Engineering & Materials Science
FinFET
100%
Nanowires
91%
Static random access storage
57%
Doping (additives)
53%
Transistors
51%
Field effect transistors
51%
Phase change memory
49%
Silicon
44%
Data storage equipment
34%
Threshold voltage
32%
High electron mobility transistors
30%
Electric potential
29%
Networks (circuits)
26%
Oxides
25%
Leakage currents
21%
Computer simulation
20%
Circuit simulation
19%
Capacitance
19%
Spray pyrolysis
18%
System-on-chip
18%
Wire
18%
Substrates
16%
Boron nitride
16%
Gates (transistor)
15%
Metals
14%
Nanosheets
14%
Polysilicon
14%
Physics
13%
Oxide semiconductors
13%
Computer hardware description languages
12%
Aluminum oxide
12%
RRAM
12%
Logic circuits
12%
Pulse code modulation
11%
Titanium oxides
11%
Voltage scaling
11%
Semiconductor doping
11%
Monolayers
10%
Simulators
10%
Ultrasonics
10%
Heterojunction bipolar transistors
8%
Defects
8%
Vacancies
8%
Logic gates
8%
Multilayers
7%
Semiconductor materials
7%
Temperature
7%
Silicon on insulator technology
7%
Modulation
7%
Passivation
7%
Chemical Compounds
Simulation
56%
Voltage
34%
Nanowire
30%
Electron Mobility
27%
Leakage Current
18%
Spray Pyrolysis
15%
Breakdown Voltage
14%
Doping Material
13%
Length
13%
Tunneling
12%
Resistance
11%
Nonconductor
11%
Dimension
9%
Boron Nitride
8%
Monolayer
8%
Transconductance
8%
Reaction Yield
8%
Field Effect
6%
Plastic Property
6%
Oxide
6%
DDD
6%
Flexibility
6%
Metal
5%
Hexagonal Space Group
5%
Hysteresis
5%
Nanosheet
5%
Dielectric Material
5%
Physics & Astronomy
field effect transistors
23%
high electron mobility transistors
15%
SOI (semiconductors)
15%
threshold voltage
12%
nanowires
12%
performance
11%
CMOS
11%
inverters
10%
bipolar transistors
8%
transistors
7%
scaling
7%
simulation
7%
methodology
6%
heterojunctions
6%
silicon
6%
physics
6%
thin bodies
6%
sulfur
6%
cells
5%
insulators
5%
