1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume110
Issue number3
DOIs
Publication statusPublished - 2004 Jul 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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