37 Citations (Scopus)

Abstract

We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 C. At 800 C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

Original languageEnglish
Article number82105
JournalApplied Physics Letters
Volume104
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

graphene
copper
nanostructure (characteristics)
diffraction patterns
Raman spectra
transmission electron microscopy
carbon
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{c7960da5b2d3495fa1c44fa169d72e6d,
title = "1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier",
abstract = "We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 C. At 800 C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.",
author = "Nguyen, {Ba Son} and Lin, {Jen Fin} and Perng, {Dung Ching}",
year = "2014",
month = "1",
day = "1",
doi = "10.1063/1.4866857",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier. / Nguyen, Ba Son; Lin, Jen Fin; Perng, Dung Ching.

In: Applied Physics Letters, Vol. 104, No. 8, 82105, 01.01.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

AU - Nguyen, Ba Son

AU - Lin, Jen Fin

AU - Perng, Dung Ching

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 C. At 800 C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

AB - We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 C. At 800 C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

UR - http://www.scopus.com/inward/record.url?scp=84896803311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896803311&partnerID=8YFLogxK

U2 - 10.1063/1.4866857

DO - 10.1063/1.4866857

M3 - Article

AN - SCOPUS:84896803311

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 82105

ER -