β-Ga2O3Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Bo You Liu; Jian V. Li

doi:10.1116/6.0000776

β-Ga₂O₃Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Bo You Liu, Jian V. Li

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

Abstract

We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.

Original language	English
Article number	012206
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	39
Issue number	1
DOIs	https://doi.org/10.1116/6.0000776
Publication status	Published - 2021 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{7ab3033620ae42359e37319296695010,

title = "β-Ga2O3Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature",

abstract = "We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.",

author = "Liu, {Bo You} and Li, {Jian V.}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Contract No. MOST-107-2218-E-006-022-MY3 and used the facility of Taiwan Semiconductor Research Institute. J.V.L. acknowledges support from the Window on Science program of U.S. Air-Force Office Science and Research. Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = jan,

day = "1",

doi = "10.1116/6.0000776",

language = "English",

volume = "39",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - β-Ga2O3Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

AU - Liu, Bo You

AU - Li, Jian V.

N1 - Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan, under Contract No. MOST-107-2218-E-006-022-MY3 and used the facility of Taiwan Semiconductor Research Institute. J.V.L. acknowledges support from the Window on Science program of U.S. Air-Force Office Science and Research. Publisher Copyright: © 2021 Author(s).

PY - 2021/1/1

Y1 - 2021/1/1

N2 - We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.

AB - We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 ω, which allows low power applications. A large gauge factor of -201 ± 43 is measured from a Pt/(2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga2O3 single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga2O3 Schottky diodes up to 800 K. The β-Ga2O3 Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.

UR - http://www.scopus.com/inward/record.url?scp=85099877607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85099877607&partnerID=8YFLogxK

U2 - 10.1116/6.0000776

DO - 10.1116/6.0000776

M3 - Article

AN - SCOPUS:85099877607

VL - 39

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 012206