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Research Output 1981 2019

2019

An RRAM with a 2D material embedded double switching layer for neuromorphic computing

Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W-C., Akinwande, D. & Chiang, M-H., 2019 Jan 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

random access memory
oxygen ions
plastic properties
Plasticity
Ions

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Huang, Y. P., Hsu, W-C., Liu, H. Y. & Lee, C. S., 2019 Jun 1, In : IEEE Electron Device Letters. 40, 6, p. 929-932 4 p., 8693634.

Research output: Contribution to journalArticle

Spray pyrolysis
Gate dielectrics
Drain current
Electric breakdown
Threshold voltage

Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2019 Jan 1, In : IEEE Journal of the Electron Devices Society. 7, p. 430-434 5 p., 8671702.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Oxides
Metals
Electric breakdown
2018

Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2018 Jan 1, (Accepted/In press) In : IEEE Journal of the Electron Devices Society.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
1 Citation (Scopus)

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W-C., 2018 Jan 1, In : IEEE Journal of the Electron Devices Society. 6, p. 1142-1146 5 p., 8470934.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
3 Citations (Scopus)
Spray pyrolysis
High electron mobility transistors
metal oxide semiconductors
pyrolysis
sprayers
2 Citations (Scopus)

Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications

Liu, H. Y., Hung, C. C. & Hsu, W-C., 2018 Oct 1, In : IEEE Electron Device Letters. 39, 10, p. 1520-1523 4 p., 8444690.

Research output: Contribution to journalArticle

Spray pyrolysis
Thin film transistors
Oxide films
Ultrasonics
Thin films
2017
1 Citation (Scopus)

Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

Lee, C. S., Hsu, W-C., Liu, H. Y. & Yang, S. T., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 12, p. Q166-Q170

Research output: Contribution to journalArticle

High electron mobility transistors
Electric breakdown
Hydrogen peroxide
Hydrogen Peroxide
Transconductance
1 Citation (Scopus)

All-zigzag graphene nanoribbons for planar interconnect application

Chen, P. A., Chiang, M-H. & Hsu, W-C., 2017 Jul 21, In : Journal of Applied Physics. 122, 3, 034301.

Research output: Contribution to journalArticle

lightning
graphene
eigenvectors
Green's functions
transport properties
1 Citation (Scopus)

Amorphous TiO2-based thin-film phototransistor

Liu, H. Y., Huang, R. C., Li, Y. Y., Lee, C. S. & Hsu, W-C., 2017 Jun 1, In : IEEE Electron Device Letters. 38, 6, p. 756-759 4 p., 7898432.

Research output: Contribution to journalArticle

Phototransistors
Thin films
Gate dielectrics
Amorphous films
Field effect transistors
3 Citations (Scopus)

Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Lee, C. S., Hsu, W-C., Liu, H. Y., Chen, S. F., Chen, Y. C. & Yang, S. T., 2017 Aug 1, In : Materials Science in Semiconductor Processing. 66, p. 39-43 5 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Ions
Ozone
Gate dielectrics
3 Citations (Scopus)

Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W-C., Chiang, B. J., Liu, H. Y. & Lee, H. Y., 2017 Apr 5, In : Semiconductor Science and Technology. 32, 5, 055012.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
Electric breakdown
metal oxide semiconductors
pyrolysis
1 Citation (Scopus)
high electron mobility transistors
metal oxide semiconductors
transconductance
electrical faults
leakage
1 Citation (Scopus)

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Liu, H. Y., Lee, C. S., Lin, C. W., Chiang, M-H. & Hsu, W-C., 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999446. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Threshold voltage
Fluorine
Doping (additives)
Gate dielectrics
3 Citations (Scopus)

Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Liu, H. Y., Lin, C. W., Hsu, W-C., Lee, C. S., Chiang, M-H., Sun, W. C., Wei, S. Y. & Yu, S. M., 2017 Jan 1, In : IEEE Electron Device Letters. 38, 1, p. 91-94 4 p., 7736038.

Research output: Contribution to journalArticle

Threshold voltage
Fabrication
Spray pyrolysis
Gate dielectrics
Electric breakdown
4 Citations (Scopus)

Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

Lee, C. S., Liu, H. Y., Hsu, W-C. & Chen, S. F., 2017 Mar 1, In : Materials Science in Semiconductor Processing. 59, p. 1-4 4 p.

Research output: Contribution to journalArticle

Ozone water treatment
water treatment
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors

Simulation based study of oxygen plasma induced defects on zigzag graphene nanoribbons

Chen, P. A., Lee, J. W., Chiang, M-H. & Hsu, W-C., 2017 Jan 1, ECS Transactions. Bhansali, S., Brankovic, S., Buttry, D. A., Chu, D., Imahori, H., Katayama, H., Leonte, O., Mukerjee, S., Mukundan, R., Oren, Y., Romankiw, L., Sharma, N., Simonian, A., Trulove, P. C., Vaughey, J. T., Winter, M., Bartlett, P. N., Di Noto, V., Doeff, M., Druffel, T., Fenton, J. M., Fergus, J., Fukunaka, Y., Itagaki, M., Koehne, J., Kostecki, R., Lynch, R. P., Milosev, I., Narayan, S. R., Subramanian, V., Tatsuma, T., Wu, N., Chen, Z., Haverhals, L. M., Hesketh, P., Hillier, A. C., Inaba, M., Krumdick, G., Leddy, J., Manivannan, M., Maurice, V., Mitra, S., Muldoon, J., Noel, J., Rajeshwar, K., Subramanian, V. R., Suroviec, A. H., Suto, K., Zangari, G., Allongue, P., Birbilis, N., Boltalina, O. V., Calabrese Barton, S., Chaitanya, V., Chidambaram, D., Hite, J. K., Lee, J. J., Mantz, R. A., Mauzeroll, J., Minteer, S. D., Orazem, M. E., Ramasamy, R. P., Riemer, D. P., Roeper, D., Rohwerder, M., Sailor, M. J., Schwartz, D. T., Staser, J. A., Wu, G., Xu, H., Alkire, R., Anderson, T. J., Bayachou, M., Bocarsly, A. B., Choi, J. W., Innocenti, M., Kilgore, S. H., Kim, D. J., Kulesza, P. J., Lu, Y. C., Marcus, P., Mauter, M., Nicholas, J. D., Pylypenko, S., Rhodes, C., Soleymani, L., Tao, M., Xing, Y., Abbott, A. P., Chin, B. A., Cliffel, D. E., Douglas, E. A., Edstrom, K., Hamada, H., McMurray, H. N., Meng, Y. S., Miller, E. L., Navaei, M., Nonnenmann, S. S., O'Dwyer, C., Pharkya, P., Rotkin, S. V., Rupp, J. L. M., Williams, G., Bock, C., Buchheit, R., Cheek, G. T., Deligianni, H., Johnson, C., Park, J. G., Pintauro, P. N., Smith, K. C., Vanysek, P., Wang, H., Whitacre, J. F., Xiao, J., Carter, M. T., Dimitrov, N., Fransaer, J., Guyomard, D., Lucht, B. L., Nagahara, L., Natishan, P. M., Sekhar, P. K., Smith, D. K., Stafford, G. R., Sundaram, K. B., Vasiljevic, N., Virtanen, S., Wang, W., Wood, D. L. & Yang, J. J. (eds.). 10 ed. Electrochemical Society Inc., p. 463-471 9 p. (ECS Transactions; vol. 80, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanoribbons
Graphene
Plasmas
Defects
Oxygen
2016
2 Citations (Scopus)

Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

Lee, C. S., Hsu, W-C., Liu, H. Y., Tsai, J. H. & Huang, H. H., 2016 Apr 1, In : Japanese Journal of Applied Physics. 55, 4, 044102.

Research output: Contribution to journalArticle

MOSFET devices
High electron mobility transistors
high electron mobility transistors
Ozone
ozone
9 Citations (Scopus)

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

Liu, H. Y., Hsu, W-C., Chen, W. F., Lin, C. W., Li, Y. Y., Lee, C. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 May 15, In : IEEE Sensors Journal. 16, 10, p. 3514-3522 9 p., 7409941.

Research output: Contribution to journalArticle

Ion sensitive field effect transistors
pH sensors
High electron mobility transistors
Passivation
passivity
1 Citation (Scopus)

Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

Liu, H. Y., Ou, W. C. & Hsu, W-C., 2016 Sep 1, In : IEEE Journal of the Electron Devices Society. 4, 5, p. 358-364 7 p., 7523248.

Research output: Contribution to journalArticle

Semiconductors
Oxides
Metals
Electrons
Annealing
7 Citations (Scopus)

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W-C., Liu, H. Y., Wu, T. T., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 Mar 29, In : Semiconductor Science and Technology. 31, 5, 055012.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
pyrolysis
6 Citations (Scopus)
Spray pyrolysis
High electron mobility transistors
Electric breakdown
Current density
Ultrasonics
2015
2 Citations (Scopus)

6-T SRAM performance assessment with stacked silicon nanowire MOSFETs

Huang, Y. C., Chiang, M-H., Hsu, W-C. & Cheng, S. Y., 2015 Apr 13, Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015. IEEE Computer Society, p. 610-614 5 p. 7085497. (Proceedings - International Symposium on Quality Electronic Design, ISQED; vol. 2015-April).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Static random access storage
Nanowires
Transistors
Silicon

AlGaN/AlN/GaN MOS-HEMTs with Al 2 O 3 gate dielectric formed by using ozone water oxidation technique

Lee, C. S., Liu, H. Y., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 Aug 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 194-196 3 p. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gate dielectrics
High electron mobility transistors
Ozone
Oxidation
Metals
2 Citations (Scopus)

AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

Liu, H. Y., Lee, C. S., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 Aug 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 578-580 3 p. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spray pyrolysis
Gate dielectrics
High electron mobility transistors
Ultrasonics
Gates (transistor)
5 Citations (Scopus)

An investigation of organic photovoltaics improvement via extension of the exciton lifetime

Yao, E. P., Tsai, Y. J. & Hsu, W-C., 2015 Jan 1, In : Physical Chemistry Chemical Physics. 17, 8, p. 5826-5831 6 p.

Research output: Contribution to journalArticle

excitons
Heterojunctions
heterojunctions
life (durability)
atomic energy levels

A steep subthreshold swing technique for gate-all-around SOI MOSFETs

Chen, C. Y., Lin, J. T., Chiang, M-H. & Hsu, W-C., 2015 Jan 1, Advanced CMOS-Compatible Semiconductor Devices 17. Selberherr, S., Omura, Y., Martino, J. A., Raskin, J. P., Ishii, H., Gamiz, F. & Nguyen, B. Y. (eds.). 5 ed. Electrochemical Society Inc., p. 87-92 6 p. (ECS Transactions; vol. 66, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanowires
Silicon
Computer simulation
Electric potential
Hot Temperature
1 Citation (Scopus)

Characterization of Interfaces between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model

Yao, E. P., Shiu, S. M., Tsai, Y. J., Lin, Y. S. & Hsu, W-C., 2015 May 1, In : IEEE Journal of Photovoltaics. 5, 3, p. 903-911 9 p., 7055231.

Research output: Contribution to journalArticle

Energy barriers
Buffer layers
equivalent circuits
Equivalent circuits
Spectroscopy
1 Citation (Scopus)

Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield

Zheng, P., Liao, Y. B., Damrongplasit, N., Chiang, M-H., Hsu, W-C. & Liu, T. J. K., 2015 Dec 4, 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 7348585

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Static random access storage
Electric potential
FinFET
5 Citations (Scopus)

Enhanced performances of AlGaN/GaN ion-sensitive field-effect transistors using H2O2-grown Al2O3 for sensing membrane and surface passivation applications

Liu, H. Y., Hsu, W-C., Lee, C. S., Chou, B. Y. & Chen, W. F., 2015 Jun 1, In : IEEE Sensors Journal. 15, 6, p. 3359-3366 8 p., 7006662.

Research output: Contribution to journalArticle

Ion sensitive field effect transistors
Passivation
passivity
field effect transistors
membranes
8 Citations (Scopus)

Fabrication AlGaN/GaN MIS UV photodetector by H2O2 Oxidation

Liu, H. Y., Hsu, W-C., Chou, B. Y. & Wang, Y. H., 2015 Jan 1, In : IEEE Photonics Technology Letters. 27, 1, p. 101-104 4 p., 6922481.

Research output: Contribution to journalArticle

Management information systems
MIS (semiconductors)
Photodetectors
photometers
Metals
10 Citations (Scopus)

Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

Chou, B. Y., Hsu, W-C., Liu, H. Y., Lee, C. S., Wu, Y. S., Sun, W. C., Wei, S. Y., Yu, S. M. & Chiang, M-H., 2015 Jan 1, In : Semiconductor Science and Technology. 30, 1, 015009.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
pyrolysis
21 Citations (Scopus)

Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition

Lee, C. S., Hsu, W-C., Chou, B. Y., Liu, H. Y., Yang, C. L., Sun, W. C., Wei, S. Y., Yu, S. M. & Wu, C. L., 2015 May 1, In : IEEE Transactions on Electron Devices. 62, 5, p. 1460-1466 7 p., 7073640.

Research output: Contribution to journalArticle

Spray pyrolysis
Field effect transistors
Heterojunctions
Ultrasonics
Oxides
3 Citations (Scopus)

Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation

Lin, Y. S., Lin, S. F. & Hsu, W-C., 2015 Jan 1, In : Semiconductor Science and Technology. 30, 1, 015016.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
Microwaves
6 Citations (Scopus)

Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors

Liu, H. Y., Wang, Y. H. & Hsu, W-C., 2015 Sep 1, In : IEEE Sensors Journal. 15, 9, p. 5202-5207 6 p., 7115014.

Research output: Contribution to journalArticle

Dark currents
Photodetectors
dark current
photometers
retarding

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

Liu, H. Y., Hsu, W-C., Chou, B. Y., Lee, C. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2015 Aug 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 575-577 3 p. 7203396. (Proceedings of the International Conference on Power Electronics and Drive Systems; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spray pyrolysis
High electron mobility transistors
Ultrasonics
Metals
Temperature
2014
16 Citations (Scopus)

Al2O3-passivated AlGaN/GaN HEMTs by using nonvacuum ultrasonic spray pyrolysis deposition technique

Chou, B. Y., Liu, H. Y., Hsu, W-C., Lee, C. S., Wu, Y. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2014, In : IEEE Electron Device Letters. 35, 9, p. 903-905 3 p., 6853327.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
Ultrasonics
Electric breakdown
Passivation
7 Citations (Scopus)

Al2O3 passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis

Liu, H. Y., Hsu, W-C., Chou, B. Y., Wang, Y. H., Sun, W. C., Wei, S. Y. & Yu, S. M., 2014 Jun 15, In : IEEE Photonics Technology Letters. 26, 12, p. 1243-1246 4 p., 6805178.

Research output: Contribution to journalArticle

Spray pyrolysis
Passivation
passivity
pyrolysis
Light emitting diodes
4 Citations (Scopus)

An alternative approach for improving performance of organic photovoltaics by light-enhanced annealing

Yao, E. P., Ho, C. S., Yu, C., Huang, E. L., Lai, Y. N. & Hsu, W-C., 2014 Jul 9, In : International Journal of Photoenergy. 2014, 120693.

Research output: Contribution to journalArticle

heterojunctions
Annealing
annealing
laser annealing
Heterojunctions
15 Citations (Scopus)

A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Liu, H. Y., Hsu, W-C., Chou, B. Y. & Wang, Y. H., 2014 Jan 15, In : IEEE Photonics Technology Letters. 26, 2, p. 138-141 4 p., 6663601.

Research output: Contribution to journalArticle

Photodetectors
Passivation
passivity
photometers
Dangling bonds
7 Citations (Scopus)

Comparative studies on AlGaN/GaN MOS-HEMTs with stacked La2O3/Al2O3 dielectric structures

Liu, H. Y., Lee, C. S., Liao, F. C., Hsu, W-C., Chou, B. Y., Tsai, J. H. & Lee, H. Y., 2014 Jan 1, In : ECS Journal of Solid State Science and Technology. 3, 8, p. N115-N119

Research output: Contribution to journalArticle

High electron mobility transistors
Thermodynamic stability
Gates (transistor)
Capacitance measurement
Voltage measurement
2 Citations (Scopus)

Comparative studies on InAlAs/InGaAs MOS-MHEMTs with different compressive/tensile-strained channel structures

Lee, C. S., Yeh, J. C., Hsu, W-C., Liu, H. Y. & Chou, B. Y., 2014 Jan 1, In : ECS Journal of Solid State Science and Technology. 3, 12, p. Q227-Q231

Research output: Contribution to journalArticle

High electron mobility transistors
Heterojunctions
Metals
Impact ionization
Transconductance
2 Citations (Scopus)

Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation

Lee, C. S., Liao, Y. H., Chou, B. Y., Liu, H. Y. & Hsu, W-C., 2014 Jan 1, In : Superlattices and Microstructures. 72, p. 194-203 10 p.

Research output: Contribution to journalArticle

Ozone
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
ozone

Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Lee, C. S., Huang, H. S., Shung, W. H., Wu, T. T., Yang, C. L., Yeh, C. C., Liao, Y. H., Chou, B. Y., Liu, H. Y. & Hsu, W-C., 2014 Nov 5, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. Jiang, X., Li, S., Cheng, Y. & Dai, Y. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 769-771 3 p. 6947770. (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Ozone
Sputtering
Oxidation
Composite materials
10 Citations (Scopus)

Design of gate-all-around silicon mosfets for 6-T Sram area efficiency and yield

Liao, Y. B., Chiang, M-H., Damrongplasit, N., Hsu, W-C. & Liu, T. J. K., 2014 Jan 1, In : IEEE Transactions on Electron Devices. 61, 7, p. 2371-2377 7 p., 6823112.

Research output: Contribution to journalArticle

Silicon
Transistors
Random access storage
Nanowires
Electric potential
4 Citations (Scopus)

Growing Al2O3 by ultrasonic spray pyrolysis for Al2O3/AlGaN/GaN metal-insulator-semiconductor ultraviolet photodetectors

Liu, H. Y., Hsu, W-C., Chou, B. Y., Wang, Y. H., Sun, W. C., Wei, S. Y., Yu, S. M. & Chiang, M-H., 2014 Dec 1, In : IEEE Transactions on Electron Devices. 61, 12, p. 4062-4069 8 p., 6965486.

Research output: Contribution to journalArticle

Spray pyrolysis
Photodetectors
Ultrasonics
Metals
Semiconductor materials
10 Citations (Scopus)

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Wang, C. H., Doornbos, G., Astromskas, G., Vellianitis, G., Oxland, R., Holland, M. C., Huang, M. L., Lin, C. H., Hsieh, C. H., Chang, Y. S., Lee, T. L., Chen, Y. Y., Ramvall, P., Lind, E., Hsu, W-C., Wernersson, L. E., Droopad, R., Passlack, M. & Diaz, C. H., 2014 Jan 1, In : AIP Advances. 4, 4, 047108.

Research output: Contribution to journalArticle

oxides
traps
capacitance
photoelectron spectroscopy
electric potential
5 Citations (Scopus)

Implementation of high-power GaN-based LEDs with a textured 3-D backside reflector formed by inserting a self-assembled SiO 2 nanosphere monolayer

Liou, J. K., Chou, P. C., Chen, C. C., Chang, Y. C., Hsu, W-C., Cheng, S. Y., Tsai, J. H. & Liu, W-C., 2014 Jan 1, In : IEEE Transactions on Electron Devices. 61, 3, p. 831-837 7 p., 6712052.

Research output: Contribution to journalArticle

Nanospheres
Light emitting diodes
Monolayers
High intensity light
Light emission
18 Citations (Scopus)

Investigation of temperature-dependent characteristics of AlGaN/GaN MOS-HEMT by using hydrogen peroxide oxidation technique

Liu, H. Y., Hsu, W-C., Lee, C. S., Chou, B. Y., Liao, Y. B. & Chiang, M-H., 2014 Jan 1, In : IEEE Transactions on Electron Devices. 61, 8, p. 2760-2766 7 p., 6828723.

Research output: Contribution to journalArticle

High electron mobility transistors
Hydrogen peroxide
Hydrogen Peroxide
Metals
Oxidation
4 Citations (Scopus)

Investigation of thermal instability of additive-based high-efficiency organic photovoltaics

Yao, E. P., Tsai, Y. J. & Hsu, W-C., 2014 Jan 1, In : International Journal of Photoenergy. 2014, 952528.

Research output: Contribution to journalArticle

thermal instability
heterojunctions
Heterojunctions
sunlight
carrier lifetime