δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

Y. S. Lin, D. H. Huang, Y. W. Chen, J. C. Huang, W. C. Hsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This article assesses the performance of a δ-doped In0.5Ga0.5P/GaAs heterostructure-emitter bipolar transistor (δ-HEBT) grown by low-pressure metalorganic chemical vapor deposition. Moreover, an HEBT without δ-doping design in the emitter and with spacer layers of various thicknesses is presented for comparison. The common-emitter current gain and offset voltage are 50 and 130 mV, respectively, for the HEBT without δ-doping layer. The offset voltage of the δ-doped HEBT is as low as 70 mV and its common-emitter current gain is increased to 55, because of the use of the optimum spacer thickness of 100 Å and the design of the δ-doped emitter layer.

Original languageEnglish
Pages (from-to)3978-3981
Number of pages4
JournalThin Solid Films
Volume515
Issue number7-8
DOIs
Publication statusPublished - 2007 Feb 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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