δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

Y. S. Lin; D. H. Huang; Y. W. Chen; J. C. Huang; W. C. Hsu

doi:10.1016/j.tsf.2006.09.022

δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

Y. S. Lin, D. H. Huang, Y. W. Chen, J. C. Huang, W. C. Hsu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This article assesses the performance of a δ-doped In_0.5Ga_0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 Å and the design of the δ-doped emitter layer.

Original language	English
Pages (from-to)	3978-3981
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	7-8
DOIs	https://doi.org/10.1016/j.tsf.2006.09.022
Publication status	Published - 2007 Feb 26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.09.022

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title = "δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition",

abstract = "This article assesses the performance of a δ-doped In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 {\AA} and the design of the δ-doped emitter layer.",

author = "Lin, {Y. S.} and Huang, {D. H.} and Chen, {Y. W.} and Huang, {J. C.} and Hsu, {W. C.}",

year = "2007",

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T1 - δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

AU - Lin, Y. S.

AU - Huang, D. H.

AU - Chen, Y. W.

AU - Huang, J. C.

AU - Hsu, W. C.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - This article assesses the performance of a δ-doped In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 Å and the design of the δ-doped emitter layer.

AB - This article assesses the performance of a δ-doped In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 Å and the design of the δ-doped emitter layer.

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DO - 10.1016/j.tsf.2006.09.022

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SN - 0040-6090

VL - 515

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EP - 3981

JO - Thin Solid Films

JF - Thin Solid Films

IS - 7-8

ER -

δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

Abstract

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