TY - JOUR
T1 - β-Ga2O3 nanowires-based humidity sensors prepared on GaN/sapphire substrate
AU - Tsai, Tsung Ying
AU - Chang, Shoou Jinn
AU - Weng, Wen Yin
AU - Liu, Shin
AU - Hsu, Cheng Liang
AU - Hsueh, Han Ting
AU - Hsueh, Ting Jen
PY - 2013
Y1 - 2013
N2 - We report the growth of β-Ga2O3 nanowires (NWs) on GaN substrate and the fabrication of β-Ga2O3 NW humidity sensors. It was found that average length and diameter were ∼ 10 μm and 100 nm, respectively. It was also found that the current of the NWs increased as we increased the relative humidity because of the n-type nature of β-Ga2O3. Through measuring current-voltage characteristics of the fabricated device at 25°C, it was found that the measured currents were 5.99 × 10-5, 6.42 × 10 -5, 6.76 × 10-5, 7.33 × 10-5, and 7.93 × 10-5 A when measured with 35%, 50%, 65%, 85%, and 95%-relative humidity, respectively.
AB - We report the growth of β-Ga2O3 nanowires (NWs) on GaN substrate and the fabrication of β-Ga2O3 NW humidity sensors. It was found that average length and diameter were ∼ 10 μm and 100 nm, respectively. It was also found that the current of the NWs increased as we increased the relative humidity because of the n-type nature of β-Ga2O3. Through measuring current-voltage characteristics of the fabricated device at 25°C, it was found that the measured currents were 5.99 × 10-5, 6.42 × 10 -5, 6.76 × 10-5, 7.33 × 10-5, and 7.93 × 10-5 A when measured with 35%, 50%, 65%, 85%, and 95%-relative humidity, respectively.
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U2 - 10.1109/JSEN.2013.2274872
DO - 10.1109/JSEN.2013.2274872
M3 - Article
AN - SCOPUS:84885903747
SN - 1530-437X
VL - 13
SP - 4891
EP - 4896
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 12
M1 - 6568896
ER -