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Research Output


Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

Verreck, D., Verhulst, A. S., Kao, K. H., Vandenberghe, W. G., De Meyer, K. & Groeseneken, G., 2013 Oct 2, In : IEEE Transactions on Electron Devices. 60, 10, 1 p., 6588911.

Research output: Contribution to journalComment/debate