Abstract
We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
| Original language | English |
|---|---|
| Pages (from-to) | 418-420 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2006 Jan 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE. / Yu, H. C.; Su, Y. K.; Chang, Shoou-Jinn; Lin, K. F.; Wang, J. M.; Chi, J. Y.; Hsiao, R. S.
In: IEEE Photonics Technology Letters, Vol. 18, No. 2, 15.01.2006, p. 418-420.Research output: Contribution to journal › Article
TY - JOUR
T1 - 1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE
AU - Yu, H. C.
AU - Su, Y. K.
AU - Chang, Shoou-Jinn
AU - Lin, K. F.
AU - Wang, J. M.
AU - Chi, J. Y.
AU - Hsiao, R. S.
PY - 2006/1/15
Y1 - 2006/1/15
N2 - We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
AB - We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
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U2 - 10.1109/LPT.2005.863166
DO - 10.1109/LPT.2005.863166
M3 - Article
AN - SCOPUS:85008031227
VL - 18
SP - 418
EP - 420
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 2
ER -