Projects per year
Personal profile
Education
英國劍橋大學 工程系電機組 博士
Research Interests
低功耗類比/電源積體電路、無線電力傳輸接收器
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Projects
- 1 Finished
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A 1.1 V-Programmable Metal-Fuse Technology With Current-Mode Programming and Program-Guarantee Technique in 28 nm CMOS Technology
Fan, P. M. Y., Chen, C. A., Wang, C. H. & Ko, H. Y., 2025, In: IEEE Transactions on Circuits and Systems I: Regular Papers. 72, 2, p. 685-693 9 p.Research output: Contribution to journal › Article › peer-review
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A 36-Gb/s 1.6-pJ/b PAM-3 Transmitter Leveraging Digital Logic Cells and 4-Tap FFE in 22-nm CMOS
Fan, P. M. Y., Wang, M. X., Lin, W. T. & Liu, Y. C., 2025, In: IEEE Transactions on Circuits and Systems I: Regular Papers. 72, 1, p. 365-373 9 p.Research output: Contribution to journal › Article › peer-review
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Aging Impact of Power MOSFETs in Charger with Different Operation Frequency
Duh, K. H., Wu, C. W., Shieh, M. D., Chen, C. H. & Fan, M. Y., 2022, Proceedings - 2022 IEEE 31st Asian Test Symposium, ATS 2022. IEEE Computer Society, p. 54-59 6 p. (Proceedings of the Asian Test Symposium; vol. 2022-November).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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17 dBm Differential charge pump EPC Gen2 UHF RFID demodulator for 9 dB receive sensitivity boost
Savanth, A., Fan, P., Gamage, S., Achuthan, T. & Garcia-Redondo, F., 2021, Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc., (Proceedings - A-SSCC 2021: IEEE Asian Solid-State Circuits Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing
Chou, S. Y. S., Chen, S., Chang, J. H., Cheng, W. H., Chih, Y. D., Fan, P., Huang, C. E., Hung, C. M., Li, G. H., Wang, Y., Wu, S. D. & Chang, T. Y. J., 2021, In: IEEE Solid-State Circuits Letters. 4, p. 170-173 4 p.Research output: Contribution to journal › Article › peer-review
Open Access3 Citations (Scopus)