Abstract
Er-doped SiGe LEDS were fabricated and the electroluminescent (EL) characteristics were studied. By injecting minority carriers into the diodes, Er3+-related electroluminescence was observed at 77 K in the 1.54 μm region which corresponds to the Er3+ 4I13/2 → 4I15/2 4f shell transitions. The optimum annealing condition to achieve the maximum EL intensity is to anneal the implanted sample at 800°C for 30 min under vacuum.
Original language | English |
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Pages (from-to) | 1426-1428 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 83 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1998 Feb 1 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy