If you made any changes in Pure these will be visible here soon.

Research Output

Filter
Article
2020

Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

Yang, T. H., Su, C. J., Wang, Y. S., Kao, K. H., Lee, Y. J. & Wu, T. L., 2020 Apr 1, In : Japanese Journal of Applied Physics. 59, SG, SGGB08.

Research output: Contribution to journalArticle

2019

Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Chen, S. H., Lian, S. W., Wu, T. R., Chang, T. R., Liou, J. M., Lu, D. D., Kao, K. H., Chen, N. Y., Lee, W. J. & Tsai, J. H., 2019 Jun, In : IEEE Transactions on Electron Devices. 66, 6, p. 2509-2512 4 p., 8704283.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2018

An FET with a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications

Hsieh, Y. F., Chen, S. H., Chen, N. Y., Lee, W. J., Tsai, J. H., Chen, C. N., Chiang, M-H., Lu, D. & Kao, K-H., 2018 Mar 1, In : IEEE Transactions on Electron Devices. 65, 3, p. 855-859 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Junctionless FETs with a Fin Body for Multi-VTH and Dynamic Threshold Operation

Kumar, M. P. V., Lin, J. Y., Kao, K. H. & Chao, T. S., 2018 Aug, In : IEEE Transactions on Electron Devices. 65, 8, p. 3535-3542 8 p., 8399532.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Significance of Multivalley and Nonparabolic Band Structure for GeSn TFET Simulation

Kumar, K., Hsieh, Y. F., Liao, J. H., Kao, K. H. & Wang, Y. H., 2018 Oct, In : IEEE Transactions on Electron Devices. 65, 10, p. 4709-4715 7 p., 8445683.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2017

A dopingless FET with metal-insulator-semiconductor contacts

Kao, K. H. & Chen, L. Y., 2017 Jan, In : IEEE Electron Device Letters. 38, 1, p. 5-8 4 p., 7742896.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Kumar, M. P. V., Hu, C. Y., Walke, A. M., Kao, K. H. & Chao, T. S., 2017 Sep, In : IEEE Transactions on Electron Devices. 64, 9, p. 3563-3568 6 p., 7990547.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Ultra-shallow junction formation by monolayer doping process in single crystalline Si and Ge for future CMOS devices

Chuang, S. S., Cho, T. C., Sung, P. J., Kao, K. H., Chen, H. J. H., Lee, Y. J., Current, M. I. & Tseng, T. Y., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 5, p. P350-P355

Research output: Contribution to journalArticle

6 Citations (Scopus)

Undoped and doped junctionless FETs: Source/drain contacts and immunity to random dopant fluctuation

Chen, L. Y., Hsieh, Y. F. & Kao, K-H., 2017 Jun 1, In : IEEE Electron Device Letters. 38, 6, p. 708-711 4 p., 7891976.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2015

Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Kumar, M. P. V., Hu, C. Y., Kao, K-H., Lee, Y. J. & Chao, T. S., 2015 Sep 7, In : IEEE Transactions on Electron Devices. 62, 11, p. 3541-3546 6 p., 7244201.

Research output: Contribution to journalArticle

20 Citations (Scopus)
2014

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kao, K-H., Verhulst, A. S., Rooyackers, R., Douhard, B., Delmotte, J., Bender, H., Richard, O., Vandervorst, W., Simoen, E., Hikavyy, A., Loo, R., Arstila, K., Collaert, N., Thean, A., Heyns, M. M. & Meyer, K. D., 2014 Dec 7, In : Journal of Applied Physics. 116, 21, 214506.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET

Walke, A. M., Vandooren, A., Rooyackers, R., Leonelli, D., Hikavyy, A., Loo, R., Verhulst, A. S., Kao, K. H., Huyghebaert, C., Groeseneken, G., Rao, V. R., Bhuwalka, K. K., Heyns, M. M., Collaert, N. & Thean, A. V. Y., 2014 Mar, In : IEEE Transactions on Electron Devices. 61, 3, p. 707-715 9 p., 6727530.

Research output: Contribution to journalArticle

54 Citations (Scopus)

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

Kao, K. H., Verhulst, A. S., Van De Put, M., Vandenberghe, W. G., Soree, B., Magnus, W. & De Meyer, K., 2014 Jan 1, In : Journal of Applied Physics. 115, 4, 044505.

Research output: Contribution to journalArticle

30 Citations (Scopus)
2013

A simulation study on process sensitivity of a line tunnel field-effect transistor

Walke, A. M., Vandenberghe, W. G., Kao, K. H., Vandooren, A. & Groeseneken, G., 2013 Feb 15, In : IEEE Transactions on Electron Devices. 60, 3, p. 1019-1027 9 p., 6461086.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Counterdoped pocket thickness optimization of gate-on-source-only tunnel FETs

Kao, K-H., Verhulst, A. S., Vandenberghe, W. G. & De Meyer, K., 2013 Jan 1, In : IEEE Transactions on Electron Devices. 60, 1, p. 6-12 7 p., 6359896.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors

Verreck, D., Verhulst, A. S., Kao, K. H., Vandenberghe, W. G., De Meyer, K. & Groeseneken, G., 2013 Jun 7, In : IEEE Transactions on Electron Devices. 60, 7, p. 2128-2134 7 p., 6523085.

Research output: Contribution to journalArticle

42 Citations (Scopus)
2012

A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

Vandenberghe, W. G., Verhulst, A. S., Kao, K. H., Meyer, K. D., Sorée, B., Magnus, W. & Groeseneken, G., 2012 May 7, In : Applied Physics Letters. 100, 19, 193509.

Research output: Contribution to journalArticle

29 Citations (Scopus)

Direct and indirect band-to-band tunneling in germanium-based TFETs

Kao, K-H., Verhulst, A. S., Vandenberghe, W. G., Soree, B., Groeseneken, G. & De Meyer, K., 2012 Feb 1, In : IEEE Transactions on Electron Devices. 59, 2, p. 292-301 10 p., 6096396.

Research output: Contribution to journalArticle

233 Citations (Scopus)

Modeling the impact of junction angles in tunnel field-effect transistors

Kao, K-H., Verhulst, A. S., Vandenberghe, W. G., Sorée, B., Groeseneken, G. & Meyer, K. D., 2012 Mar 1, In : Solid-State Electronics. 69, p. 31-37 7 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Optimization of gate-on-source-only tunnel FETs with counter-doped pockets

Kao, K. H., Verhulst, A. S., Vandenberghe, W. G., Sorée, B., Magnus, W., Leonelli, D., Groeseneken, G. & De Meyer, K., 2012 Jul 3, In : IEEE Transactions on Electron Devices. 59, 8, p. 2070-2077 8 p., 6226449.

Research output: Contribution to journalArticle

74 Citations (Scopus)
2008

Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Wu, Y. H., Kao, K. H., Chao, T. S. & Lei, T. F., 2008 Feb 1, In : IEEE Electron Device Letters. 29, 2, p. 171-173 3 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure

Ma, M. W., Chao, T. S., Su, C. J., Wu, W. C., Kao, K. H. & Lei, T. F., 2008 Jun 1, In : IEEE Electron Device Letters. 29, 6, p. 592-594 3 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-κ LTPS-TFT

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Wu, Y. H., Yang, T. Y., Kao, K. H., Chao, T. S. & Lei, T. F., 2008 Feb 1, In : IEEE Electron Device Letters. 29, 2, p. 168-170 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Yang, T. Y., Kao, K. H., Chao, T. S. & Lei, T. F., 2008 Mar 1, In : Solid-State Electronics. 52, 3, p. 342-347 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress

Ma, M. W., Chen, C. Y., Wu, W. C., Su, C. J., Kao, K. H., Chao, T. S. & Lei, T. F., 2008 May 1, In : IEEE Transactions on Electron Devices. 55, 5, p. 1153-1160 8 p.

Research output: Contribution to journalArticle

33 Citations (Scopus)

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

Kao, K. H., Chuang, S. H., Wu, W. C., Chao, T. S., Chen, J. H., Ma, M. W., Gao, R. H. & Chiang, M. Y., 2008 Sep 15, In : Applied Physics Letters. 93, 9, 092907.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2007

Impact of High-K Offset Spacer in 65-nm Node SOI Devices

Ma, M. W., Lei, T. F., Wu, C. H., Wang, S. J., Yang, T. Y., Kao, K. H., Wu, W. C. & Chao, T. S., 2007 Mar 7, In : IEEE Electron Device Letters. 28, 3, p. 238-241 4 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)
2006

Fringing electric field effect on 65-nm-node fully depleted silicon-on-insulator devices

Ma, M. W., Chao, T. S., Kao, K. H., Huang, J. S. & Lei, T. F., 2006 Sep 7, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 9 A, p. 6854-6859 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

High-κ material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications

Ma, M. W., Chao, T. S., Kao, K. H., Huang, J. S. & Lei, T. F., 2006 Nov 15, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 11, p. 8656-8658 3 p.

Research output: Contribution to journalArticle