A 6-10-GHz broadband low noise amplifier (LNA) and transmitting amplifier (TA) for direct sequence ultra-wideband (DS-UWB) are presented. The LNA and TA are fabricated with the 0.18-μm 1P6M standard CMOS process. The CMOS LNA and TA are checked by onwafer measurement with the DC supply voltage of 1.5V. From 6-10 GHz, the broadband LNA exhibits a noise figure of 5.3-6.2 dB, a gain of 11- 13.8 dB, a P1 dB of -15.7- -10.8 dBm, a IIP3 of -5.5- -1 dBm, a DC power consumption of 12mW, and an input/output return loss higher than 11/12 dB, respectively. From 6-10 GHz, the broadband TA exhibits a gain of 7.6-10.5 dB, a OP1 dB of 2.8-6.1 dBm, a OIP3 of 12.3-15.1 dBm, and a PAE of 8.8-17.6% @ OP1 dB, and a of 9.7-21.1% @ OP1 dB, and an input/output return loss higher than 6.8/3.2 dB, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering