δ-doping InGaP/GaAs heterojunction bipolar transistor

Jing Yuh Chen, Shiou Ying Cheng, Wen Lung Chang, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An InGaP/GaAs heterojunction bipolar transistor with a 50 Å undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. These results shows that high current gain and low offset voltage can be attained simultaneously without the passivation of the emitter-base junction. The experimental results show that the potential spike is reduced by the employment of a δ-doped layer simultaneously. On the contrary, theoretical consideration also shows that the potential spike vanishes by inserting a δ-doping sheet between the emitter-base heterointerface.

Original languageEnglish
Pages (from-to)88-91
Number of pages4
JournalMaterials Chemistry and Physics
Volume53
Issue number1
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
emitters
spike potentials
Doping (additives)
Electric potential
Passivation
low voltage
spacers
passivity
high current
gallium arsenide
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Chen, Jing Yuh ; Cheng, Shiou Ying ; Chang, Wen Lung ; Liu, Wen-Chau. / δ-doping InGaP/GaAs heterojunction bipolar transistor. In: Materials Chemistry and Physics. 1998 ; Vol. 53, No. 1. pp. 88-91.
@article{64d274ba954f4c89ad60457dd3000862,
title = "δ-doping InGaP/GaAs heterojunction bipolar transistor",
abstract = "An InGaP/GaAs heterojunction bipolar transistor with a 50 {\AA} undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. These results shows that high current gain and low offset voltage can be attained simultaneously without the passivation of the emitter-base junction. The experimental results show that the potential spike is reduced by the employment of a δ-doped layer simultaneously. On the contrary, theoretical consideration also shows that the potential spike vanishes by inserting a δ-doping sheet between the emitter-base heterointerface.",
author = "Chen, {Jing Yuh} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Wen-Chau Liu",
year = "1998",
month = "1",
day = "1",
doi = "10.1016/S0254-0584(97)02066-X",
language = "English",
volume = "53",
pages = "88--91",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "1",

}

δ-doping InGaP/GaAs heterojunction bipolar transistor. / Chen, Jing Yuh; Cheng, Shiou Ying; Chang, Wen Lung; Liu, Wen-Chau.

In: Materials Chemistry and Physics, Vol. 53, No. 1, 01.01.1998, p. 88-91.

Research output: Contribution to journalArticle

TY - JOUR

T1 - δ-doping InGaP/GaAs heterojunction bipolar transistor

AU - Chen, Jing Yuh

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Liu, Wen-Chau

PY - 1998/1/1

Y1 - 1998/1/1

N2 - An InGaP/GaAs heterojunction bipolar transistor with a 50 Å undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. These results shows that high current gain and low offset voltage can be attained simultaneously without the passivation of the emitter-base junction. The experimental results show that the potential spike is reduced by the employment of a δ-doped layer simultaneously. On the contrary, theoretical consideration also shows that the potential spike vanishes by inserting a δ-doping sheet between the emitter-base heterointerface.

AB - An InGaP/GaAs heterojunction bipolar transistor with a 50 Å undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. These results shows that high current gain and low offset voltage can be attained simultaneously without the passivation of the emitter-base junction. The experimental results show that the potential spike is reduced by the employment of a δ-doped layer simultaneously. On the contrary, theoretical consideration also shows that the potential spike vanishes by inserting a δ-doping sheet between the emitter-base heterointerface.

UR - http://www.scopus.com/inward/record.url?scp=0032050995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032050995&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(97)02066-X

DO - 10.1016/S0254-0584(97)02066-X

M3 - Article

VL - 53

SP - 88

EP - 91

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 1

ER -