β-Ga2O3 nanowires-based humidity sensors prepared on GaN/sapphire substrate

Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Shin Liu, Cheng Liang Hsu, Han Ting Hsueh, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report the growth of β-Ga2O3 nanowires (NWs) on GaN substrate and the fabrication of β-Ga2O3 NW humidity sensors. It was found that average length and diameter were ∼ 10 μm and 100 nm, respectively. It was also found that the current of the NWs increased as we increased the relative humidity because of the n-type nature of β-Ga2O3. Through measuring current-voltage characteristics of the fabricated device at 25°C, it was found that the measured currents were 5.99 × 10-5, 6.42 × 10 -5, 6.76 × 10-5, 7.33 × 10-5, and 7.93 × 10-5 A when measured with 35%, 50%, 65%, 85%, and 95%-relative humidity, respectively.

Original languageEnglish
Article number6568896
Pages (from-to)4891-4896
Number of pages6
JournalIEEE Sensors Journal
Volume13
Issue number12
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'β-Ga<sub>2</sub>O<sub>3</sub> nanowires-based humidity sensors prepared on GaN/sapphire substrate'. Together they form a unique fingerprint.

Cite this