• 1606 Citations
  • 21 h-Index
1984 …2020

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High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

Wang, S-J., Wu, S. L., Chung, H. D., Chang, W. & Wang, K. L., 1994 Jan 1.

Research output: Contribution to conferencePaper

Simulation of composite resonant tunneling diodes for multiple-valued logic applications

Wang, S. J. & Uang, K. M., 1992 Jan 1, p. 322-324. 3 p.

Research output: Contribution to conferencePaper

Study of delta-doping concentration effect on a novel quantum-well HEMT structure

Cheng, C. Y., Wang, S-J., Lin, J. C. & Luo, Y. C., 1997 Jan 1, p. 209-212. 4 p.

Research output: Contribution to conferencePaper