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Research Output 1981 2019

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Conference article
2006

Enhancement of LED light-extraction efficiency by anodic oxidation

Wang, C. C., Lu, W. L., Yen, T. C., Liu, C. C., Chu, C. H., Wang, Y-H. & Houng, M., 2006 Dec 1, In : ECS Transactions. 2, 5, p. 217-221 5 p.

Research output: Contribution to journalConference article

Anodic oxidation
Light emitting diodes
Alumina
Nanopores
Texturing
2004

AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition

Huang, J. J., Sze, P. W., Lin, S. K., Lai, W. C., Wang, Y-H. & Houng, M., 2004 Dec 1, In : Physica Scripta T. T114, p. 94-96 3 p.

Research output: Contribution to journalConference article

AlGaN
Field-effect Transistor
Heterostructures
SiO2
metal oxide semiconductors
2003
8 Citations (Scopus)

A 3.3 v self-biased 2.4-2.5GHz high linearity PHEMT MMIC power amplifier

Chu, C. K., Huang, H. K., Wang, C. C., Wang, Y-H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2003 Dec 1, In : European Solid-State Circuits Conference. p. 667-670 4 p., 1257223.

Research output: Contribution to journalConference article

Monolithic microwave integrated circuits
Power amplifiers
Wireless local area networks (WLAN)
Electric potential
Local area networks
1987
7 Citations (Scopus)

NEW GaAs BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE DEVICE (BUNDR).

Yarn, K. F., Wang, Y-H., Chang, C. Y. & Jame, M. S., 1987 Dec 1, In : Technical Digest - International Electron Devices Meeting. p. 74-77 4 p.

Research output: Contribution to journalConference article

valleys
emitters
Electric potential
electric potential
Molecular beam epitaxy
1984

DEFECTS IN GaAs AND Al//xGa//1// minus //xAs GROWN BY MBE.

Chang, C. Y., Cheng, K. Y., Wang, Y-H., Liu, W-C. & Liao, S. A., 1984 Dec 1, In : Electrochemical Society Extended Abstracts. 84-2, p. 644-645 2 p.

Research output: Contribution to journalConference article

Molecular beam epitaxy
Microwave devices
Defects
Defect density
Epitaxial growth