1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-Can package for optical fiber communications

Chia Lung Tsai, Yi Lun Chou, Y. S. Wang, Shoou-Jinn Chang, Meng Chyi Wu, W. Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, we report on the realization of the 1.3 μm strain-compensated InGaAsP buried heterostructure (BH) laser diodes (LDs) by using an Fe-doped semi-insulating InP layer. The performances of LDs are characterized by light output power, internal quantum efficiency, modal gain, characteristic temperature (T0), and dynamic response. As a result of the good confinement of the injection carriers within the strained-compensated multiple quantum well (SC-MQW) and the better heat sink for thermal dissipation, the BH LDs exhibit a threshold current of 9 mA, a slope efficiency of 0.296 mW/mA, and a maximum light output power of 11.8 mW/facet at 76 mA. Besides, the transparent current density and modal gain are estimated as 106 A/ cm 2 and 12.5 cm-1, respectively, for the fabricated LDs. Otherwise, the BH LD with a facet coating is beneficial to get a lower threshold current, a higher light output power, and an improved T0 value as compared to the conventional ridge-waveguide LD. Furthermore, this transistor outlook (TO)-packaged BH LD for small-signal analyses does not show any parasitic effects at low frequencies and has a maximum modulation frequency of 9.6 GHz at 80 mA. Finally, the BH LD also exhibits the promising potential for high speed data transmission as evaluated from the 10 Gb/s eye-opening feature. These results imply that the 1.3 μm TO-packaged SC-MQW InGaAsP LDs are excellent candidates for use in high speed optical fiber communications.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number12
DOIs
Publication statusPublished - 2009 Nov 10

Fingerprint

Optical fiber communication
Semiconductor lasers
Heterojunctions
Transistors
Semiconductor quantum wells
Ridge waveguides
Quantum well lasers
Heat sinks
Frequency modulation
Quantum efficiency
Data communication systems
Dynamic response
Current density
Coatings

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{2390618a8493474ea4bc96adfffda90e,
title = "1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-Can package for optical fiber communications",
abstract = "In this paper, we report on the realization of the 1.3 μm strain-compensated InGaAsP buried heterostructure (BH) laser diodes (LDs) by using an Fe-doped semi-insulating InP layer. The performances of LDs are characterized by light output power, internal quantum efficiency, modal gain, characteristic temperature (T0), and dynamic response. As a result of the good confinement of the injection carriers within the strained-compensated multiple quantum well (SC-MQW) and the better heat sink for thermal dissipation, the BH LDs exhibit a threshold current of 9 mA, a slope efficiency of 0.296 mW/mA, and a maximum light output power of 11.8 mW/facet at 76 mA. Besides, the transparent current density and modal gain are estimated as 106 A/ cm 2 and 12.5 cm-1, respectively, for the fabricated LDs. Otherwise, the BH LD with a facet coating is beneficial to get a lower threshold current, a higher light output power, and an improved T0 value as compared to the conventional ridge-waveguide LD. Furthermore, this transistor outlook (TO)-packaged BH LD for small-signal analyses does not show any parasitic effects at low frequencies and has a maximum modulation frequency of 9.6 GHz at 80 mA. Finally, the BH LD also exhibits the promising potential for high speed data transmission as evaluated from the 10 Gb/s eye-opening feature. These results imply that the 1.3 μm TO-packaged SC-MQW InGaAsP LDs are excellent candidates for use in high speed optical fiber communications.",
author = "Tsai, {Chia Lung} and Chou, {Yi Lun} and Wang, {Y. S.} and Shoou-Jinn Chang and Wu, {Meng Chyi} and W. Lin",
year = "2009",
month = "11",
day = "10",
doi = "10.1149/1.3236424",
language = "English",
volume = "156",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-Can package for optical fiber communications. / Tsai, Chia Lung; Chou, Yi Lun; Wang, Y. S.; Chang, Shoou-Jinn; Wu, Meng Chyi; Lin, W.

In: Journal of the Electrochemical Society, Vol. 156, No. 12, 10.11.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1.3 μm strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-Can package for optical fiber communications

AU - Tsai, Chia Lung

AU - Chou, Yi Lun

AU - Wang, Y. S.

AU - Chang, Shoou-Jinn

AU - Wu, Meng Chyi

AU - Lin, W.

PY - 2009/11/10

Y1 - 2009/11/10

N2 - In this paper, we report on the realization of the 1.3 μm strain-compensated InGaAsP buried heterostructure (BH) laser diodes (LDs) by using an Fe-doped semi-insulating InP layer. The performances of LDs are characterized by light output power, internal quantum efficiency, modal gain, characteristic temperature (T0), and dynamic response. As a result of the good confinement of the injection carriers within the strained-compensated multiple quantum well (SC-MQW) and the better heat sink for thermal dissipation, the BH LDs exhibit a threshold current of 9 mA, a slope efficiency of 0.296 mW/mA, and a maximum light output power of 11.8 mW/facet at 76 mA. Besides, the transparent current density and modal gain are estimated as 106 A/ cm 2 and 12.5 cm-1, respectively, for the fabricated LDs. Otherwise, the BH LD with a facet coating is beneficial to get a lower threshold current, a higher light output power, and an improved T0 value as compared to the conventional ridge-waveguide LD. Furthermore, this transistor outlook (TO)-packaged BH LD for small-signal analyses does not show any parasitic effects at low frequencies and has a maximum modulation frequency of 9.6 GHz at 80 mA. Finally, the BH LD also exhibits the promising potential for high speed data transmission as evaluated from the 10 Gb/s eye-opening feature. These results imply that the 1.3 μm TO-packaged SC-MQW InGaAsP LDs are excellent candidates for use in high speed optical fiber communications.

AB - In this paper, we report on the realization of the 1.3 μm strain-compensated InGaAsP buried heterostructure (BH) laser diodes (LDs) by using an Fe-doped semi-insulating InP layer. The performances of LDs are characterized by light output power, internal quantum efficiency, modal gain, characteristic temperature (T0), and dynamic response. As a result of the good confinement of the injection carriers within the strained-compensated multiple quantum well (SC-MQW) and the better heat sink for thermal dissipation, the BH LDs exhibit a threshold current of 9 mA, a slope efficiency of 0.296 mW/mA, and a maximum light output power of 11.8 mW/facet at 76 mA. Besides, the transparent current density and modal gain are estimated as 106 A/ cm 2 and 12.5 cm-1, respectively, for the fabricated LDs. Otherwise, the BH LD with a facet coating is beneficial to get a lower threshold current, a higher light output power, and an improved T0 value as compared to the conventional ridge-waveguide LD. Furthermore, this transistor outlook (TO)-packaged BH LD for small-signal analyses does not show any parasitic effects at low frequencies and has a maximum modulation frequency of 9.6 GHz at 80 mA. Finally, the BH LD also exhibits the promising potential for high speed data transmission as evaluated from the 10 Gb/s eye-opening feature. These results imply that the 1.3 μm TO-packaged SC-MQW InGaAsP LDs are excellent candidates for use in high speed optical fiber communications.

UR - http://www.scopus.com/inward/record.url?scp=70350732730&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350732730&partnerID=8YFLogxK

U2 - 10.1149/1.3236424

DO - 10.1149/1.3236424

M3 - Article

AN - SCOPUS:70350732730

VL - 156

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 12

ER -