β-Ga2O3Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Bo You Liu, Jian V. Li

Research output: Contribution to journalArticlepeer-review

Abstract

We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.

Original languageEnglish
Article number012206
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume39
Issue number1
DOIs
Publication statusPublished - 2021 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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