1-V CMOS similarity measurement chip for binary pattern identification

Yu Cherng Hung, Bin Da Liu

Research output: Contribution to conference › Paper

1 Citation (Scopus)

Abstract

Design of a new low-voltage similarity measurement circuit is proposed in this paper. The similarity measurement between two binary patterns is represented by Hamming metric, that is, average absolute differential function. Using clock bootstrapped and level shift techniques, the supply voltage of the circuit is reduced to 1 V, which can efficiently operate within a battery supply. Some simple elements such as capacitor array, switch, and exclusive NOR gates are adopted to achieve Hamming metric function. An experimental chip is implemented by using a 0.25 μm CMOS technology. The simulation results show the circuit responds a 21-mV difference for each one-pixel difference between two binary patterns. The patterns have dimension 6×4 pixels.

Original languageEnglish
Pages36-39
Number of pages4
Publication statusPublished - 2005 Oct 31
Event9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA - Hsinchu, Taiwan
Duration: 2005 May 28 → 2005 May 30

Other

Other9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA
CountryTaiwan
CityHsinchu
Period05-05-28 → 05-05-30

Fingerprint

Networks (circuits)
Pixels
Voltage measurement
Clocks
Capacitors
Switches
Electric potential

All Science Journal Classification (ASJC) codes

  • Software

Cite this

Hung, Y. C., & Liu, B. D. (2005). 1-V CMOS similarity measurement chip for binary pattern identification. 36-39. Paper presented at 9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA, Hsinchu, Taiwan.
Hung, Yu Cherng ; Liu, Bin Da. / 1-V CMOS similarity measurement chip for binary pattern identification. Paper presented at 9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA, Hsinchu, Taiwan.4 p.
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abstract = "Design of a new low-voltage similarity measurement circuit is proposed in this paper. The similarity measurement between two binary patterns is represented by Hamming metric, that is, average absolute differential function. Using clock bootstrapped and level shift techniques, the supply voltage of the circuit is reduced to 1 V, which can efficiently operate within a battery supply. Some simple elements such as capacitor array, switch, and exclusive NOR gates are adopted to achieve Hamming metric function. An experimental chip is implemented by using a 0.25 μm CMOS technology. The simulation results show the circuit responds a 21-mV difference for each one-pixel difference between two binary patterns. The patterns have dimension 6×4 pixels.",
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Hung, YC & Liu, BD 2005, '1-V CMOS similarity measurement chip for binary pattern identification' Paper presented at 9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA, Hsinchu, Taiwan, 05-05-28 - 05-05-30, pp. 36-39.

1-V CMOS similarity measurement chip for binary pattern identification. / Hung, Yu Cherng; Liu, Bin Da.

2005. 36-39 Paper presented at 9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA, Hsinchu, Taiwan.

Research output: Contribution to conference › Paper

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N2 - Design of a new low-voltage similarity measurement circuit is proposed in this paper. The similarity measurement between two binary patterns is represented by Hamming metric, that is, average absolute differential function. Using clock bootstrapped and level shift techniques, the supply voltage of the circuit is reduced to 1 V, which can efficiently operate within a battery supply. Some simple elements such as capacitor array, switch, and exclusive NOR gates are adopted to achieve Hamming metric function. An experimental chip is implemented by using a 0.25 μm CMOS technology. The simulation results show the circuit responds a 21-mV difference for each one-pixel difference between two binary patterns. The patterns have dimension 6×4 pixels.

AB - Design of a new low-voltage similarity measurement circuit is proposed in this paper. The similarity measurement between two binary patterns is represented by Hamming metric, that is, average absolute differential function. Using clock bootstrapped and level shift techniques, the supply voltage of the circuit is reduced to 1 V, which can efficiently operate within a battery supply. Some simple elements such as capacitor array, switch, and exclusive NOR gates are adopted to achieve Hamming metric function. An experimental chip is implemented by using a 0.25 μm CMOS technology. The simulation results show the circuit responds a 21-mV difference for each one-pixel difference between two binary patterns. The patterns have dimension 6×4 pixels.

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Hung YC, Liu BD. 1-V CMOS similarity measurement chip for binary pattern identification. 2005. Paper presented at 9th IEEE International Workshop on Cellular Neural Networks and their Applications, CNNA, Hsinchu, Taiwan.

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