10-Gb/s planar InGaAs P-I-N photodetectors

Y. S. Wang, Shoou Jinn Chang, C. L. Tsai, Meng Chyi Wu, Yu Zung Chiou, S. P. Chang, W. Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The authors report the fabrication of high-performance planar InGaAs P-I-N buried heterostructure photodetectors (BH-PDs) by introducing mesa etching and refilling with semi-insulating InP. It was found that measured 3-dB bandwidth for the fabricated BH-PD was 12.4 GHz. For a given bandwidth of 1 kHz and a given bias of - 5 V, it was found that noise equivalent powers our InGaAs P-I-N BH-PD were 6.05 × 10-14 W at 1310 nm and 4.36 × 10 -14 W at 1550 nm, which correspond to normalize detectivity (D *) values of 2.3 × 1012 cmHz 0.5W-1 and 3.2 × 1012cmHz 0.5 W-1, respectively. It was also found that eye diagram data measured from the proposed BH-PD met with the requirements of the OC-192 standard.

Original languageEnglish
Article number5483091
Pages (from-to)1559-1563
Number of pages5
JournalIEEE Sensors Journal
Volume10
Issue number10
DOIs
Publication statusPublished - 2010 Aug 13

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Wang, Y. S., Chang, S. J., Tsai, C. L., Wu, M. C., Chiou, Y. Z., Chang, S. P., & Lin, W. (2010). 10-Gb/s planar InGaAs P-I-N photodetectors. IEEE Sensors Journal, 10(10), 1559-1563. [5483091]. https://doi.org/10.1109/JSEN.2010.2046888