1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

H. C. Yu, Y. K. Su, S. J. Chang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

Original languageEnglish
Pages (from-to)418-420
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number2
DOIs
Publication statusPublished - 2006 Jan 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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