100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

T. L. Lin; S. C. Chen; Y. C. Kao; K. L. Wang; S. Iyer

doi:10.1063/1.96789

100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

T. L. Lin, S. C. Chen, Y. C. Kao, K. L. Wang, S. Iyer

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm² V^-1 s ^-1 with a doping concentration of 6×10 ¹⁵ cm^-3 has been achieved.

Original language	English
Pages (from-to)	1793-1795
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	26
DOIs	https://doi.org/10.1063/1.96789
Publication status	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.96789

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title = "100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon",

abstract = "100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s -1 with a doping concentration of 6×10 15 cm-3 has been achieved.",

author = "Lin, {T. L.} and Chen, {S. C.} and Kao, {Y. C.} and Wang, {K. L.} and S. Iyer",

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T1 - 100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

AU - Lin, T. L.

AU - Chen, S. C.

AU - Kao, Y. C.

AU - Wang, K. L.

AU - Iyer, S.

PY - 1986

Y1 - 1986

N2 - 100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s -1 with a doping concentration of 6×10 15 cm-3 has been achieved.

AB - 100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s -1 with a doping concentration of 6×10 15 cm-3 has been achieved.

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100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

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