Wei-Chi Lai

Professor

  • 4449 Citations
  • 33 h-Index
19982020
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Research Output 1998 2019

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2019

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C. & Chang, T. C., 2019 Aug, In : IEEE Electron Device Letters. 40, 8, p. 1281-1284 4 p., 8736827.

Research output: Contribution to journalArticle

Thin film transistors
Shielding
Electric grounding
Threshold voltage
Computer aided design

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Chen, G. F., Chen, H. C., Chang, T. C., Huang, S. P., Chen, H. M., Liao, P. Y., Chen, J. J., Kuo, C. W., Lai, W. C., Chu, A. K., Lin, S. C., Yeh, C. Y., Chang, C. S., Tsai, C. M., Yu, M. C. & Zhang, S., 2019 Jun, In : IEEE Transactions on Electron Devices. 66, 6, p. 2614-2619 6 p., 8689093.

Research output: Contribution to journalArticle

Thin film transistors
Amorphous silicon
Band structure
Electric potential
Electrons

Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Tsai, C. M., Chang, C. S., Xu, Z., Huang, W. P., Lai, W-C. & Bow, J. S., 2019 Apr 15, In : OSA Continuum. 2, 4, p. 1207-1214 8 p.

Research output: Contribution to journalArticle

Gallium nitride
Indium
Aluminum nitride
gallium nitrides
aluminum nitrides

Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors

Chen, H. C., Tsao, Y. C., Chu, A. K., Huang, H. C., Lai, W. C., Chen, G. F., Huang, S. P., Chang, T. C., Chen, P. H., Chen, J. J., Kuo, C. W., Zhou, K. J. & Hung, Y. H., 2019 Dec, In : IEEE Electron Device Letters. 40, 12, p. 1941-1944 4 p., 8880614.

Research output: Contribution to journalArticle

Thin film transistors
Electric fields
Degradation
Electron traps
Gate dielectrics

Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

Huang, S. P., Chen, P. H., Chen, H. C., Zheng, Y. Z., Chu, A. K., Tsao, Y. C., Shih, Y. S., Wang, Y. X., Wu, C. C., Lai, W. C. & Chang, T. C., 2019 Oct, In : IEEE Electron Device Letters. 40, 10, p. 1638-1641 4 p., 8796401.

Research output: Contribution to journalArticle

Thin film transistors
Dehydrogenation
Polysilicon
Lighting
Annealing
Styrene
Dimethyl sulfoxide
Iodides
Dimethyl Sulfoxide
sulfonates

Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

Chen, H. C., Kuo, C. W., Chang, T. C., Lai, W. C., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Zhou, K. J., Shih, C. C., Tsao, Y. C., Huang, H. C. & Sze, S. M., 2019 Jan 1, In : ACS Applied Materials and Interfaces. 11, 43, p. 40196-40203 8 p.

Research output: Contribution to journalArticle

Thin film transistors
Hydrogen
Capacitance
Moisture
Electric potential
4 Citations (Scopus)

Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

Wadekar, P. V., Chang, C. W., Zheng, Y. J., Guo, S. S., Hsieh, W. C., Cheng, C. M., Ma, M. H., Lai, W. C., Sheu, J. K., Chen, Q. Y. & Tu, L. W., 2019 Apr 15, In : Applied Surface Science. 473, p. 693-698 6 p.

Research output: Contribution to journalArticle

Ferromagnetism
ferromagnetism
Doping (additives)
valence
room temperature
2018
1 Citation (Scopus)

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Chang, C. W., Wadekar, P. V., Guo, S. S., Cheng, Y. J., Chou, M., Huang, H. C., Hsieh, W. C., Lai, W. C., Chen, Q. Y. & Tu, L. W., 2018 Jan 1, In : Journal of Electronic Materials. 47, 1, p. 359-367 9 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Surface morphology
Nitrogen
Tuning
3 Citations (Scopus)

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Chen, H. C., Chang, T. C., Lai, W. C., Chen, G. F., Chen, B. W., Hung, Y. J., Chang, K. J., Cheng, K. C., Huang, C. S., Chen, K. K., Lu, H. H. & Lin, Y. H., 2018 Aug 8, In : ACS Applied Materials and Interfaces. 10, 31, p. 25866-25870 5 p.

Research output: Contribution to journalArticle

Thin film transistors
Oxide films
Metals
Annealing
Zinc Oxide
7 Citations (Scopus)
fullerenes
heterojunctions
solar cells
methylidyne
electrodes
5 Citations (Scopus)

Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

Lai, W-C., Lin, K. W., Guo, T-F., Chen, C-Y. & Liao, Y. Y., 2018 Jan 1, In : AIP Advances. 8, 1, 015109.

Research output: Contribution to journalArticle

heterojunctions
solar cells
methylidyne
room temperature
sputtering
3 Citations (Scopus)

Polarization-selecting III-nitride elliptical nanorod light-emitting diodes fabricated with nanospherical-lens lithography

Chou, M. C., Lin, C. Y., Lin, B. L., Wang, C. H., Chang, S. H., Lai, W. C., Lai, K. Y. & Chang, Y. C., 2018 Aug 28, In : ACS Nano. 12, 8, p. 8748-8757 10 p.

Research output: Contribution to journalArticle

Nanorods
Nitrides
Lithography
nanorods
nitrides
2017
16 Citations (Scopus)

InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid

Sheu, J-K., Liao, P. H., Huang, T. C., Chiang, K. J., Lai, W-C. & Lee, M. L., 2017 Jul 1, In : Solar Energy Materials and Solar Cells. 166, p. 86-90 5 p.

Research output: Contribution to journalArticle

formic acid
Epitaxial films
Formic acid
Hydrogen
Electrodes
2 Citations (Scopus)

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions

Kuo, Y. K., Shih, Y. H., Chang, J. Y., Lai, W. C., Liu, H., Chen, F. M., Lee, M. L. & Sheu, J. K., 2017 Aug 7, In : Optics Express. 25, 16, p. A777-A784

Research output: Contribution to journalArticle

tunnel junctions
light emitting diodes
polarization
electric potential
diagrams
2 Citations (Scopus)

Robust and Recyclable Substrate Template with an Ultrathin Nanoporous Counter Electrode for Organic-Hole-Conductor-Free Monolithic Perovskite Solar Cells

Li, M. H., Yang, Y. S., Wang, K. C., Chiang, Y. H., Shen, P. S., Lai, W. C., Guo, T. F. & Chen, P., 2017 Dec 6, In : ACS Applied Materials and Interfaces. 9, 48, p. 41845-41854 10 p.

Research output: Contribution to journalArticle

Perovskite
Electrodes
Conversion efficiency
Substrates
Annealing
2016
10 Citations (Scopus)

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Shih, Y. H., Chang, J. Y., Sheu, J-K., Kuo, Y. K., Chen, F. M., Lee, M. L. & Lai, W-C., 2016 Mar 1, In : IEEE Transactions on Electron Devices. 63, 3, p. 1141-1147 7 p., 7399737.

Research output: Contribution to journalArticle

Diodes
Electrons
Light emitting diodes
Chemical analysis
Valence bands
7 Citations (Scopus)

Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption

Sheu, J. K., Chen, P. C., Shin, C. L., Lee, M. L., Liao, P. H. & Lai, W. C., 2016 Dec 1, In : Solar Energy Materials and Solar Cells. 157, p. 727-732 6 p.

Research output: Contribution to journalArticle

Manganese
Heterojunctions
Absorption spectra
Solar cells
Electron energy levels
2 Citations (Scopus)

Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer

Sheu, J. K., Chen, P. C., Yeh, Y. H., Kuo, S. H., Lee, M. L., Liao, P. H. & Lai, W. C., 2016 Apr 15, In : Acta Materialia. 108, p. 17-25 9 p.

Research output: Contribution to journalArticle

Masks
Diodes
Electron transitions
Valence bands
Photodiodes
87 Citations (Scopus)

NiOxElectrode Interlayer and CH3NH2/CH3NH3PbBr3Interface Treatment to Markedly Advance Hybrid Perovskite-Based Light-Emitting Diodes

Chih, Y. K., Wang, J. C., Yang, R. T., Liu, C. C., Chang, Y. C., Fu, Y. S., Lai, W-C., Chen, C-Y., Wen, T-C., Huang, Y. C., Tsao, C. S. & Guo, T-F., 2016 Jan 1, In : Advanced Materials. 28, 39, p. 8687-8694 8 p.

Research output: Contribution to journalArticle

Perovskite
Nickel oxide
Light emitting diodes
Electrodes
Styrene
36 Citations (Scopus)

Oxidized Ni/Au Transparent Electrode in Efficient CH 3 NH 3 PbI 3 Perovskite/Fullerene Planar Heterojunction Hybrid Solar Cells

Lai, W-C., Lin, K. W., Wang, Y. T., Chiang, T. Y., Chen, C-Y. & Guo, T-F., 2016 Jan 1, In : Advanced Materials. 28, 17, p. 3290-3297 8 p.

Research output: Contribution to journalArticle

Fullerenes
Perovskite
Heterojunctions
Solar cells
Electrodes
2015
3 Citations (Scopus)

Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Yu, C. T., Lai, W. C., Yen, C. H., Chang, C. W., Tu, L. W. & Chang, S. J., 2015 May 1, In : IEEE Transactions on Electron Devices. 62, 5, p. 1473-1477 5 p., 7078911.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Conversion efficiency
Solar cells
Nucleation
Sun
25 Citations (Scopus)
interlayers
solar cells
room temperature
volatile organic compounds
sulfonates
1 Citation (Scopus)

Double superstructures in InGaN/GaN nano-pyramid arrays

Chang, C. Y., Li, H., Hong, K. B., Yang, Y. Y., Lai, W. C. & Lu, T. C., 2015 Aug 11, In : Superlattices and Microstructures. 86, p. 275-279 5 p.

Research output: Contribution to journalArticle

pyramids
Semiconductor quantum wells
Stark effect
Indium
Quantum confinement
9 Citations (Scopus)

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

Chang, H. M., Lai, W. C., Chen, W. S. & Chang, S. J., 2015 Apr 6, In : Optics Express. 23, 7, p. A337-A345

Research output: Contribution to journalArticle

ultraviolet radiation
light emitting diodes
quantum wells
output
wavelengths
14 Citations (Scopus)

GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer

Wang, C. K., Chiou, Y. Z., Chang, S. J., Lai, W. C., Chang, S. P., Yen, C. H. & Hung, C. C., 2015 Sep, In : IEEE Sensors Journal. 15, 9, p. 4743-4748 6 p., 7093119.

Research output: Contribution to journalArticle

Photodetectors
photometers
Nucleation
nucleation
Semiconductor materials
23 Citations (Scopus)

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

Hsieh, D. H., Tzou, A. J., Kao, T. S., Lai, F. I., Lin, D. W., Lin, B. C., Lu, T. C., Lai, W. C., Chen, C. H. & Kuo, H. C., 2015 Oct 19, In : Optics Express. 23, 21, p. 27145-27151 7 p.

Research output: Contribution to journalArticle

carrier injection
surface emitting lasers
cavities
electrons
threshold currents
1 Citation (Scopus)

Light emitting diodes

Lin, C. C., Chen, K. J., Lin, D. W., Han, H. V., Lai, W. C., Huang, J. J., Lu, T. C., Chang, S. J. & Kuo, H. C., 2015 Jan 1, In : Topics in Applied Physics. 129, p. 179-234 56 p.

Research output: Contribution to journalArticle

light emitting diodes
5 Citations (Scopus)

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Chen, P. H., Chen, Y. A., Chang, L. C., Lai, W. C. & Kuo, C. H., 2015 Jul, In : Solid-State Electronics. 109, p. 29-32 4 p., 6758.

Research output: Contribution to journalArticle

Die casting inserts
inserts
Light emitting diodes
light emitting diodes
Electric potential
3 Citations (Scopus)

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on an AlN nanorod-array template

Tsai, C. H., Ma, M. H., Yin, Y. F., Li, H. W., Lai, W-C. & Huang, J., 2015 May 1, In : IEEE Journal of Quantum Electronics. 51, 5, 7066933.

Research output: Contribution to journalArticle

Nanorods
nanorods
Light emitting diodes
light emitting diodes
templates
21 Citations (Scopus)

Perovskite-based solar cells with nickel-oxidized nickel oxide hole transfer layer

Lai, W. C., Lin, K. W., Guo, T. F. & Lee, J., 2015 May 1, In : IEEE Transactions on Electron Devices. 62, 5, p. 1590-1595 6 p., 7072522.

Research output: Contribution to journalArticle

Nickel oxide
Nickel
Perovskite
Solar cells
Volatile organic compounds
6 Citations (Scopus)

Vertical GaN-Based LEDs with Naturally Textured Surface Formed by Patterned Sapphire Substrate with Self-Assembled Ag Nanodots as Etching Mask

Yeh, Y. H., Sheu, J. K., Lee, M. L., Yen, W. Y., Peng, L. C., Yeh, C. Y., Liao, P. H., Chen, P. C. & Lai, W. C., 2015 Sep 1, In : IEEE Transactions on Electron Devices. 62, 9, p. 2919-2923 5 p., 7202874.

Research output: Contribution to journalArticle

Aluminum Oxide
Sapphire
Light emitting diodes
Masks
Etching
9 Citations (Scopus)

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids

Lee, M. L., Yeh, Y. H., Tu, S. J., Chen, P. C., Lai, W-C. & Sheu, J-K., 2015 Apr 6, In : Optics Express. 23, 7, p. A401-A412

Research output: Contribution to journalArticle

pyramids
light emitting diodes
templates
quantum wells
indium
2014
12 Citations (Scopus)
light emitting diodes
injection
electrons
output
power efficiency
15 Citations (Scopus)

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer

Lai, W. C., Lin, C. N., Lai, Y. C., Yu, P., Chi, G. C. & Chang, S. J., 2014 Mar 10, In : Optics Express. 22, 5, p. A396-A401

Research output: Contribution to journalArticle

gallium nitrides
indium oxides
tin oxides
graphene
light emitting diodes
1 Citation (Scopus)

GaN-Based light-emitting-diode with a p-InGaN layer

Chen, P. H., Kuo, C. H., Lai, W. C., Chen, Y. A., Chang, L. C. & Chang, S. J., 2014 Mar 1, In : IEEE/OSA Journal of Display Technology. 10, 3, p. 204-207 4 p., 6679256.

Research output: Contribution to journalArticle

Light emitting diodes
light emitting diodes
Electric potential
electric potential
10 Citations (Scopus)

Optoelectrical characteristics of green lightemitting diodes containing thick InGaN wells with digitally grown InN/GaN

Yu, C. T., Lai, W-C., Yen, C. H., Hsu, H-C. & Chang, S-J., 2014 Jan 1, In : Optics Express. 22, SUPPL. 3

Research output: Contribution to journalArticle

light emitting diodes
diodes
activation energy
photoluminescence
optical properties
3 Citations (Scopus)

Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode

Lai, W. C., Ma, M. H., Lin, B. K., Hsieh, B. H., Wu, Y. R. & Sheu, J. K., 2014 Dec 15, In : Optics Express. 22, 25, p. A1853-A1861

Research output: Contribution to journalArticle

gradients
electrodes
hydrogen
cells
electromagnetic absorption
1 Citation (Scopus)

Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

Lee, M. L., Yeh, Y. H., Chang, K. H., Chen, P. C., Lai, W. C. & Sheu, J. K., 2014 Nov 1, In : IEEE Journal on Selected Topics in Quantum Electronics. 20, 6, 6824169.

Research output: Contribution to journalArticle

Photodiodes
photodiodes
Lattice mismatch
Tensile strain
spectral sensitivity
19 Citations (Scopus)

Terahertz plasmonic waveguide based on metal rod arrays for nanofilm sensing

You, B., Peng, C. C., Jhang, J. S., Chen, H. H., Yu, C. P., Lai, W-C., Liu, T. A., Peng, J. L. & Lu, J-Y., 2014 Jan 1, In : Optics Express. 22, 9, p. 11340-11350 11 p.

Research output: Contribution to journalArticle

rods
waveguides
metals
distribution (property)
high aspect ratio
2013
6 Citations (Scopus)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Lee, M. L., Yeh, Y. H., Tu, S. J., Chen, P. C., Wu, M. J., Lai, W. C. & Sheu, J. K., 2013 Sep 9, In : Optics Express. 21, 105, p. A864-A871

Research output: Contribution to journalArticle

pyramids
light emitting diodes
templates
wavelengths
cathodoluminescence

Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes

Lai, W. C. & Yang, Y. Y., 2013 Jan 1, In : IEEE/OSA Journal of Display Technology. 9, 4, p. 234-238 5 p., 6374703.

Research output: Contribution to journalArticle

spacers
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
6 Citations (Scopus)
Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes

Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Lai, W-C., Yang, Y. Y. & Horng, R. H., 2013 Dec 2, In : IEEE/OSA Journal of Display Technology. 9, 12, p. 953-956 4 p., 6542659.

Research output: Contribution to journalArticle

caps
Semiconductor quantum wells
Solar cells
solar cells
quantum wells
6 Citations (Scopus)

GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Lai, W. C., Yen, C. H. & Chang, S. J., 2013 Oct 1, In : Applied Physics Express. 6, 10, 102101.

Research output: Contribution to journalArticle

Light emitting diodes
light emitting diodes
blue shift
Wavelength
output
4 Citations (Scopus)

GaN-based light-emitting diodes on electrochemically etched n --GaN template

Lai, W. C., Yen, C. H., Li, J. Z., Yang, Y. Y., Cheng, H. E., Chang, S. J. & Li, S., 2013 Aug 5, In : IEEE Photonics Technology Letters. 25, 15, p. 1531-1534 4 p., 6548046.

Research output: Contribution to journalArticle

Light emitting diodes
light emitting diodes
templates
Electrochemical etching
voids

GaN-based light-emitting diodes with step graded-refractive index (ZnO x(SiO2)1-x micropillar array

Chang, H. M., Yang, Y. Y., Lai, W. C., Li, S., Lin, Y. R., Jiao, Z. Y. & Chang, S. J., 2013 Jan 1, In : IEEE/OSA Journal of Display Technology. 9, 5, p. 353-358 6 p., 6308728.

Research output: Contribution to journalArticle

Light emitting diodes
Refractive index
light emitting diodes
refractivity
ITO (semiconductors)
13 Citations (Scopus)

GaN-Based ultraviolet light emitting diodes with Ex situ sputtered AlN nucleation layer

Lai, W. C., Yen, C. H., Yang, Y. Y., Wang, C. K. & Chang, S. J., 2013 Jun 6, In : IEEE/OSA Journal of Display Technology. 9, 11, p. 895-899 5 p., 6522544.

Research output: Contribution to journalArticle

Gallium nitride
Aluminum nitride
gallium nitrides
aluminum nitrides
ultraviolet radiation
14 Citations (Scopus)

Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

Sheu, J-K., Huang, F. W., Lee, C. H., Lee, M. L., Yeh, Y. H., Chen, P. C. & Lai, W-C., 2013 Aug 5, In : Applied Physics Letters. 103, 6, 063906.

Research output: Contribution to journalArticle

solar cells
air masses
short circuit currents
open circuit voltage
spectral sensitivity
11 Citations (Scopus)

Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate

Sheu, J-K., Yeh, Y. H., Tu, S. J., Lee, M. L., Chen, P. C. & Lai, W-C., 2013 Mar 19, In : Journal of Lightwave Technology. 31, 8, p. 1318-1322 5 p., 6464504.

Research output: Contribution to journalArticle

voids
sapphire
light emitting diodes
output
air