Research Output per year
Research Output 1981 2019
2014
Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C 60 )
Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 Jan 1, p. 47-49. 3 p.Research output: Contribution to conference › Paper
Fullerenes
Boron
Molecular orbitals
Tin oxides
Indium
2004
2
Citations
(Scopus)
A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs
Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y-H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 101-104. 4 p.Research output: Contribution to conference › Paper
Monolithic microwave integrated circuits
Wireless local area networks (WLAN)
Power amplifiers
High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT
Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y-H., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 105-108. 4 p.Research output: Contribution to conference › Paper
Power amplifiers
Base stations
5
Citations
(Scopus)
InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate
Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 Dec 1, p. 2301-2304. 4 p.Research output: Contribution to conference › Paper
High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown
Liquid phase oxidation on GaAs-based materials and the applications
Wang, Y-H., 2004 Dec 1, p. 2291-2296. 6 p.Research output: Contribution to conference › Paper
Oxidation
Liquids
Oxides
2002
10
Citations
(Scopus)
A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier
Liu, H. Z., Wang, C. C., Wang, Y-H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 33-36. 4 p.Research output: Contribution to conference › Paper
Monolithic microwave integrated circuits
Power amplifiers
2
Citations
(Scopus)
High reliability in low noise InGaP gated PHEMTs
Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 81-84. 4 p.Research output: Contribution to conference › Paper
High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance
2001
1
Citation
(Scopus)
Super low noise InGaP gated PHEMT
Huang, H. K., Wang, Y-H., Wu, C. L., Wang, J. C. & Chang, C. S., 2001 Jan 1, p. 237-240. 4 p.Research output: Contribution to conference › Paper
Wet etching
Drain current
Noise figure
Transconductance
Threshold voltage
2000
Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y-H. & Houng, M., 2000 Dec 1, p. 149-154. 6 p.Research output: Contribution to conference › Paper
Masks
Oxidation
Oxides
Cutoff frequency
Transconductance
1998
1
Citation
(Scopus)
Analytic model for asymmetric trapezoidal-gate MOSFET
Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 Dec 1, p. 420-423. 4 p.Research output: Contribution to conference › Paper
Capacitance
Drain current
Poisson equation
Green's function
Polynomials
1994
A GaAs double negative differential resistance device with a p+ AlGaAs base
Yarn, K. F., Chang, C. Y., Wang, Y-H., Wei, H. C., Sze, P. W. & Jeng, J. M., 1994 Jan 1.Research output: Contribution to conference › Paper
Electric potential
Gases
Temperature
gallium arsenide
1
Citation
(Scopus)
Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures
Pan, R. S., Houng, M. & Wang, Y-H., 1994 Jan 1.Research output: Contribution to conference › Paper
Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields
The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures
Liu, M. H., Wang, Y-H., Houng, M., Chen, J. F. & Cho, A. Y., 1994 Jan 1.Research output: Contribution to conference › Paper
Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide
1991
Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor
Liu, W-C., Lour, W. S., Wang, Y-H., Sun, C. Y., Lee, Y. S. & Guo, D. F., 1991 Jan 1, p. 371-373. 3 p.Research output: Contribution to conference › Paper
Resonant tunneling
Bipolar transistors
Transistors
Electrons
Temperature
MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures
Wang, Y-H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991 Jan 1, p. 329-331. 3 p.Research output: Contribution to conference › Paper
Surface emitting lasers
Molecular beam epitaxy
Photodetectors
Distributed Bragg reflectors
Quantum well lasers
1990
MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor
Yarn, K. F., Chang, C. Y., Wang, Y-H. & Wang, R. L., 1990 Dec 1, p. 55-58. 4 p.Research output: Contribution to conference › Paper
Resonant tunneling
Hot electrons
Molecular beam epitaxy
Transistors
Current density
Negative differential resistance in a novel GaAs delta-doping tunneling diode
Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 Dec 1, p. 27-29. 3 p.Research output: Contribution to conference › Paper
Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics