Research Output per year
Research Output 1981 2020
2014
Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C 60 )
Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 Jan 1, p. 47-49. 3 p.Research output: Contribution to conference › Paper
Fullerenes
Boron
Molecular orbitals
Tin oxides
Indium
2004
2
Citations
(Scopus)
A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs
Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y. H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 101-104. 4 p.Research output: Contribution to conference › Paper
Monolithic microwave integrated circuits
Wireless local area networks (WLAN)
Power amplifiers
High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT
Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y. H., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2004 Dec 1, p. 105-108. 4 p.Research output: Contribution to conference › Paper
Power amplifiers
Base stations
3
Citations
(Scopus)
InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate
Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 Dec 1, p. 2301-2304. 4 p.Research output: Contribution to conference › Paper
High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown
Liquid phase oxidation on GaAs-based materials and the applications
Wang, Y. H., 2004 Dec 1, p. 2291-2296. 6 p.Research output: Contribution to conference › Paper
Oxidation
Liquids
Oxides
2002
10
Citations
(Scopus)
A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier
Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 33-36. 4 p.Research output: Contribution to conference › Paper
Monolithic microwave integrated circuits
Power amplifiers
1
Citation
(Scopus)
High reliability in low noise InGaP gated PHEMTs
Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 Jan 1, p. 81-84. 4 p.Research output: Contribution to conference › Paper
High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance
2001
1
Citation
(Scopus)
Super low noise InGaP gated PHEMT
Huang, H. K., Wang, Y-H., Wu, C. L., Wang, J. C. & Chang, C. S., 2001 Jan 1, p. 237-240. 4 p.Research output: Contribution to conference › Paper
Wet etching
Drain current
Noise figure
Transconductance
Threshold voltage
2000
Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 Dec 1, p. 149-154. 6 p.Research output: Contribution to conference › Paper
Masks
Oxidation
Oxides
Cutoff frequency
Transconductance
1998
1
Citation
(Scopus)
Analytic model for asymmetric trapezoidal-gate MOSFET
Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 Dec 1, p. 420-423. 4 p.Research output: Contribution to conference › Paper
Capacitance
Drain current
Poisson equation
Green's function
Polynomials
1994
A GaAs double negative differential resistance device with a p+ AlGaAs base
Yarn, K. F., Chang, C. Y., Wang, Y-H., Wei, H. C., Sze, P. W. & Jeng, J. M., 1994 Jan 1.Research output: Contribution to conference › Paper
Electric potential
Gases
Temperature
gallium arsenide
1
Citation
(Scopus)
Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures
Pan, R. S., Houng, M. P. & Wang, Y. H., 1994 Jan 1.Research output: Contribution to conference › Paper
Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields
The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures
Liu, M. H., Wang, Y-H., Houng, M., Chen, J. F. & Cho, A. Y., 1994 Jan 1.Research output: Contribution to conference › Paper
Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide
1991
Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor
Liu, W-C., Lour, W. S., Wang, Y-H., Sun, C. Y., Lee, Y. S. & Guo, D. F., 1991 Jan 1, p. 371-373. 3 p.Research output: Contribution to conference › Paper
Resonant tunneling
Bipolar transistors
Transistors
Electrons
Temperature
MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures
Wang, Y. H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991 Jan 1, p. 329-331. 3 p.Research output: Contribution to conference › Paper
Surface emitting lasers
Molecular beam epitaxy
Photodetectors
Distributed Bragg reflectors
Quantum well lasers
1990
MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor
Yarn, K. F., Chang, C. Y., Wang, Y-H. & Wang, R. L., 1990 Dec 1, p. 55-58. 4 p.Research output: Contribution to conference › Paper
Resonant tunneling
Hot electrons
Molecular beam epitaxy
Transistors
Current density
Negative differential resistance in a novel GaAs delta-doping tunneling diode
Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 Dec 1, p. 27-29. 3 p.Research output: Contribution to conference › Paper
Diodes
Doping (additives)
Resonant tunneling
Impact ionization
Current voltage characteristics