chang, Y. T., Tewari, M., Agarwal, A., Paul, A., Raffel, Y., Maikap, S., Kao, K. H., Agarwal, T., Lashkare, S., Lu, D., Larrieu, G., Lee, M. H. & De, S., 2026 Apr 14, In: ACS nano. 20, 14, p. 10905-10918 14 p.Research output: Contribution to journal › Article › peer-review
Open Access1 Link opens in a new tab Citation (Scopus) -
Comprehensive Analysis of Pulse Voltage Stress Effects on Electrical Degradation in Junctionless Ferroelectric Thin-Film Transistors
Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Yen, Y. C., Yang, J. M., Li, Y. H., Chen, Y. C., Lin, J. Y. & Chang, H. W., 2025, In: IEEE Transactions on Electron Devices. 72, 9, p. 4865-4871 7 p.Research output: Contribution to journal › Article › peer-review