This article assesses the performance of a δ-doped In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 Å and the design of the δ-doped emitter layer.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry