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Engineering
Pull-in Voltage
100%
Young's Modulus
90%
Taguchi Method
84%
Microelectromechanical System
78%
Residual Stress
75%
Simulation Model
74%
Simulation Result
64%
Material Level
60%
Fatigue Life
45%
Physical Meaning
45%
Thin Films
39%
Experimental Result
39%
Analytical Model
35%
Parameter Design
30%
Simulation Software
30%
Strip Thickness
30%
Bonding Process
30%
Structural Design
30%
Structural Materials
30%
Length (L)
30%
Cantilever Beam
30%
Analyse Variability
30%
Electromechanical Behavior
30%
Geometric Parameter
30%
Ball Grid Arrays
30%
Back Muscle
30%
Fitting Curve
30%
Fracture Mechanism
30%
Testing Method
30%
Test Structure
24%
Experimental Value
24%
Closed Form Solution
24%
Design Criterion
20%
Euler Beam
19%
Energy Method
19%
Beam Model
19%
Production Line
18%
Silicon Wafer
15%
Material Parameter
15%
Expansion Coefficient
15%
Main Effect Plot
15%
Experimental Measurement
15%
Laser Beam
15%
Measured Data
15%
Abaqus
15%
Law Creep
15%
Larger Quantity
15%
Capacitive
15%
Maximum Stress
15%
Commercial Software Package
15%
Keyphrases
Grip Ring
60%
Wafer Level
60%
Test Keys
60%
Residual Stress
50%
On-wafer Measurement
42%
Microdevice
36%
Young's Modulus
31%
Wire Bonding Process
30%
Electrical Test
30%
Structural Materials
30%
Wafer
30%
Mechanical Properties
30%
Dicing Tape
30%
Tape Expansion
30%
Optimal Algorithm
30%
Material Property Extraction
30%
Strip Warpage
30%
Multi-hole Extrusion
30%
Electrostatic MEMS
30%
CMOS-MEMS
30%
Testing Method
30%
Taguchi Method
24%
Pull-in Voltage
18%
Microscale Testing
15%
Electrostatic Microbeams
15%
Wafer Crack
15%
Tape Thickness
15%
Main Effect Plot
15%
Skin Stretch
15%
Simulation Model
14%
Structural Design
12%
MEMS Devices
12%
Simulation Software
9%
Testing Algorithm
9%
Creep Equation
9%
Modified Coffin-Manson Equation
9%
Test Beam
9%
Space Change
9%
Optimal Test
9%
Geometric Parameters
9%
Metal(II)
9%
Parameter Design
9%
Material Parameter Extraction
9%
Temperature Cycle Test
9%
Two-directional
9%
Crystal Structural
9%
Crystal Direction
9%
Variability Analysis
9%
Microelectromechanical Devices
9%
Non-ideal Boundary Conditions
9%
Material Science
Young's Modulus
79%
Taguchi Method
75%
Capacitance
75%
Materials Property
60%
Fatigue of Materials
60%
Residual Stress
60%
Product Development
45%
Thermal Expansion
34%
Creep
34%
Materials Class
30%
Building Material
30%
Thin Films
30%
Silicon Wafer
30%
Materials Processing
30%
Sheet Molding Compounds
30%
Microelectromechanical System
30%
Glass Transition Temperature
8%
