0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology

Jone-Fang Chen, Jiang Tao, Peng Fang, Chenming Hu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The reliability and performance of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. The results show that asymmetric LDD devices exhibit higher I dsat and larger I sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V dd. For the same hot-carrier lifetime, we show that ring oscillators with asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power.

Original languageEnglish
Pages (from-to)216-218
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number7
DOIs
Publication statusPublished - 1998 Jul 1

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Hot carriers
Carrier lifetime

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "The reliability and performance of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. The results show that asymmetric LDD devices exhibit higher I dsat and larger I sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V dd. For the same hot-carrier lifetime, we show that ring oscillators with asymmetric LDD devices can achieve 5{\%} (10{\%} if PMOSFET also had asymmetric LDD) higher speed and 10{\%} lower power.",
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0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology. / Chen, Jone-Fang; Tao, Jiang; Fang, Peng; Hu, Chenming.

In: IEEE Electron Device Letters, Vol. 19, No. 7, 01.07.1998, p. 216-218.

Research output: Contribution to journalArticle

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