1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

T. H. Wu, Y. K. Su, R. W. Chuang, C. Y. Huang, H. J. Wu, Y. C. Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.

Original languageEnglish
Pages (from-to)236-239
Number of pages4
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Vapor phase epitaxy
vapor phase epitaxy
Semiconductor quantum wells
Metals
quantum wells
metals
Solar cells
Energy gap
Nitrogen
solar cells
nitrogen
hybrid structures
short circuit currents
Short circuit currents
Band structure
energy bands
Absorption spectra
gallium arsenide
absorption spectra
Wavelength

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Wu, T. H. ; Su, Y. K. ; Chuang, R. W. ; Huang, C. Y. ; Wu, H. J. ; Lin, Y. C. / 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE. In: Journal of Crystal Growth. 2013 ; Vol. 370. pp. 236-239.
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abstract = "In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.",
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1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE. / Wu, T. H.; Su, Y. K.; Chuang, R. W.; Huang, C. Y.; Wu, H. J.; Lin, Y. C.

In: Journal of Crystal Growth, Vol. 370, 01.05.2013, p. 236-239.

Research output: Contribution to journalArticle

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AU - Wu, T. H.

AU - Su, Y. K.

AU - Chuang, R. W.

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AU - Wu, H. J.

AU - Lin, Y. C.

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N2 - In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.

AB - In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.

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