{113} Defect-engineered silicon light-emitting diodes

G. Z. Pan, R. P. Ostroumov, Y. G. Lian, K. N. Tu, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)


We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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