δ-doping InGaP/GaAs heterojunction bipolar transistor

Jing Yuh Chen, Shiou Ying Cheng, Wen Lung Chang, Wen Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An InGaP/GaAs heterojunction bipolar transistor with a 50 Å undoped spacer and δ-doping sheet at base-emitter heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55 mV are obtained, respectively. These results shows that high current gain and low offset voltage can be attained simultaneously without the passivation of the emitter-base junction. The experimental results show that the potential spike is reduced by the employment of a δ-doped layer simultaneously. On the contrary, theoretical consideration also shows that the potential spike vanishes by inserting a δ-doping sheet between the emitter-base heterointerface.

Original languageEnglish
Pages (from-to)88-91
Number of pages4
JournalMaterials Chemistry and Physics
Volume53
Issue number1
DOIs
Publication statusPublished - 1998 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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