δ-doped In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition

  • C. Y. Chang
  • , W. Lin
  • , W. C. Hsu
  • , T. S. Wu
  • , S. Z. Chang
  • , C. Wang

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

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