1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes

Shoou-Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Er-doped SiGe LEDS were fabricated and the electroluminescent (EL) characteristics were studied. By injecting minority carriers into the diodes, Er3+-related electroluminescence was observed at 77 K in the 1.54 μm region which corresponds to the Er3+ 4I13/24I15/2 4f shell transitions. The optimum annealing condition to achieve the maximum EL intensity is to anneal the implanted sample at 800°C for 30 min under vacuum.

Original languageEnglish
Pages (from-to)1426-1428
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number3
DOIs
Publication statusPublished - 1998 Feb 1

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minority carriers
electroluminescence
erbium
light emitting diodes
diodes
vacuum
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chang, Shoou-Jinn ; Nayak, Deepak K. ; Shiraki, Yasuhiro. / 1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes. In: Journal of Applied Physics. 1998 ; Vol. 83, No. 3. pp. 1426-1428.
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1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes. / Chang, Shoou-Jinn; Nayak, Deepak K.; Shiraki, Yasuhiro.

In: Journal of Applied Physics, Vol. 83, No. 3, 01.02.1998, p. 1426-1428.

Research output: Contribution to journalArticle

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