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Research Output 1981 2019

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Paper
2014

Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C 60 )

Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 Jan 1, p. 47-49. 3 p.

Research output: Contribution to conferencePaper

Fullerenes
Boron
Molecular orbitals
Tin oxides
Indium
2004
2 Citations (Scopus)

A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs

Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y. H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 101-104. 4 p.

Research output: Contribution to conferencePaper

Monolithic microwave integrated circuits
Wireless local area networks (WLAN)
Power amplifiers

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y. H., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 105-108. 4 p.

Research output: Contribution to conferencePaper

Power amplifiers
Base stations
3 Citations (Scopus)

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 Dec 1, p. 2301-2304. 4 p.

Research output: Contribution to conferencePaper

High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown

Liquid phase oxidation on GaAs-based materials and the applications

Wang, Y-H., 2004 Dec 1, p. 2291-2296. 6 p.

Research output: Contribution to conferencePaper

Oxidation
Liquids
Oxides
2002
10 Citations (Scopus)

A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 33-36. 4 p.

Research output: Contribution to conferencePaper

Monolithic microwave integrated circuits
Power amplifiers
1 Citation (Scopus)

High reliability in low noise InGaP gated PHEMTs

Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 81-84. 4 p.

Research output: Contribution to conferencePaper

High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance
2001
1 Citation (Scopus)

Super low noise InGaP gated PHEMT

Huang, H. K., Wang, Y-H., Wu, C. L., Wang, J. C. & Chang, C. S., 2001 Jan 1, p. 237-240. 4 p.

Research output: Contribution to conferencePaper

Wet etching
Drain current
Noise figure
Transconductance
Threshold voltage
2000

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 Dec 1, p. 149-154. 6 p.

Research output: Contribution to conferencePaper

Masks
Oxidation
Oxides
Cutoff frequency
Transconductance
1998
1 Citation (Scopus)

Analytic model for asymmetric trapezoidal-gate MOSFET

Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 Dec 1, p. 420-423. 4 p.

Research output: Contribution to conferencePaper

Capacitance
Drain current
Poisson equation
Green's function
Polynomials
1994

A GaAs double negative differential resistance device with a p+ AlGaAs base

Yarn, K. F., Chang, C. Y., Wang, Y-H., Wei, H. C., Sze, P. W. & Jeng, J. M., 1994 Jan 1.

Research output: Contribution to conferencePaper

Electric potential
Gases
Temperature
gallium arsenide
1 Citation (Scopus)
Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields

The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

Liu, M. H., Wang, Y-H., Houng, M., Chen, J. F. & Cho, A. Y., 1994 Jan 1.

Research output: Contribution to conferencePaper

Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide
1991

Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

Liu, W-C., Lour, W. S., Wang, Y-H., Sun, C. Y., Lee, Y. S. & Guo, D. F., 1991 Jan 1, p. 371-373. 3 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Bipolar transistors
Transistors
Electrons
Temperature

MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

Wang, Y-H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991 Jan 1, p. 329-331. 3 p.

Research output: Contribution to conferencePaper

Surface emitting lasers
Molecular beam epitaxy
Photodetectors
Distributed Bragg reflectors
Quantum well lasers
1990

MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

Yarn, K. F., Chang, C. Y., Wang, Y-H. & Wang, R. L., 1990 Dec 1, p. 55-58. 4 p.

Research output: Contribution to conferencePaper

Resonant tunneling
Hot electrons
Molecular beam epitaxy
Transistors
Current density

Negative differential resistance in a novel GaAs delta-doping tunneling diode

Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 Dec 1, p. 27-29. 3 p.

Research output: Contribution to conferencePaper

Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics