Abstract
We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.
| Original language | English |
|---|---|
| Pages (from-to) | 343-346 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 2004 |
| Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry