Abstract
We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.
Original language | English |
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Article number | 012206 |
Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
Volume | 39 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2021 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry