1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su; H. C. Yu; S. J. Chang; C. T. Lee; J. S. Wang; A. R. Kovsh; Y. T. Wu; K. F. Lin; C. Y. Huang

doi:10.1016/j.mseb.2004.02.005

1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlO_x current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

Original language	English
Pages (from-to)	256-259
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2004.02.005
Publication status	Published - 2004 Jul 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.02.005

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@article{d6c36188744345738a7adc8a19793298,

title = "1.3 μm InAs quantum dot resonant cavity light emitting diodes",

abstract = "Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.",

author = "Su, {Y. K.} and Yu, {H. C.} and Chang, {S. J.} and Lee, {C. T.} and Wang, {J. S.} and Kovsh, {A. R.} and Wu, {Y. T.} and Lin, {K. F.} and Huang, {C. Y.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.",

year = "2004",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2004.02.005",

language = "English",

volume = "110",

pages = "256--259",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - 1.3 μm InAs quantum dot resonant cavity light emitting diodes

AU - Su, Y. K.

AU - Yu, H. C.

AU - Chang, S. J.

AU - Lee, C. T.

AU - Wang, J. S.

AU - Kovsh, A. R.

AU - Wu, Y. T.

AU - Lin, K. F.

AU - Huang, C. Y.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.

PY - 2004/7/25

Y1 - 2004/7/25

N2 - Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

AB - Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

UR - http://www.scopus.com/inward/record.url?scp=2942585623&partnerID=8YFLogxK

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U2 - 10.1016/j.mseb.2004.02.005

DO - 10.1016/j.mseb.2004.02.005

M3 - Article

AN - SCOPUS:2942585623

SN - 0921-5107

VL - 110

SP - 256

EP - 259

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

1.3 μm InAs quantum dot resonant cavity light emitting diodes

Abstract

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