Abstract
We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
Original language | English |
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Pages (from-to) | 418-420 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 Jan 15 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering