1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

Shoou-Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Er-doped SiGe LEDS were fabricated and the electroluminescent (EL) characteristics were studied. By injecting minority carriers into the diodes, Er3+-related electroluminescence was observed at 77 K in the 1.54 μm region which corresponds to the Er3+ 4I13/24I15/2 4f shell transitions. The optimum annealing condition to achieve the maximum EL intensity is to anneal the implanted sample at 800°C for 30 min under vacuum.

Original languageEnglish
Pages (from-to)1426-1428
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number3
DOIs
Publication statusPublished - 1998 Feb 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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