1T1R nonvolatile memory with Al/TiO2/Au and Sol-Gel-processed insulator for barium zirconate nickelate gate in pentacene thin film transistor

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm2/Vs, low threshold voltage of -1.1 V, and low leakage current of 10-12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

Original languageEnglish
Article number1408
JournalMaterials
Volume10
Issue number12
DOIs
Publication statusPublished - 2017 Dec 9

Fingerprint

Barium zirconate
Gates (transistor)
Thin film transistors
Sol-gels
Leakage currents
Data storage equipment
Low power electronics
Threshold voltage
Resistors
Transistors
Electric properties
pentacene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{a213fe6a48b2446fb8180b050235cadc,
title = "1T1R nonvolatile memory with Al/TiO2/Au and Sol-Gel-processed insulator for barium zirconate nickelate gate in pentacene thin film transistor",
abstract = "A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm2/Vs, low threshold voltage of -1.1 V, and low leakage current of 10-12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.",
author = "Lee, {Ke Jing} and Chang, {Yu Chi} and Lee, {Cheng Jung} and Wang, {Li Wen} and Wang, {Yeong Her}",
year = "2017",
month = "12",
day = "9",
doi = "10.3390/ma10121408",
language = "English",
volume = "10",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "12",

}

1T1R nonvolatile memory with Al/TiO2/Au and Sol-Gel-processed insulator for barium zirconate nickelate gate in pentacene thin film transistor. / Lee, Ke Jing; Chang, Yu Chi; Lee, Cheng Jung; Wang, Li Wen; Wang, Yeong Her.

In: Materials, Vol. 10, No. 12, 1408, 09.12.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1T1R nonvolatile memory with Al/TiO2/Au and Sol-Gel-processed insulator for barium zirconate nickelate gate in pentacene thin film transistor

AU - Lee, Ke Jing

AU - Chang, Yu Chi

AU - Lee, Cheng Jung

AU - Wang, Li Wen

AU - Wang, Yeong Her

PY - 2017/12/9

Y1 - 2017/12/9

N2 - A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm2/Vs, low threshold voltage of -1.1 V, and low leakage current of 10-12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

AB - A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm2/Vs, low threshold voltage of -1.1 V, and low leakage current of 10-12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

UR - http://www.scopus.com/inward/record.url?scp=85037537882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85037537882&partnerID=8YFLogxK

U2 - 10.3390/ma10121408

DO - 10.3390/ma10121408

M3 - Article

AN - SCOPUS:85037537882

VL - 10

JO - Materials

JF - Materials

SN - 1996-1944

IS - 12

M1 - 1408

ER -